REF1112 TI | Alldatasheet
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Technical content
REF1112 10ppm/°C, 1μA, 1.25V Shunt Voltage Reference
1 Features
- Small package: SOT23-3
- Fixed reverse breakdown voltage of 1.25V
- Key specifications – Output voltage tolerance: ±0.2% (maximum) – Low output noise (0.1Hz to 10Hz): 25μVpp (typical) – Temperature range: −40°C to +125°C – Operating current range: 1.2μA to 5mA – Low temperature coefficient from 0°C to +70°C: 30ppm/°C (maximum) – Low temperature coefficient from –40°C to +85°C: 50ppm/°C (maximum)
2 Applications
- Battery-powered instruments
- Building security sensors
- Medical equipment
- Field transmitters
- Calibrators SPACER RBIAS VS VOUT IREF + ILOAD IREF RLOAD ILOAD RBIAS = VS − V D ILOAD + IREF Shunt Reference Application Schematic
3 Description
The REF1112 device is a two-terminal shunt reference designed for power and space sensitive applications. The REF1112 features an operating current of 1 μA in a SOT23-3 package and is an improved, lower power voltage reference for designs currently using voltage references in larger packages, such as the REF1004 and LT1004. The REF1112 is specified from –40°C to +85°C with operation extending from –40°C to +125°C. The REF1112 complements other 1 μA components from Texas Instruments including the OPA349 and TLV240x low-power operational amplifiers, and the TLV349x micropower voltage comparator. Device Information PART NUMBER PACKAGE (1) BODY SIZE (NOM) (2) REF1112 SOT-23 (3) 2.92mm × 1.3mm (1) For all available packages, see the orderable addendum at the end of the data sheet. (2) The package size (length × width) is a nominal value and includes pins, where applicable. ㅤ ㅤ ㅤ ㅤ ㅤ 3 NC SOT23 GND VO A. NC indicates the pin must be left unconnected or connected to GND Pinout REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA.
10 Mechanical, Packaging, and Orderable
SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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4 Pin Configuration and Functions
Figure 4-1. DBZ Package 3-Pin SOT-23 Top View Table 4-1. Pin Functions PIN I/O DESCRIPTION NAME NO. Vo 1 I/O Shunt Current/Voltage input GND 2 O Ground connection NC 3 - Must float or connect to GND
5 Specifications
5.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT Reverse breakdown current 10 mA Forward current 10 mA Operating temperature –55 125 °C Junction temperature 150 °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods can affect device reliability.
5.2 ESD Ratings
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.
5.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT IREF Reverse current 0.0012 5 mA TA Operating temperature –40 125 °C www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 3 Product Folder Links: REF1112
5.4 Thermal Information
THERMAL METRIC(1) REF1112 UNITDBZ (SOT-23)
3 PINS
RθJA Junction-to-ambient thermal resistance 219 °C/W RθJC(top) Junction-to-case (top) thermal resistance 99 °C/W RθJB Junction-to-board thermal resistance 79 °C/W ψJT Junction-to-top characterization parameter 6.7 °C/W ψJB Junction-to-board characterization parameter 79.6 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
5.5 Electrical Characteristics
