Memory

RE46C167

Microchip Technology

Alarm Memory 07/14/15

Manufacturer: Microchip Technology

Document: 30 Pages / 563Kb

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Technical content

Features

Temporal Horn Pattern or Continuous Tone
Alarm Memory
Sensitivity Control Times: - 9 minutes (RE46C165/6) - 1.2 minutes (RE46C167/8)
I/O Filter and Charge Dump
Interconnect up to 40 Detectors
Internal Power-on Reset (POR)
>2000V ESD Protection (HBM) on All Pins
Low Quiescent Current Consumption (<8 µA)
Internal Low Battery Detection and Chamber Test
RoHS Compliant Lead-Free Packaging

Description

The RE46C165/6/7/8 devices are low-power, CMOS photoelectric type, smoke detector ICs. With minimal external components, these circuits will provide all the required features for a photoelectric type smoke detector. Each design incorporates a gain-selectable photo amplifier for use with an infrared emitter/detector pair. An internal oscillator strobes power to the smoke detection circuitry for 100 µs, every 10 seconds, to keep standby current to a minimum. If smoke is sensed, the detection rate is increased to verify an alarm condition. A High-Gain mode is available for push button chamber testing. A check for a low battery condition and chamber integrity is performed every 43 seconds when in standby. The temporal horn pattern supports the NFPA 72 emergency evacuation signal. An interconnect pin allows multiple detectors to be connected so when one unit alarms, all units will sound. A charge dump feature will quickly discharge the interconnect line when exiting a local alarm. The interconnect input is also digitally filtered. An internal timer allows for single button, push-to-test to be used for a Reduced Sensitivity mode. An alarm memory feature allows the user to determine if the unit has previously entered a local alarm condition. Utilizing low-power CMOS technology, the RE46C165/6/7/8 was designed for use in smoke detectors that comply with Underwriters Laboratory Specification UL217 and UL268. CMOS Photoelectric Smoke Detector ASIC with Interconnect, Timer Mode and Alarm Memory

DS20002251B-page 2  2010-2016 Microchip Technology Inc. Package Types Functional Block Diagram RE46C165/6/7/8 PDIP , SOIC C1 1 DETECT STROBE V DD IRED IO HORNB TEST VSEN VSS ROSC COSC LED FEED HORNS Logic and Timing Bias and Power Reset VDD (5) VSEN (15) C1 (1) DETECT (3) C2 (2) TEST (16) 124K 276K IO (7) FEED (10) HS (9) LED (11) IRED (6) ROSC (13) COSC (12) HB (8) STROBE (4) VDD – 5V VDD – 3.5V Photoamp VSS (14) Reference Oscillator

 2010-2016 Microchip Technology Inc. DS20002251B-page 3 RE46C165/6/7/8 Typical Application Push-to-Test BatteryC3(1,2) 1µ F 1.5 nF R12 10M 100k R13 330 C6(3) 1.0 nF R10(3) 1.5M R11(3) 220k 330 10 µF 100 µF 560 C2 4.7 nF C1 47 nF 4.7k 8.2k RADJ2 120k RADJ1 1.0M R6 1k DETECT STROBE VDD VSS IRED IO HORNB HORNS FEED LED COSC ROSC VSEN TEST 249k To Other Units Note 1: C3 should be located as close as possible to the device power pins. 2: C3 is typical for an alkaline battery. This capacitance should be increased to 4.7 µF or greater for a carbon battery. 3: R10, R11 and C6 are typical values and may be adjusted to maximize sound pressure. Photo Chamber

DS20002251B-page 4  2010-2016 Microchip Technology Inc. NOTES:

 2010-2016 Microchip Technology Inc. DS20002251B-page 5 RE46C165/6/7/8

1.0 ELECTRICAL

Absolute Maximum Ratings† †N o t i c e : Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these, or any other conditions above those indicated in the operation listings of this specification, is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS(3) Typical Application (unless otherwise noted), VSS = 0V Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Supply Voltage V DD 5 6 — 12 V Operating Supply Current I DD1 5 — 4 6 µA COSC = V SS, LED off IDD2 5 — 5.5 8 µA COSC = V SS, LED off, VDD = 12V IDD3 5 — — 2 mA COSC = V SS, STROBE on IRED off IDD4 5 — — 3 mA COSC = V SS, STROBE on, IRED on (Note 1) Input Voltage High V IH1 10 6.2 4.5 — V FEED VIH2 7 3.2 — — V No local alarm, I/O as an input VIH3 15 1.6 — — V VSEN VIH4 16 8.5 — — V TEST Input Voltage Low V IL1 10 — 4.5 2.7 V FEED VIL2 7 — — 1.5 V No local alarm, I/O as an input VIL3 15 — — 0.5 V VSEN VIL4 16 — — 7 V TEST Input Leakage Low I IL1 1, 2, 3 — — -100 nA V DD = 12V, COSC = 12V, STROBE active IIL2 12, 10 — — -100 nA V DD = 12V, VIN = VSS IIL3 15, 16 — — -1 µA V DD = 12V, VIN = VSS ILFD 10 — — -50 µA FEED = -10V Input Leakage High I IH1 1, 2 — — 100 nA V DD = 12V, VIN = VDD, STROBE active IIH2 3, 10, 12 — — 100 nA V DD = 12V, VIN = VDD IHFD 10 — — 50 µA FEED = 22V Note 1: Does not include Q3 emitter current. 2: Not production tested. 3: Production tested at room temperature with guardbanded limits.

