REF200_07 BURR-BROWN | Alldatasheet
Document overview
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Technical content
© 1988 Burr-Brown Corporation PDS-851D Printed in U.S.A. October, 1993
FEATURES
l COMPLETELY FLOATING: No Power Supply or Ground Connections l HIGH ACCURACY: 100 µA ±0.5% l LOW TEMPERATURE COEFFICIENT: ±25ppm/ °C l WIDE VOLTAGE COMPLIANCE: 2.5V to 40V l ALSO INCLUDES CURRENT MIRROR
APPLICATIONS
l OFFSETTING CURRENT LOOPS l LOW VOLTAGE REFERENCES l CHARGE-PUMP CIRCUITRY l HYBRID MICROCIRCUITS REF200 DUAL CURRENT SOURCE/CURRENT SINK
DESCRIPTION
The REF200 combines three circuit building-blocks on a single monolithic chip—two 100µA current sources and a current mirror. The sections are dielectrically isolated, making them completely independent. Also, since the current sources are two- terminal devices, they can be used equally well as current sinks. The performance of each section is individually measured and laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any current. These and many other circuit techniques are shown in the Applications section of this Data Sheet. The REF200 is available in plastic 8-pin mini-DIP and SOIC packages. I High I High Substrate Mirror In I Low I Low Mirror Out Mirror Common 1 2 1 2 8765 1234 100µA 100µA International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 REF200 REF200 SBVS020
At TA = +25°C, VS = 15V, unless otherwise noted. REF200AP, AU PARAMETER CONDITION MIN TYP MAX UNITS CURRENT SOURCES Current Accuracy ±0.25 ±1% Current Match ±0.25 ±1% Temperature Drift Specified Temp Range 25 ppm/ °C Output Impedance 2.5V to 40V 20 100 M Ω 3.5V to 30V 200 500 M Ω Noise BW = 0.1Hz to 10Hz 1 nAp-p f = 10kHz 20 pA/ √Hz Voltage Compliance (1%) T MIN to TMAX See Curves Capacitance 10 pF CURRENT MIRROR I = 100µA Unless Otherwise Noted Gain 0.995 1 1.005 Temperature Drift 25 ppm/ °C Impedance (output) 2V to 40V 40 100 M Ω Nonlinearity I = 0 µA to 250µA 0.05 % Input Voltage 1.4 V Output Compliance Voltage See Curves Frequency Response (–3dB) Transfer 5 MHz TEMPERATURE RANGE Specification –25 +85 °C Operating –40 +85 °C Storage –40 +125 °C ELECTRICAL The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS I I Substrate Mirror Input Low Low Mirror Common Mirror Output High High I I Top View DIP/SOIC PACKAGE DRAWING TEMPERATURE PRODUCT PACKAGE NUMBER (1) RANGE REF200AP 8-Pin Plastic DIP 006 –25 °C to +85°C REF200AU 8-Pin SOIC 182 –25 °C to +85°C NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) Grade designation “A” may not be marked. Absence of grade designation indicates A grade. PACKAGE/ORDERING INFORMATION ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
TYPICAL PERFORMANCE CURVES At TA = +25°C, VS = +15V, unless otherwise noted. 100.1 100 99.9 99.8 99.7 99.6 99.5 –25–50 25 75 50 125 1000 Temperature (°C) Current (µA) 85°CDrift specified by “box method” (See text) CURRENT SOURCE TYPICAL DRIFT vs TEMPERATURE 600 500 400 300 200 100 501 0 Temperature Drift (ppm/°C) Quantity (Units) Distribution of three production lots — 1284 Current Sources. 2015 25 35 30 40 50 45 55 65 60 2 5 117 30 15 6 0 11 501 454 86 66 CURRENT SOURCE TEMPERATURE DRIFT DISTRIBUTION 101 100.8 100.6 100.4 100.2 100 99.8 99.6 99.4 99.2 Current (µA) 0 5 10 15 20 25 30 35 40 Voltage (V) CURRENT SOURCE OUTPUT CURRENT vs VOLTAGE CURRENT SOURCE OUTPUT CURRENT vs VOLTAGE 100.5 100.4 100.3 100.2 100.1 100 99.9 99.8 99.7 99.6 99.5 Voltage (V) 12345 Current (µA) –55°C 25°C 125°C 1000 900 800 700 600 500 400 300 200 100 Reverse Current (µA) Reverse Voltage (V) CURRENT SOURCE REVERSE CURRENT vs REVERSE VOLTAGE Reverse Voltage Circuit Model 12kΩ 7V 5kΩ Safe Reverse Current Safe Reverse Voltage Output Current (500pA/div) CURRENT SOURCE CURRENT NOISE (0.1Hz to 10Hz) Time (500ms/div)
TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, VS = +15V, unless otherwise noted. MIRROR TRANSFER NONLINEARITY 0.1 0.08 0.06 0.04 0.02 –0.02 –0.04 –0.06 –0.08 –0.01 Current (µA) 50 100 150 200 250 Nonlinearity (% of 250µA) Data from Three Representative Units (Least-square fit) Error (%) 10µA 100µA 1mA Mirror Current (A) MIRROR GAIN ERROR vs CURRENT V = 1.25V V = 1V V = 1.5V O O O Input Voltage (V) 1µA 10µA 100µA 1mA 10mA Current MIRROR INPUT VOTAGE/OUTPUT COMPLIANCE VOLTAGE vs CURRENT Input Voltage Output Compliance Voltage
FIGURE 9. Op Amp Offset Adjustment Circuits. NOTE: (1) For N Op Amps, use Potentiometer Resistance = N • 100Ω.
(1) Zero volts shunt compliance. allow swing to zero volts from rail. with 0.1V across R. Max IO limited by FET. FIGURE 10. Adjustable Current Sources.
Orderable Device Status(1) Package Type Package Drawing Pins Package Qty Eco Plan(2) Lead/Ball FinishMSL Peak Temp (3) REF200AP OBSOLETE PDIP P 8 TBD Call TI Call TI REF200AU ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR REF200AU/2K5 ACTIVE SOIC D 8 2500 Pb-Free (RoHS) CU NIPDAU Level-3-260C-168 HR REF200AU/2K5E4 ACTIVE SOIC D 8 2500 Pb-Free (RoHS) CU NIPDAU Level-3-260C-168 HR REF200AUE4 ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR REF200AUG4 ACTIVE SOIC D 8 100 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR (1)The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2)Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontentfor the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS):TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt):This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br):TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. PACKAGE OPTION ADDENDUM www.ti.com 26-Mar-2007 Addendum-Page 1
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