VR = 1.25V, TA = +25°C, IREF = 1.2μA and CLOAD = 10nF, unless otherwise noted. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VR Reverse breakdown voltage IREF = 1.2µA 1.2475 1.25 1.2525 V –0.2% 0.2% ΔVR Temperature coefficient 1.2μA ≤ IREF ≤ 5mA, TA = 0°C to +70°C 10 30 ppm/°C1.5μA ≤ IREF ≤ 5mA, TA = –40°C to +85°C 15 50 1.5μA ≤ IREF ≤ 5mA, TA = –40°C to +125°C 15 IRMIN Minimum operating current 1 1.2 µA ΔVR/ΔIR Reverse breakdown voltage change with current 1.2μA ≤ IREF ≤ 5mA 100 150 ppm/mA ZR Reverse dynamic impedance 1.2μA ≤ IREF ≤ 5mA 0.135 0.2 Ω eN Low-frequency noise(1) 0.1Hz ≤ IREF ≤ 10Hz 25 μVPP VHYST Thermal hysteresis(2) 100 ppm ΔVR Long-term stability +25°C ± 0.1°C 60 ppm/kHr (1) Peak-to-peak noise is measured with a 2-pole high-pass filter at 0.1Hz and a 4-pole, low-pass Chebyshev filter at 10Hz. (2) Thermal hysteresis is defined as the change in output voltage after operating the device at +25°C, cycling the device through the specified temperature range, and returning to +25°C. REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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5.6 Typical Characteristics
At TA = +25°C, IREF = 10μA and CLOAD = 10nF, unless otherwise noted. Reverse Voltage (V) Reverse Current ( A) μ 100 0.1 0.01 10K − 40/c176C ≤ TA ≤ 125/c176C Voltage Regulation Region Figure 5-1. Reverse Characteristics Forward Voltage (V) Forward Current (mA) 1.00.10.01 100.001 1.0 0.8 0.6 0.4 0.2 0.0 TA = 25/c176C Behaves as standard silicon diode Figure 5-2. Forward Characteristics Temperature ( C)/c176 Reverse Voltage (V) 5−15−35 25 45 65−55 85 105 125 1.255 1.254 1.253 1.252 1.251 1.250 1.249 1.248 Figure 5-3. Temperature Drift Reverse Current (mA) Output Voltage Change (mV) 0.001 0.5 0.01 0.1 1 10 0.4 0.3 0.2 0.1 0.0 −40 /c176C ≤ T A ≤ 125 /c176C Figure 5-4. Reverse Voltage Change vs Current Reverse Current (mA) Dynamic Impedance (Ω) 0.10.010.001 1 10 0.1 0.01 100 −40 ≤/c176C TA ≤ 125 /c176C f = 10Hz Figure 5-5. Reverse Dynamic Impedance Frequency (Hz) Dynamic Impedance (Ω)Ω) 100101 1k 10k 0.1 0.01 100 10k 100k TA = +25/c176C IREF = 5mA IREF = 10μA Figure 5-6. Reverse Dynamic Impedance www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 5 Product Folder Links: REF1112
5.6 Typical Characteristics (continued)
At TA = +25°C, IREF = 10μA and CLOAD = 10nF, unless otherwise noted. Reverse Breakdown Voltage (V) 1.2475 1.2500 1.2525 Distribution (%) Figure 5-7. Reverse Breakdown Voltage Distribution TEMPERATURE DRIFT DISTRIBUTION Drift (ppm//c176C) 0 5 10 15 20 25 30 35 Distribution (%) 0/c176C to +70/c176C Figure 5-8. Temperature Drift Distribution Drift (ppm//c176C) Distribution (%) −40 /c176 /c176C to +85 C 0 5 10 15 20 25 30 35 40 45 50 Figure 5-9. Temperature Drift Distribution LOW-FREQUENCY NOISE, 0.1 to 10Hz 1.0s/div μV/div Figure 5-10. Low-Frequency Noise, 0.1 to 10Hz 10ms/div Voltage (V) CLOAD = 0.01μF VOUT VIN 0.01μF VOUT VIN 375kΩ Figure 5-11. Response Time 25ms/div Voltage (V) CLOAD = 0.1μF VOUT VIN 0.1μF VOUT VIN IREF 375kΩ Figure 5-12. Response Time REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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6 Detailed Description
6.1 Overview
The REF1112 is a 2-terminal bandgap reference diode designed for high accuracy with outstanding temperature characteristics at low operating currents. Precision thin-film resistors result in 0.2% initial voltage accuracy and 50ppm/°C maximum temperature drift. The REF1112 is specified from –40°C to +85°C, with operation from –40°C to +125°C, and is offered in a SOT23-3 package.
6.2 Functional Block Diagram
6.3 Feature Description
The REF1112 device is effectively a precision Zener diode. The part requires a small quiescent current for regulation, and regulates the output voltage by shunting more or less current to ground, depending on input voltage and load. The only external component requirement are an resistor between the cathode and the input voltage to set the input current and an external capacitor at the output to maintain stability under varying loads.