DS20002251B-page 6  2010-2016 Microchip Technology Inc. Input Pull-Down Current IPD1 16 0.25 — 10 µA V IN = VDD IPD2 15 0.1 0.25 0.5 µA V IN = VDD IPDIO1 72 0—8 0 µ A V IN = VDD IPDIO2 7—— 1 4 0 µ A V IN = 15V, VDD = 12V Output Off Leakage Low IOZL1 11, 13 — — -1 µA Outputs off, Output = V SS Output Off Leakage High IOZH1 11, 13 — — 1 µA Outputs off, Output = V DD Output High Voltage V OH1 8, 9 5.5 — — V I OH =- 1 6m A , VDD =6 . 5 V Output Low Voltage V OL1 8, 9 — — 1 V I OL =1 6m A , VDD =6 . 5 V VOL2 13 — 0.5 — V I OL =5m A , VDD =6 . 5 V VOL3 11 — — 0.6 V I OL =1 0m A , VDD =6 . 5 V Output Current I IOH1 7 -4 — -16 mA Alarm, V IO =V DD – 2V or VIO =0 V IIODMP 7 5 — — mA At conclusion of local alarm or test, VIO =1 V Low Battery Voltage V LB 5 6.9 7.2 7.5 V Output Voltage V STOF 4 VDD – 0.1 — — V STROBE off, V DD = 12V, IOUT =- 1µ A VSTON 4V DD – 5.25 V DD – 5 V DD – 4.75 V STROBE on, V DD =9 V , IOUT = 100 µA to 500 µA VIREDOF 6 — — 0.1 V IRED off, V DD = 12V, IOUT =1µ A VIREDON 6 2.85 3.1 3.35 V IRED on, V DD = 9V, IOUT = 0 to -6 mA, TA = +25°C Common-Mode Voltage VCM1 1, 2, 3 0.5 — V DD – 2 V Local smoke, push-to-test or chamber test (Note 2) Smoke Comparator Reference VREF —V DD – 3.7 V DD – 3.5 V DD – 3.3 V Internal reference (Note 2) Temperature Coefficient TCST 4 — 0.01 — %/°C STROBE output voltage, VDD = 6V to 12V TCIRED 6 — 0.3 — %/°C IRED output voltage, VDD = 6V to 12V Line Regulation VSTON 4, 5 — -50 — dB STROBE output (vs. V DD), VDD = 6V to 12V VIREDON 6, 5 — -30 — dB IRED output voltage, VDD = 6V to 12V DC ELECTRICAL CHARACTERISTICS(3) (CONTINUED) Typical Application (unless otherwise noted), VSS = 0V Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Note 1: Does not include Q3 emitter current. 2: Not production tested. 3: Production tested at room temperature with guardbanded limits.

 2010-2016 Microchip Technology Inc. DS20002251B-page 7 RE46C165/6/7/8 AC ELECTRICAL CHARACTERISTICS Typical Application (unless otherwise noted), VSS = 0V. Parameter Symbol Test Pin Min. Typ. Max. Units Clocks Conditions Oscillator Time Base (COSC, ROSC) Oscillator Period T POSC 9 9.38 10.42 11.46 ms 1 Operating (Note 1) Oscillator Tolerance T TOLOSC 9 -10 0 10 % 1 Operating LED Indication (LED) LED On Time T ON1 11 9.4 10.4 11.5 ms 1 Operating LED Period T PLED0 11 LED IS NOT ON s — Remote alarm only TPLED1 11 38 43 47 s 4096 Standby, no alarm TPLED2 11 450 500 550 ms 48 Local alarm condition TPLED3 11 9.6 10.7 11.7 s 1024 Timer mode, no local alarm (Note 4) TPLED4 11 225 250 275 ms 24 Timer mode, no local alarm (Note 4) Alarm Memory LED Pulse Train (3x) Off Time T OFLED 11 1.2 1.3 1.5 s 127 Alarm memory set, LED enabled Alarm Memory LED Timer Period TLALED 11 21.5 23.9 26.3 Hours 8257536 Alarm memory set Detection (STROBE, IRED) STROBE On Time T STON 4 9.4 10.4 11.5 ms 1 Smoke test, chamber test IRED On Time T IRON 6 94 104 114 µs 0.01 Operating/DIAG (Note 1) Note 1: TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing. 2: See the timing diagram for Horn Temporal Pattern in Figure 3-2. 3: See the timing diagram for Horn Continuous Pattern in Figure 3-3. 4: During Timer mode, the LED period is 10.5 seconds. The LED period will return to 43 seconds at the conclusion of the Timer mode.

