RES100N03 ROHM | Alldatasheet

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Switching (30V, 10A) RES100N03 zzzzFeatures 1) Low Qg. 2) Low on-resistance. 3) Exellent resistance to damage from static electricity. zzzzStructure Silicon N-channel MOS FET zzzzEquivalent circuit (1) Source (2) Source (3) Source (4) Gate (5) Drain (6) Drain (7) Drain (8) Drain (1) (2) (3) (1) (2) (3) (4)(4) ∗Gate Protection Diode. ∗ A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zzzzExternal dimensions (Units : mm) ROHM : SOP8 3.9−+0.15 1.5−+0.1 0.15 6.0−+0.3 Max.1.75 0.5−+0.1 5.0−+0.2 1.27 0.4−+0.1 0.1 0.2−+0.1 (1) (4) (8) (5) Each lead has same dimensions zzzzAbsolute maximum ratings (Ta = 25°C) ±20 1.3 5.2 150 −55~+150 VDSS VGSS IDR PD Tch V V A A W ID IDRP A IDP A Is Isp A A Tstg °C Symbol Limits UnitParameter ∗PW ≤10µs, Duty cycle≤1% Drain-Source Voltage Storage Temperature Channel Temperature Total Power Dissipation (TC=25°C ) Source Current (Body Diode) Reverse Drain Current Drain Current Gate-Source Voltage Pulsed Continuous Pulsed Continuous Pulsed Continuous

zzzzThermal resistance (T a = 25°C) Rth (ch-A) 62.5 °C / W Symbol Limits UnitParameter Channel to Ambient zzzzElectrical characteristics (Ta = 25°C) µA pF m Ω S V µA V pF pF ns ns ns ns nC nC nC VGS =0V f=1MHz VDS =10V VGS =10V ID =5A, VDD 5V R L=3Ω R GS =10Ω VDD =15V ID =10A, VGS =10V ID =10A, VGS =4.5V ID =10A, VGS =4V ID =10A, VDS =10V ID =1mA, VGS =0V VGS =±20V, VDS =0V VDS =30V, VGS =0V VDS =10V, ID =1mA Parameter Test Conditions UnitMin. Max.Typ. IGSS IDSS l Yfs l C iss Symbol C oss C rss tr tf Q gd Q gs Q g V (BR)DSS VGS (th) R DS (on)∗ td(on) td(off) ∗Pulsed Static Drain-Source On-State Resistance Gate-Drain Charge Gate-Source Charge Total Gate Charge Fall Time Turn-Off Delay Time Rise Time Turn-On Delay Time Reverse Transfer Capacitance Output Capacitance Input Capacitance Forward Transfer Admittance Gate Threshold Voltage Zero Gate Voltage Drain Current Drain-Source Breakdown Voltage Gate-Source Leakage −− 10 13 1600 900 280 57.028.5 4.9 5.8 1.0 ±10 2.5 VGS =10V ID =10A zzzzBody diode characteristics (Source-Drain Characteristics) (T a = 25°C) Parameter Test Conditions V Unit ns nC Min. 260 290 Typ. 1.5 Max. IDR =5.2A, VGS =0V Is=5.2A, VGS =0V di/dt=100A/µs VSD trr Q rr Symbol ∗Pulsed Reverse Recovery Charge Reverse Recovery Time Forward Voltage ∗

zzzzElectrical characteristic curves 0.1 0.01 Fig.1 Reverse Drein Current vs. Source - Drain Voltage REVERSE DREIN CURRENT : I DR (A) 0.0 0.5 1.0 1.5 SOURCE - DRAIN VOLTAGE : V GS (V) Ta=125°C 75°C −25°C 25°C VDS =0V Pulsed 0.1 100 0.10.01 1 10 Pulsed VDS =10V Ta=−25°C 25°C 75°C 125°C 0.01 DRAIN CURRENT : ID (A) Fig.2 Forward Transfer Admittance vs. Drain CurrentFORWARD TRANSFER ADMITTANCE : I Y fS I (S) Pulsed VGS =10V1 100.1 0.1 0.01 0.001 Ta=125°C 75°C −25°C 25°C DRAIN CURRENT : ID (A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (Ω ) Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (Ι) Pulsed VGS =4V1 100.1 0.1 0.01 0.001 Ta=125°C 75°C −25°C 25°C DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) (Ω ) 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.020 0−25 50 75 100 125 150 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω ) CHANNEL TEMPERATURE : Tch (°C) Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature −50 25 VGS =10V ID =10A Pulsed Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.050 0.030 0.040 0.010 0.020 0.000 0 2 4 6 8 1 01 21 41 61 82 0 GATE-SOURCE VOLTAGE : V GS (V) ON-STATE RESISTANCE : RDS(on) (Ω ) STATIC DRAIN-SOURCE Ta=25°C Pulsed ID =10A 25 50 4.0 3.0 2.0 1.0 0.0 −25 0−50 75 100 125 150 GATE THRESHOLD VOLTAGE : V GS(th) (V) CHANNEL TEMPERATURE : T ch (°C) Fig.7 Gate Threshold Voltage vs. Channel Temperature VDS =10V ID =1mA Pulsed 10000 1000 100 0.1 1 10 100 Ta=25°C f=1MHz VGS =0V Pulsed Fig.8 Typical Capacitance vs. Drain-Source Voltage CAPACITANCE : C (pF) DRAIN-SOURCE VOLTAGE : V DS (V) C iss C oss C rss 0 8 16 24 32 40 48 Ta=25°C VDD =24V ID =7A Pulsed VDS VGS TOTAL GATE CHARGE : Qg (nC) DRAIN-SOURCE VOLTAGE : V DS (V) GATE-SOURCE VOLTAGE : V GS (V) Fig.9 Dynamic Input Characteristics

0.1 1 10 SWITCHING TIME : t (ns) DRAIN CURRENT : ID (A) Fig.10 Switching Characteristics Ta=25°C VDD =30V VGS =10V R G =10Ω Pulsed tf td (off) tr td (on) 108642 DRAIN-SOURCE VOLTAGE : V DS (V) Fig.11 Typical Output CharacteristicsDRAIN CURRENT : ID (A) VGS =2.5V VGS =3V VGS =6V VGS =4.5V VGS =4V VGS =3.5V Ta=25°C Pulsed NORMALIZED TRANSIENT THERMAL RESISTANCE : r (t) PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width 10µ 100µ 1m 10m 100m 1 10 100 0.1 0.01 0.001 D =0.02 D =Single D =0.01 D =0.05 D =0.1 D =1 D =0.2 D =0.5 Tc=25°C θth(ch-c) (t)=r(t) θth(ch-c) θth(ch-c)=6.25°C / W PW T D =PW T