6.4 Device Functional Modes
The REF1112 device is a fixed output voltage part where the feedback is internal. Therefore, the part can only operate in a closed-loop mode and the output voltage cannot be adjusted. The output voltage remains in regulation as long as I REF is between I REFMIN (see Electrical Characteristics) and I REFMAX is 5mA. A proper selection of the external resistor for input voltage range and load current range maintains that these conditions are met. www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 7 Product Folder Links: REF1112
7 Application and Implementation
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes, as well as validating and testing their design implementation to confirm system functionality.
7.1 Application Information
Typical connections for the REF1112 are shown in Figure 7-1 . A minimum 1 μA bias current is required to maintain a stable output voltage and can be provided with a resistor connected to the supply voltage. I BIAS depends on the values selected for R BIAS and V S, and varies as a sum of the minimum operating current and the load current. To maintain stable operation, the value of R BIAS must be low enough to maintain the minimum operating current at the minimum and maximum load and supply voltage levels. A 0.1μF load capacitor is recommended to maintain stability under varying load conditions. A minimum 0.01 μF load capacitor is required for stable operation. Start-up time for the REF1112 is be affected, depending on the value of load capacitance and the bias currents being used. A 1 μF power-supply bypass capacitor is recommended to minimize supply noise within the circuit. The REF1112 shunt voltage reference provides a versatile function for low power and space-conservative applications.
7.2 Typical Applications
7.2.1 Shunt Regulator
IBIAS = IREF + ILOAD VS VREF RBIAS ILOAD IBIAS = VS − VREF RBIAS
0.1 Fμ IREF
1 Fμ Figure 7-1. Typical Connections
7.2.1.1 Design Requirements
Table 7-1. Design Parameters DESIGN PARAMETER EXAMPLE VALUE Supply voltage 3V Cathode current (IREF) 1.2µA Load Current (ILOAD) 50uA REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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7.2.1.2 Detailed Design Procedure
When using the REF1112 as a reference, determine the following:
- Supply voltage range
- Current source resistance
- Reference voltage accuracy To design using the REF1112, make sure that the VS is larger than VREF. The resistor R BIAS sets the cathode current of the REF1112, I R. Make sure that this current remains in the operational region of the part for the entire VS and load range. Using this information, select a RBIAS such that: IREFMIN < IREF < IREFMAX where IREFMAX = 5mA. In this application the I REF is the operating current of the REF1112 plus the maximum possible I LOAD under no-load conditions.
7.2.2 MicroPOWER 3μA, 1V Voltage Reference
0.1μF VREF VOUT = 1V 795kΩ 250kΩ 1MΩ REF1112 TL V2401 Copyright © 2018, Texas Instruments Incorporated Figure 7-2. MicroPOWER 3μA, 1V Voltage Reference
7.2.2.1 Design Requirements
The REF1112 can be scaled to provide extremely low power reference voltages. Figure 7-2 shows the REF1112 used as a 1V VOUT, 3μA voltage reference.
7.2.2.2 Detailed Design Procedure
Set RBIAS such that the current through the shunt reference, IREF, is greater than IREFMIN + ILOAD. Use a resistor divider to set the required voltage to the input of the amplifier. The TLV2401 requires an input bias current maximum of 350pA which allows the use of larger resistor values to save power. www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 9 Product Folder Links: REF1112
7.2.3 2.5V Reference on 1μA
0.1 F μ
VOUT = 2.5V Figure 7-3. 2.5V Reference on 1μA
7.2.3.1 Design Requirements
Create a 2.5V reference that consumes 1µA of IREF.
7.2.3.2 Detailed Design Procedure
Figure 7-3 shows the REF1112 used as a 2.5V reference on 1 μA. This is done by stacking the REF1112 in series. VOUT = 2 × VREF (1) where
- VREF is the reference voltage In this case, VOUT = 2 × 1.25V = 2.5V The IBIAS is still 1µA because the stacked REF1112 are in series.