DS20002251B-page 8  2010-2016 Microchip Technology Inc. Smoke Test Period (IRED and STROBE) TPER0 4, 6 9.6 10.7 11.7 s 1024 Standby, no alarm TPER1 4, 6 1.8 2.0 2.2 s 192 RE46C165/7 only Standby, 1 valid smoke sample 4, 6 2.4 2.7 2.9 s 256 RE46C166/8 only Standby, 1 valid smoke sample TPER2 4, 6 0.9 1.0 1.1 s 96 RE46C165/7 only Standby, after 2 consecutive valid smoke samples 4, 6 1.2 1.3 1.5 s 128 RE46C166/8 only Standby, after 2 consecutive valid smoke samples TPER3 4, 6 0.9 1.0 1.1 s 96 RE46C165/7 only Local alarm (3 consecutive valid smoke samples) 4, 6 1.2 1.3 1.5 s 128 RE46C166/8 only Local alarm (3 consecutive valid smoke samples) TPER4 4, 6 300 333 367 ms 32 Push button test TPER5 4, 6 7.2 8.0 8.8 s 768 RE46C165/7 only In remote alarm 4, 6 9.6 10.7 11.7 s 1024 RE46C166/8 only In remote alarm TPER6 4, 6 38 43 47 s 4096 Chamber test or low battery test, no alarm Horn Operation (HORNB, HORNS, FEED) Alarm On Time T HON1 8, 9 450 500 550 ms 48 RE46C165/7 only Local or remote alarm (Note 2) 8, 9 225 250 275 ms 24 RE46C166/8 only Local or remote alarm (Note 3) Alarm Off Time T HOF1 8, 9 450 500 550 ms 48 RE46C165/7 only Local or remote alarm (Note 2) 8, 9 75 83 92 ms 8 RE46C166/8 only Local or remote alarm (Note 3) THOF2 8, 9 1.35 1.50 1.65 s 144 RE46C165/7 only Local or remote alarm (Note 2) Alarm Period T HPER1 8, 9 3.60 4.00 4.40 s 384 RE46C165/7 only Local or remote alarm (Note 2) 8, 9 0.30 0.33 0.37 s 32 RE46C166/8 only Local or remote alarm (Note 3) AC ELECTRICAL CHARACTERISTICS (CONTINUED) Typical Application (unless otherwise noted), VSS = 0V. Parameter Symbol Test Pin Min. Typ. Max. Units Clocks Conditions Note 1: TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing. 2: See the timing diagram for Horn Temporal Pattern in Figure 3-2. 3: See the timing diagram for Horn Continuous Pattern in Figure 3-3. 4: During Timer mode, the LED period is 10.5 seconds. The LED period will return to 43 seconds at the conclusion of the Timer mode.

 2010-2016 Microchip Technology Inc. DS20002251B-page 9 RE46C165/6/7/8 Low Battery or Chamber Fail Horn On Time T HON2 8, 9 9.4 10.4 11.5 ms 1 Low battery or fail chamber test, no alarm Low Battery Horn Off Time THOF3 8, 9 38 43 47 s 4095 Low battery, no alarm Low Battery or Chamber Fail Period THPER2 8, 9 38 43 47 s 4096 Low battery, no alarm Chamber Fail Horn Off Time THOF4 8, 9 291 323 355 ms 31 Failed chamber, no alarm Chamber Fail Pause Off Time THOF5 8, 9 38 42 46 s 4031 Failed chamber, no alarm Push-to-Test Alarm Memory Off Time THOF6 8, 9 216 240 264 ms 23 Alarm memory active, push-to-test Push-to-Test Alarm Memory Period THPER3 8, 9 225 250 275 ms 24 Alarm memory active, push-to-test Interconnect Signal Operation (I/O) I/O Active Delay T IODLY1 7 0.0 0.0 0.0 s 0 Local alarm start to I/O active Remote Alarm Delay T IODLY2 7 0.74 0.99 1.27 s 95 RE46C165/7 only No local alarm, I/O active to alarm 7 0.37 0.57 0.81 s 55 RE46C166/8 only No local alarm, I/O active to alarm I/O Charge Dump Duration T IODMP 7 0.89 0.99 1.09 s 95 RE46C165/7 only At conclusion of local alarm or test 7 1.19 1.32 1.46 s 127 RE46C166/8 only At conclusion of local alarm or test I/O Filter T IOFILT 7 — — 0.30 s 32 Maximum I/O pulse width filtered Hush Timer Operation Hush Timer Period T TPER — 8.1 9.0 9.9 Min 51712 RE46C165/6 only No alarm condition — 1.1 1.2 1.4 Min 7232 RE46C167/8 only No alarm condition AC ELECTRICAL CHARACTERISTICS (CONTINUED) Typical Application (unless otherwise noted), VSS = 0V. Parameter Symbol Test Pin Min. Typ. Max. Units Clocks Conditions Note 1: TPOSC and TIRON are 100% production tested. All other timing is verified by functional testing. 2: See the timing diagram for Horn Temporal Pattern in Figure 3-2. 3: See the timing diagram for Horn Continuous Pattern in Figure 3-3. 4: During Timer mode, the LED period is 10.5 seconds. The LED period will return to 43 seconds at the conclusion of the Timer mode.

