REF200 BURR-BROWN | Alldatasheet

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Technical content

© 1988 Burr-Brown Corporation PDS-851D Printed in U.S.A. October, 1993

FEATURES

l COMPLETELY FLOATING: No Power Supply or Ground Connections l HIGH ACCURACY: 100 µA ±0.5% l LOW TEMPERATURE COEFFICIENT: ±25ppm/ °C l WIDE VOLTAGE COMPLIANCE: 2.5V to 40V l ALSO INCLUDES CURRENT MIRROR

APPLICATIONS

l OFFSETTING CURRENT LOOPS l LOW VOLTAGE REFERENCES l CHARGE-PUMP CIRCUITRY l HYBRID MICROCIRCUITS REF200 DUAL CURRENT SOURCE/CURRENT SINK

DESCRIPTION

The REF200 combines three circuit building-blocks on a single monolithic chip—two 100µA current sources and a current mirror. The sections are dielectrically isolated, making them completely independent. Also, since the current sources are two- terminal devices, they can be used equally well as current sinks. The performance of each section is individually measured and laser-trimmed to achieve high accuracy at low cost. The sections can be pin-strapped for currents of 50µA, 100µA, 200µA, 300µA or 400µA. External circuitry can be used to obtain virtually any current. These and many other circuit techniques are shown in the Applications section of this Data Sheet. The REF200 is available in plastic 8-pin mini-DIP and SOIC packages. I High I High Substrate Mirror In I Low I Low Mirror Out Mirror Common 1 2 1 2 8765 1234 100µA 100µA International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 REF200 REF200

At TA = +25°C, VS = 15V, unless otherwise noted. REF200AP, AU PARAMETER CONDITION MIN TYP MAX UNITS CURRENT SOURCES Current Accuracy ±0.25 ±1% Current Match ±0.25 ±1% Temperature Drift Specified Temp Range 25 ppm/ °C Output Impedance 2.5V to 40V 20 100 M Ω 3.5V to 30V 200 500 M Ω Noise BW = 0.1Hz to 10Hz 1 nAp-p f = 10kHz 20 pA/ √Hz Voltage Compliance (1%) T MIN to TMAX See Curves Capacitance 10 pF CURRENT MIRROR I = 100µA Unless Otherwise Noted Gain 0.995 1 1.005 Temperature Drift 25 ppm/ °C Impedance (output) 2V to 40V 40 100 M Ω Nonlinearity I = 0 µA to 250µA 0.05 % Input Voltage 1.4 V Output Compliance Voltage See Curves Frequency Response (–3dB) Transfer 5 MHz TEMPERATURE RANGE Specification –25 +85 °C Operating –40 +85 °C Storage –40 +125 °C ELECTRICAL The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS I I Substrate Mirror Input Low Low Mirror Common Mirror Output High High I I Top View DIP/SOIC PACKAGE DRAWING TEMPERATURE PRODUCT PACKAGE NUMBER (1) RANGE REF200AP 8-Pin Plastic DIP 006 –25 °C to +85°C REF200AU 8-Pin SOIC 182 –25 °C to +85°C NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book. (2) Grade designation “A” may not be marked. Absence of grade designation indicates A grade. PACKAGE/ORDERING INFORMATION ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

TYPICAL PERFORMANCE CURVES At TA = +25°C, VS = +15V, unless otherwise noted. 100.1 100 99.9 99.8 99.7 99.6 99.5 –25–50 25 75 50 125 1000 Temperature (°C) Current (µA) 85°CDrift specified by “box method” (See text) CURRENT SOURCE TYPICAL DRIFT vs TEMPERATURE 600 500 400 300 200 100 501 0 Temperature Drift (ppm/°C) Quantity (Units) Distribution of three production lots — 1284 Current Sources. 2015 25 35 30 40 50 45 55 65 60 2 5 117 30 15 6 0 11 501 454 86 66 CURRENT SOURCE TEMPERATURE DRIFT DISTRIBUTION 101 100.8 100.6 100.4 100.2 100 99.8 99.6 99.4 99.2 Current (µA) 0 5 10 15 20 25 30 35 40 Voltage (V) CURRENT SOURCE OUTPUT CURRENT vs VOLTAGE CURRENT SOURCE OUTPUT CURRENT vs VOLTAGE 100.5 100.4 100.3 100.2 100.1 100 99.9 99.8 99.7 99.6 99.5 Voltage (V) 12345 Current (µA) –55°C 25°C 125°C 1000 900 800 700 600 500 400 300 200 100 Reverse Current (µA) Reverse Voltage (V) CURRENT SOURCE REVERSE CURRENT vs REVERSE VOLTAGE Reverse Voltage Circuit Model 12kΩ 7V 5kΩ Safe Reverse Current Safe Reverse Voltage Output Current (500pA/div) CURRENT SOURCE CURRENT NOISE (0.1Hz to 10Hz) Time (500ms/div)

TYPICAL PERFORMANCE CURVES (CONT) At TA = +25°C, VS = +15V, unless otherwise noted. MIRROR TRANSFER NONLINEARITY 0.1 0.08 0.06 0.04 0.02 –0.02 –0.04 –0.06 –0.08 –0.01 Current (µA) 50 100 150 200 250 Nonlinearity (% of 250µA) Data from Three Representative Units (Least-square fit) Error (%) 10µA 100µA 1mA Mirror Current (A) MIRROR GAIN ERROR vs CURRENT V = 1.25V V = 1V V = 1.5V O O O Input Voltage (V) 1µA 10µA 100µA 1mA 10mA Current MIRROR INPUT VOTAGE/OUTPUT COMPLIANCE VOLTAGE vs CURRENT Input Voltage Output Compliance Voltage

FIGURE 9. Op Amp Offset Adjustment Circuits. NOTE: (1) For N Op Amps, use Potentiometer Resistance = N • 100Ω.

(1) Zero volts shunt compliance. allow swing to zero volts from rail. with 0.1V across R. Max IO limited by FET. FIGURE 10. Adjustable Current Sources.