7.2.4 Adjustable Voltage Shunt Reference
For applications requiring a stable voltage reference capable of sinking higher than 5mA of current, a REF1112 combined with an OPA347 can sink up to 10mA of current. This configuration is shown in Figure 7-4 , and through appropriate selection of R1 and R2, can be used to provide a wide range of stable reference voltages. IBIAS 2.5V 1.25V 10kΩ 10kΩ 10kΩ OP A347
0.01 F μ
VOUT = 1.25 (1 + R1 / R2) VS RSET Copyright © 2018, Texas Instruments Incorporated Figure 7-4. Adjustable Voltage Shunt Reference REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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7.2.5 Level Shift to Achieve Full ADC Input Range
The REF1112 is also useful for level shifting, and as shown in Figure 7-5, can be used to achieve the full input range of an analog-to-digital converter (ADC). VREF VIN VS 1.25V 0.1μF ADC VOUT Figure 7-5. REF1112 Provides a Level Shift to Achieve Full ADC Input Range
7.2.6 Stable Current Source
The REF1112 can be configured with an additional diode and NPN transistor to provide a temperature compensated current reference as shown in Figure 7-6. VS ISET 0.1 μF RSET 10kΩ ISET = VREF RSET Figure 7-6. REF1112 as a Stable Current Source
7.3 Power Supply Recommendations
While a bypass capacitor is not required on the input voltage line, TI recommends reducing noise on the input which can affect the output. A 0.1μF ceramic capacitor or larger is recommended.
7.4 Layout
7.4.1 Layout Guidelines
Place decoupling capacitors as close to the device as possible. Use appropriate widths for traces when shunting high currents to avoid excessive voltage drops. www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 11 Product Folder Links: REF1112
7.4.2 Layout Example
Figure 7-7. Layout Example REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 www.ti.com
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8 Device and Documentation Support
8.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on Notifications to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.
8.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight from the experts. Search existing answers or ask your own question to get the quick design help you need. Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
8.3 Trademarks
TI E2E™ is a trademark of Texas Instruments. All trademarks are the property of their respective owners.
8.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
8.5 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
9 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision D (March 2018) to Revision E (December 2024) Page Changes from Revision C (March 2008) to Revision D (March 2018) Page
- Added Device Information table, Pin Configuration and Functions section, Absolute Maximum Ratings table, ESD Ratings table, Recommended Operating Conditions table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical,
- Changed key graphic text note from: NC indicates pin can be left unconnected to: NC indicates the pin must
- Removed the Package/Ordering Information table and moved the information over to the Mechanical,
10 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. www.ti.com REF1112 SBOS283E – SEPTEMBER 2003 – REVISED DECEMBER 2024 Copyright © 2024 Texas Instruments Incorporated Submit Document Feedback 13 Product Folder Links: REF1112
www.ti.com 23-May-2025 PACKAGING INFORMATION Orderable part number Status (1) Material type (2) Package | Pins Package qty | Carrier RoHS (3) Lead finish/ Ball material (4) MSL rating/ Peak reflow (5) Op temp (°C) Part marking (6) REF1112AIDBZR Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZR.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZRG4 Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZRG4.A Active Production SOT-23 (DBZ) | 3 3000 | LARGE T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZT Active Production SOT-23 (DBZ) | 3 250 | SMALL T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZT.A Active Production SOT-23 (DBZ) | 3 250 | SMALL T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZTG4 Active Production SOT-23 (DBZ) | 3 250 | SMALL T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A REF1112AIDBZTG4.A Active Production SOT-23 (DBZ) | 3 250 | SMALL T&R Yes NIPDAU Level-1-260C-UNLIM -40 to 125 R11A (1) Status: For more details on status, see our product life cycle. (2) Material type: When designated, preproduction parts are prototypes/experimental devices, and are not yet approved or released for full production. Testing and final process, including without limitation quality assurance, reliability performance testing, and/or process qualification, may not yet be complete, and this item is subject to further changes or possible discontinuation. If available for ordering, purchases will be subject to an additional waiver at checkout, and are intended for early internal evaluation purposes only. These items are sold without warranties of any kind. (3) RoHS values: Yes, No, RoHS Exempt. See the TI RoHS Statement for additional information and value definition. (4) Lead finish/Ball material: Parts may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two lines if the finish value exceeds the maximum column width. (5) MSL rating/Peak reflow: The moisture sensitivity level ratings and peak solder (reflow) temperatures. In the event that a part has multiple moisture sensitivity ratings, only the lowest level per JEDEC standards is shown. Refer to the shipping label for the actual reflow temperature that will be used to mount the part to the printed circuit board. (6) Part marking: There may be an additional marking, which relates to the logo, the lot trace code information, or the environmental category of the part. Multiple part markings will be inside parentheses. Only one part marking contained in parentheses and separated by a "~" will appear on a part. If a line is indented then it is a continuation of the previous line and the two combined represent the entire part marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1
www.ti.com 23-May-2025 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2
PACKAGE MATERIALS INFORMATION www.ti.com 26-Nov-2024 TAPE AND REEL INFORMATION Reel Width (W1) REEL DIMENSIONS A0B0K0WDimension designed to accommodate the component lengthDimension designed to accommodate the component thicknessOverall width of the carrier tapePitch between successive cavity centersDimension designed to accommodate the component width TAPE DIMENSIONSK0 P1B0WA0Cavity QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Pocket QuadrantsSprocket HolesQ1Q1Q2Q2Q3Q3Q4Q4User Direction of Feed P1ReelDiameter *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION www.ti.com 26-Nov-2024 TAPE AND REEL BOX DIMENSIONS Width (mm) W LH *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) REF1112AIDBZR SOT-23 DBZ 3 3000 200.0 183.0 25.0 REF1112AIDBZRG4 SOT-23 DBZ 3 3000 200.0 183.0 25.0 REF1112AIDBZT SOT-23 DBZ 3 250 200.0 183.0 25.0 REF1112AIDBZTG4 SOT-23 DBZ 3 250 200.0 183.0 25.0 Pack Materials-Page 2
www.ti.com PACKAGE OUTLINE C 0.20
0.08 TYP
0.25 2.64 2.10
1.12 MAX
0.10
0.01 TYP
3X 0.5 0.3 0.6
0.2 TYP
1.9 0.95 0 -8 TYP 4X 0 -15 4X 4 -15 A 3.04 2.80 B1.4 1.2 (0.95) (0.15) (0.125) SOT-23 - 1.12 mm max heightDBZ0003A SMALL OUTLINE TRANSISTOR 4214838/F 08/2024 NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. Reference JEDEC registration TO-236, except minimum foot length. 4. Support pin may differ or may not be present. 5. Body dimensions do not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.25mm per side
0.2 C A B
0.1 C SCALE 4.000
www.ti.com EXAMPLE BOARD LAYOUT
0.07 MAX
0.07 MIN
3X (1.3) 3X (0.6) (2.1) 2X (0.95) (R0.05) TYP 4214838/F 08/2024 SOT-23 - 1.12 mm max heightDBZ0003A SMALL OUTLINE TRANSISTOR NOTES: (continued) 5. Publication IPC-7351 may have alternate designs. 6. Solder mask tolerances between and around signal pads can vary based on board fabrication site. SYMM LAND PATTERN EXAMPLE SCALE:15X PKG SOLDER MASK OPENING METAL UNDER SOLDER MASK SOLDER MASK DEFINED METALSOLDER MASK OPENING NON SOLDER MASK DEFINED (PREFERRED) SOLDER MASK DETAILS
www.ti.com EXAMPLE STENCIL DESIGN (2.1) 2X(0.95) 3X (1.3) 3X (0.6) (R0.05) TYP SOT-23 - 1.12 mm max heightDBZ0003A SMALL OUTLINE TRANSISTOR 4214838/F 08/2024 NOTES: (continued) 7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 8. Board assembly site may have different recommendations for stencil design. SOLDER PASTE EXAMPLE BASED ON 0.125 THICK STENCIL SCALE:15X SYMM PKG
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