DS20002251B-page 10  2010-2016 Microchip Technology Inc. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VDD = 9V, Typical Application (unless otherwise noted), VSS = 0V Parameters Sym. Min. Typ. Max. Units Conditions Temperature Ranges Specified Temperature Range T A -25 — +75 °C Operating Temperature Range T A -25 — +75 °C Storage Temperature Range T STG -55 — +125 °C Thermal Package Resistances Thermal Resistance, 16L-PDIP θJA —7 0— ° C / W Thermal Resistance, 16L-SOIC (150 mil) θJA — 86.1 — °C/W

 2010-2016 Microchip Technology Inc. DS20002251B-page 11 RE46C165/6/7/8

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1.

2.1 High/Normal Gain Capacitor Pins

(C1, C2) The capacitor connected to the C1 pin sets the photo amplifier gain (high) for the push-to-test and chamber sensitivity test. The size of this capacitor will depend on the chamber background reflections. A = 1 + (C1/10), where C1 is expressed in pF. The gain should be <10000. The capacitor connected to the C2 pin sets the photo amplifier gain (normal) during standby. The value of this capacitor will depend on the smoke sensitivity required. A = 1 + (C2/10), where C2 is expressed in pF.

2.2 Photo Diode Input (DETECT)

This input is normally connected to the cathode of an external photo diode operated at zero bias.

2.3 Strobed Detection

Negative Supply (STROBE) Regulated output voltage of V DD – 5, which is active during a test for smoke. This output is the negative side of the photo amplifier reference circuitry.

2.4 Positive Power Supply (V DD)

The VDD pin is the device’s positive power supply input.

2.5 Infrared Emitting Diode Pin (IRED)

Provides a regulated pulsed output voltage pre-driver for the infrared emitter. This output usually drives the base of an NPN transistor.

2.6 Interconnect Pin (I/O)

This bidirectional pin provides the capability to interconnect many detectors in a single system. This pin has an internal pull-down device.

2.7 Horn Brass, Inverted Output (HB)

The HB pin is connected to the metal electrode of a piezoelectric transducer.

2.8 Horn Silver Output Pin (HS)

The HS pin is a complementary output to HB and connects to the ceramic electrode of the piezoelectric transducer. TABLE 2-1: PIN FUNCTION TABLE RE46C165/6/7/8 PDIP, SOIC Symbol Function

1 C1 High-Gain Capacitor Pin

2 C2 Normal Gain Capacitor Pin

3 DETECT Photo Diode Input

4 STROBE Strobed Detection Negative Supply

6 IRED Infrared Emitting Diode Pin

7 IO Interconnect Pin

8 HB Horn Brass, Inverted Output

9 HS Horn Silver Output

10 FEED Horn Feedback Pin

11 LED LED Driver Pin

12 COSC Oscillator Capacitor Input

13 ROSC Oscillator Resistor Drive Low

15 VSEN Hush Timer Sensitivity Pin

16 TEST Test Pin

DS20002251B-page 12  2010-2016 Microchip Technology Inc.

2.9 Horn Feedback Pin (FEED)

Usually, this pin is connected to the feedback electrode through a current-limiting resistor. If not used, this pin must be connected to V DD or VSS. When the horn is enabled, FEED drives the buffered output HS pin and the complementary output HB pin.

2.10 LED Driver Pin (LED)

This pin is an open-drain NMOS output used to drive a visible LED.

2.11 Oscillator Capacitor Input (COSC)

A capacitor connected to this pin, with a parallel resistor, sets the internal clock low time, which is approximately the clock period.

2.12 Oscillator Resistor Drive Low

(ROSC) A resistor between this pin and the COSC pin sets the internal clock high time. This also sets the IRED pulse width.

