RFD12N06 UMW | Alldatasheet

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  • Ultra Low On-Resistance - RDS (ON) < 63mΩ（ VGS = 10V） - RDS (ON) <71mΩ（ VGS = 5V）  Peak Current vs Pulse Width Curve  UIS Rating Curve  Switching Time vs RGS Curves Absolute Maximum RatingsTC = 25℃ , Unless Otherwise Specified D G S Drain to Source Voltage (Note 1) VDSS 60 V Drain to Gate Voltage (RGS = 20kΩ ) (Note 1) V DGR 60 V Gate to Source Voltage VGS ±16 V Drain Current Continuous (TC = 25oC, VGS = 5V) D Continuous (TC = 25oC, VGS = 10V) (Figure 2) D Continuous (TC = 135oC, VGS = 5V) D Continuous (TC = 135oC, VGS = 4.5V) (Figure 2) D Pulsed Drain Current DM Figure 4 A A A APulsed A valanche Rating UIS Figures 6, 17, 18 Power Dissipation PD Derate Above 25oC 0.327 W W/oC Operating and Storage Temperature TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL 300 260 oC oC NOTE: 1. TJ = 25oC to 150oC. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only ratin g and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. UMW R www.umw-ic.com 1 UTD Semiconductor Co.,Limited I I I I Rating Symbol Value Unit

ectrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BV DSS ID = 250µA, VGS = 0V (Figure 12) 60 V ID = 250µA, VGS = 0V , TC = -40oC (Figure 12) 60 V Zero Gate Voltage Drain Current I DSS VDS = 55V, VGS = 0V 1 µA VDS = 50V, VGS = 0V, TC = 150oC 250 µA Gate to Source Leakage Current I GSS VGS = ±16V ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage V GS(TH) VGS = VDS , ID = 250µA (Figure 11) V Drain to Source On Resistance R DS(ON) ID = 18A, VGS = 10V (Figures 9, 10) 63 m Ω ID = 8A, V GS = 5V (Figure 9) 60 71 m Ω ID = 8A, VGS = 4.5V (Figure 9) 64 75 mΩ THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-252AA 3.06 oC/W Thermal Resistance Junction to AmbientR θJA 100 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time t ON VDD = 30V, ID = 8A VGS = 4.5V, RGS = 22Ω (Figures 15, 21, 22) 153 ns Turn-On Delay Time t d(ON) 13 ns Rise Time t r 89 ns Turn-Off Delay Time t d(OFF) 22 ns Fall Time t f 37 ns Turn-Off Time t OFF 89 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time t ON VDD = 30V, ID = 18A VGS = 10V, R GS = 24Ω (Figures 16, 21, 22) 59 ns Turn-On Delay Time t d(ON) 5.3 ns Rise Time t r 34 ns Turn-Off Delay Time t d(OFF) 41 ns Fall Time t f 50 ns Turn-Off Time t OFF 136 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Q g(TOT) VGS = 0V to 10V V DD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 14, 19, 20) 12 15 nC Gate Charge at 5V Q g(5) VGS = 0V to 5V 6.8 8.2 nC Threshold Gate Charge Q g(TH) VGS = 0V to 1V 0.54 0.65 nC Gate to Source Gate Charge Q gs 1.7 nC Gate to Drain “Miller” Charge Q gd 3 nC CAPACITANCE SPECIFICATIONS Input Capacitance C ISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) 485 pF Output Capacitance C OSS 130 pF Reverse Transfer Capacitance C RSS 28 pFSourc e to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage V SD ISD = 8A 1.25 V ISD = 4A 1.0 V Reverse Recovery Time t rr ISD = 8A, dISD /dt = 100A/µs 70 ns Reverse Recovered Charge Q RR ISD = 8A, dISD /dt = 100A/µs 165 nC www.umw-ic.com 2 UTD Semiconductor Co.,Limited 1 2.1 RFD12N06 60V N-Channel MOSFET UMW R

Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D L2P ackage Mechanical Data TO-252 Marking Ordering information www.umw-ic.com 7 UTD Semiconductor Co.,Limited Order code Package Baseqty Deliverymode TO-252 2500 Tape and reelUMW RFD12N06RLESM9A RFD12N06 60V N-Channel MOSFET UMW R