2.13 Hush Timer Sensitivity Pin (VSEN)

In Timer mode, this input pin can be used to set an external smoke comparator reference.

2.14 TEST Pin

This input is used to invoke two Test modes and the Timer mode. This input has an internal pull-down.

 2010-2016 Microchip Technology Inc. DS20002251B-page 13 RE46C165/6/7/8

3.0 DEVICE DESCRIPTION

3.1 Internal Timing

With the external components specified in the Typical Application section for ROSC and COSC, the internal oscillator has a nominal period of 10 ms. Normally, the analog circuitry is powered down to minimize standby current (typically 4 µA at 9V). Once every 10 seconds, the detection circuitry (normal gain) is powered up for 10 ms. Prior to completion of the 10 ms period, the IRED pulse is active for 100 µs. At the conclusion of the 10 ms period, the photo amplifier is compared to an internal reference to determine the chamber status and latched. If a smoke condition is present, the period to the next detection decreases and additional checks are made. Three consecutive smoke detections will cause the device to go into alarm, and the horn circuit and interconnect will be active. Once every 43 seconds, the status of the battery volt- age is checked. This status is checked and latched at the conclusion of the LED pulse. In addition, once every 43 seconds, the chamber is activated, and using the High-Gain mode (capacitor C1), a check of the chamber is made by amplifying background reflections. If either the low battery or the photo chamber test fails, the horn will chirp for 10 ms every 43 seconds. The oscillator period is determined by the values of R9, R12 and C5 (see the Typical Application figure). The oscillator period is as follows: EQUATION 3-1:

3.2 Smoke Detection Circuit

A comparator compares the photo amplifier output to an internal reference voltage. If the required number of con- secutive smoke conditions is met, the device will go into local alarm and the horn will be active. In local alarm, the C2 gain is internally increased by approximately 10% to provide alarm hysteresis.

3.3 Push-to-Test Operation

If the TEST input pin is activated (VIH4), the smoke detec- tion is sampled at a high rate. The RE46C166/8 devices sample at a period of 330 ms. The RE46C165/7 devices have a first sample delay of up to 330 ms. After one sample, the smoke detection rate increases to once every 250 ms. In this mode, the high-gain capacitor C1 is selected and background reflections are used to simulate a smoke condition. After the required three consecutive detections, the device will go into a local alarm condition. When the TEST input is deactivated (V IL4) and after one clock cycle, the normal gain capacitor C2 is selected. The detection rate continues, once every 330 ms for the RE46C166/8, and every 250 ms while the horn is not sounding for the RE46C165/7. When three consecutive ‘no smoke’ conditions are detected, the device returns to standby timing. Push-to-test will not work while the alarm memory is set. The alarm memory notification will be activated instead.

3.4 LED Pulse

In standby, the LED is pulsed on for 10 ms, every 43 seconds. In a local alarm condition, or the push-to-test alarm, the LED pulse frequency is increased once every 0.5 seconds. In the case of a remote alarm, the LED is not active. In the Timer mode of operation, the LED is pulsed on for 10 ms every 10 seconds.

3.5 Interconnect

The bidirectional I/O pin allows the interconnection of multiple detectors. In a local alarm condition, this pin is driven high immediately through a constant-current source. Shorting this output to ground will not cause excessive current. The I/O is ignored as an input during a local alarm. The I/O pin has a 280k nominal pull-down resistor, so the pin may be left unconnected. The I/O pin also has an NMOS discharge device that is active for 1 second after the conclusion of any type of local alarm. This device helps to quickly discharge any capacitance associated with the interconnect line. If a remote active-high signal is detected, the device goes into remote alarm and the horn will be active. Internal protection circuitry allows for the signaling unit to have a higher supply voltage than the signaled unit, without excessive current draw. The interconnect input has a digital filter that ensures filtering out pulses of up to 300 ms. Filter pulses will be ignored and not affect internal timing of the part. This allows for interconnection to other types of alarms (car- bon monoxide, for example) that may have a pulsed interconnect signal. The remote alarm delay (370 ms to 1.27s) specifies the time from the interconnect going active to sounding the piezo horn alarm. T = TR + TF Where: TR = 0.693 * R12 * C5 TF = 0.693 * R9 * C5

DS20002251B-page 14  2010-2016 Microchip Technology Inc.

3.6 Low Battery Detection

In standby, an internal reference is compared to the voltage divided V DD supply. A low battery status is latched at the conclusion of the LED pulse. The horn will chirp once for 10 ms, every 43 seconds, until the low battery condition no longer exists. The low battery chirp occurs next to the LED pulse. The low battery notification does not sound in a local or remote alarm condition.

3.7 Chamber Fail Detection

In standby, a chamber test is also performed every 43 seconds by switching to the high-gain capacitor C1 and sensing the photo chamber background reflec- tions. Two consecutive chamber test failures will cause the horn to chirp 3 times for 10 ms, spaced 323 ms apart. This will repeat every 42 seconds, as long as a chamber test fail exists. The failed chamber test chirps occur ~21 seconds after the LED pulse in Standby mode (not hush). The chamber fail notification does not sound in a local or remote alarm condition.

3.8 Timer Mode

If resistors, RADJ1 and RADJ2 (see Typical Application figure), are in place and a high-to-low transition occurs on the TEST input, the device enters a Timer mode (10 minutes maximum for RE46C165/6 devices, 1 minute maximum for RE46C167/8). In this mode, the smoke comparator reference is switched from the internal V DD – 3.5V reference to the voltage that appears on VSEN. This allows the sensitivity to be modified for the duration of the timer period. High-gain operations (push-to-test and chamber test) always use the internal V DD – 3.5V reference. The chamber test is performed in Timer mode. If VSEN is left unconnected or tied to V SS, the Hush Timer mode operation is inhibited. If the smoke level causes the reduced sensitivity set point to be exceeded during this timer period, the unit will go into a local alarm condition, the horn will sound and the Timer mode is cancelled. If an external only alarm occurs during the Timer mode, the Timer mode is cancelled. If the test button is pushed in a Standby Reduced Sensitivity mode, the unit is tested normally. Upon release of the test button, the 10 minute maximum Timer mode counter is reset and restarted.

3.9 Alarm Memory

If a detector has entered a local alarm, when exiting that local alarm, the alarm memory latch is set. Initially, the LED can be used to visually identify any unit that had previously been in a local alarm condition. The LED will flash 3 times, spaced 1.3 seconds apart. This pattern will repeat every 43 seconds. The duration of the flash is 10 ms. In order to conserve battery power, this visual indication will stop after a period of 24 hours. The user will always be able to identify a unit with an active alarm memory by pressing the push-to-test but- ton. When this button is active, the horn will chirp and the LED will pulse on for 10 ms, every 250 ms. The push-to-test alarm will not activate until the alarm memory is reset. If the alarm memory condition is set, any time the push-to-test button is pressed and then released, the alarm memory latch is reset. The initial 24 hour visual indication is not displayed if a low battery condition exits.

3.10 Diagnostic Mode

In addition to the normal function of the TEST input, a special Diagnostic mode is available to calibrate and test the smoke detector. Taking the TEST pin below V SS, and sourcing ~200 µA out of the pin for 1 clock cycle, will enable the Diagnostic mode. In the Diagnos- tic mode, some of the pin functions are redefined. Refer to the following Table 3-1 for redefined pin functions in the Diagnostic mode. In addition, in this mode, STROBE is always enabled and the IRED is pulsed at the clock rate of 10 ms nominal.

 2010-2016 Microchip Technology Inc. DS20002251B-page 15 RE46C165/6/7/8 FIGURE 3-1: RE46C165/6/7/8 Timing Diagram – Standby, Low Battery, Chamber Fail. TABLE 3-1: DIAGNOSTIC MODE PIN FUNCTION Pin Name Pin Number Function IO 7 Disabled as an output. A high on this pin directs the photo amplifier output to pin C1 or C2, determined by the level on VSEN. Amplification occurs during the IRED active time. VSEN 15 If I/O is high, then this pin controls the gain capacitor that is used. If VSEN is low, the normal gain is selected and the photo amplifier output appears on C1. If VSEN is high, high gain is selected and the photo amplifier output is on C2. FEED 10 If VSEN is low, then taking this input high will enable hysteresis, which is a nominal 10% gain increase in Normal Gain mode. COSC 12 If desired, this pin can be driven by an external clock. HORNB 8 This pin becomes the smoke integrator output. A high level indicates that an alarm condition has been detected. LED 11 The LED pin is used as a low battery indicator. For V DD above the low battery thresh- old, the open-drain NMOS is off. If VDD falls below the threshold, the NMOS turns on. TSTON TPER0 STROBE TIRON IRED TPLED1 LED Low Supply Test Failure LED STROBE Low Battery Test Low BatteryTest Low BatteryWarning Chirp THOF3 Horn THPER2 TPER6 Chamber Fail Test Failure STROBE Chamber Fail Test THON2 THOF4 THOF5 Horn

DS20002251B-page 16  2010-2016 Microchip Technology Inc. FIGURE 3-2: RE46C165/6/7/8 Timing Diagram – Local and Remote Alarm. Local Alarm Timing TPER1 TPER2 TPER3 STROBE IRED TPLED2 TPLED2 LED Push To Test Alarm Timing TEST T PE R 4 TPER4 STROBE IRED No Alarm Local Alar m No Alar m Horn Patterns TIO DLY2 T HON1 THOF1 T HOF2 Temporal Horn Continuous Horn TIODLY 2 THON1 THOF1 Interconnect Timing TIO DMP TIODLY1 IO as output IO as input TIOFI LT TPER5 STROBE No Alarm Remote/External Alarm No Alarm Notes: 1. Smoke is not sampled when the horn is active. 2. Low battery warning chirp is suppressed in local or remote alarm 3. IO Dump active only in local alarm, inactive if external alarm

DS20002251B-page 18  2010-2016 Microchip Technology Inc. NOTES:

 2010-2016 Microchip Technology Inc. DS20002251B-page 19 RE46C165/6/7/8

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 1603256 RE46C165-V/P^^ 16-Lead SOIC (150 mil.) Example 1603256 RE46C165 XXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN XXXXXXXXXXXXX XXXXXXXXXXXXX YYWWNNN V/SL

DS20002251B-page 20  2010-2016 Microchip Technology Inc. /g20/g25/g16/g47/g72/g68/g71/g3/g51/g79/g68/g86/g87/g76/g70/g3/g39/g88/g68/g79/g3/g44/g81/g16/g47/g76/g81/g72/g3/g11/g51/g12/g3/g177/g3/g22/g19/g19/g3/g80/g76/g79/g3/g37/g82/g71/g92/g3/g62/g51/g39/g44/g51/g64 /g49/g82/g87/g72/g86/g29 /g20/g17 /g51/g76/g81/g3/g20/g3/g89/g76/g86/g88/g68/g79/g3/g76/g81/g71/g72/g91/g3/g73/g72/g68/g87/g88/g85/g72/g3/g80/g68/g92/g3/g89/g68/g85/g92/g15/g3/g69/g88/g87/g3/g80/g88/g86/g87/g3/g69/g72/g3/g79/g82/g70/g68/g87/g72/g71/g3/g90/g76/g87/g75/g76/g81/g3/g87/g75/g72/g3/g75/g68/g87/g70/g75/g72/g71/g3/g68/g85/g72/g68/g17 /g21/g17 /g134/g3/g54/g76/g74/g81/g76/g73/g76/g70/g68/g81/g87/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g17 /g22/g17 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g39/g3/g68/g81/g71/g3/g40/g20/g3/g71/g82/g3/g81/g82/g87/g3/g76/g81/g70/g79/g88/g71/g72/g3/g80/g82/g79/g71/g3/g73/g79/g68/g86/g75/g3/g82/g85/g3/g83/g85/g82/g87/g85/g88/g86/g76/g82/g81/g86/g17/g3/g48/g82/g79/g71/g3/g73/g79/g68/g86/g75/g3/g82/g85/g3/g83/g85/g82/g87/g85/g88/g86/g76/g82/g81/g86/g3/g86/g75/g68/g79/g79/g3/g81/g82/g87/g3/g72/g91/g70/g72/g72/g71/g3/g17/g19/g20/g19/g5/g3/g83/g72/g85/g3/g86/g76/g71/g72/g17 /g23/g17 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g76/g81/g74/g3/g68/g81/g71/g3/g87/g82/g79/g72/g85/g68/g81/g70/g76/g81/g74/g3/g83/g72/g85/g3/g36/g54/g48/g40/g3/g60/g20/g23/g17/g24/g48/g17 /g37/g54/g38/g29 /g37/g68/g86/g76/g70/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g17/g3/g55/g75/g72/g82/g85/g72/g87/g76/g70/g68/g79/g79/g92/g3/g72/g91/g68/g70/g87/g3/g89/g68/g79/g88/g72/g3/g86/g75/g82/g90/g81/g3/g90/g76/g87/g75/g82/g88/g87/g3/g87/g82/g79/g72/g85/g68/g81/g70/g72/g86/g17 /g49/g82/g87/g72/g29/g41/g82/g85/g3/g87/g75/g72/g3/g80/g82/g86/g87/g3/g70/g88/g85/g85/g72/g81/g87/g3/g83/g68/g70/g78/g68/g74/g72/g3/g71/g85/g68/g90/g76/g81/g74/g86/g15/g3/g83/g79/g72/g68/g86/g72/g3/g86/g72/g72/g3/g87/g75/g72/g3/g48/g76/g70/g85/g82/g70/g75/g76/g83/g3/g51/g68/g70/g78/g68/g74/g76/g81/g74/g3/g54/g83/g72/g70/g76/g73/g76/g70/g68/g87/g76/g82/g81/g3/g79/g82/g70/g68/g87/g72/g71/g3/g68/g87/g3 /g75/g87/g87/g83/g29/g18/g18/g90/g90/g90/g17/g80/g76/g70/g85/g82/g70/g75/g76/g83/g17/g70/g82/g80/g18/g83/g68/g70/g78/g68/g74/g76/g81/g74 /g56/g81/g76/g87/g86/g44/g49/g38/g43/g40/g54 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g3/g47/g76/g80/g76/g87/g86 /g48/g44/g49 /g49/g50/g48 /g48/g36/g59 /g49/g88/g80/g69/g72/g85/g3/g82/g73/g3/g51/g76/g81/g86/g49 /g20/g25 /g51/g76/g87/g70/g75 /g72 /g17/g20/g19/g19/g3/g37/g54/g38 /g55/g82/g83/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g36 /g177 /g177 /g17/g21/g20/g19 /g48/g82/g79/g71/g72/g71/g3/g51/g68/g70/g78/g68/g74/g72/g3/g55/g75/g76/g70/g78/g81/g72/g86/g86 /g36/g21 /g17/g20/g20/g24 /g17/g20/g22/g19 /g17/g20/g28/g24 /g37/g68/g86/g72/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g36/g20 /g17/g19/g20/g24 /g177 /g177 /g54/g75/g82/g88/g79/g71/g72/g85/g3/g87/g82/g3/g54/g75/g82/g88/g79/g71/g72/g85/g3/g58/g76/g71/g87/g75 /g40 /g17/g21/g28/g19 /g17/g22/g20/g19 /g17/g22/g21/g24 /g48/g82/g79/g71/g72/g71/g3/g51/g68/g70/g78/g68/g74/g72/g3/g58/g76/g71/g87/g75 /g40/g20 /g17/g21/g23/g19 /g17/g21/g24/g19 /g17/g21/g27/g19 /g50/g89/g72/g85/g68/g79/g79/g3/g47/g72/g81/g74/g87/g75 /g39 /g17/g26/g22/g24 /g17/g26/g24/g24 /g17/g26/g26/g24 /g55/g76/g83/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g47 /g17/g20/g20/g24 /g17/g20/g22/g19 /g17/g20/g24/g19 /g47/g72/g68/g71/g3/g55/g75/g76/g70/g78/g81/g72/g86/g86 /g70 /g17/g19/g19/g27 /g17/g19/g20/g19 /g17/g19/g20/g24 /g56/g83/g83/g72/g85/g3/g47/g72/g68/g71/g3/g58/g76/g71/g87/g75 /g69/g20 /g17/g19/g23/g24 /g17/g19/g25/g19 /g17/g19/g26/g19 /g47/g82/g90/g72/g85/g3/g47/g72/g68/g71/g3/g58/g76/g71/g87/g75 /g69 /g17/g19/g20/g23 /g17/g19/g20/g27 /g17/g19/g21/g21 /g50/g89/g72/g85/g68/g79/g79/g3/g53/g82/g90/g3/g54/g83/g68/g70/g76/g81/g74/g3/g3/g134 /g72/g37 /g177 /g177 /g17/g23/g22/g19 N E1NOTE 1 D 12 3 A A1 b1 b e L E eB c /g48/g76/g70/g85/g82/g70/g75/g76/g83 /g55/g72/g70/g75/g81/g82/g79/g82/g74/g92 /g39/g85/g68/g90/g76/g81/g74 /g38/g19/g23/g16/g19/g20/g26/g37

 2010-2016 Microchip Technology Inc. DS20002251B-page 21 RE46C165/6/7/8 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS20002251B-page 22  2010-2016 Microchip Technology Inc. Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

 2010-2016 Microchip Technology Inc. DS20002251B-page 23 RE46C165/6/7/8 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS20002251B-page 24  2010-2016 Microchip Technology Inc. NOTES:

 2010-2016 Microchip Technology Inc. DS20002251B-page 25 RE46C165/6/7/8 APPENDIX A: REVISION HISTORY Revision B (March 2016)

Removed the 16-Lead SOIC (300 mil.) package reference from Temperature Characteristics table, from Section 4.1 “Package Marking Information” and from the Product Identification System section.
Updated Package Drawings for 16-Lead SOIC (150 mil.) package in Section 4.0 “Packaging Information”. Revision A (May 2010)
Original release of this document.

DS20002251B-page 26  2010-2016 Microchip Technology Inc. NOTES:

 2010-2016 Microchip Technology Inc. DS20002251B-page 27 RE46C165/6/7/8 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. /X PackageDevice Device: RE46C165: CMOS Photoelectric Smoke Detector ASIC RE46C165T: CMOS Photoelectric Smoke Detector ASIC (Tape and Reel, SOIC only) RE46C165/7: CMOS Photoelectric Smoke Detector ASIC RE46C165/7T: CMOS Photoelectric Smoke Detector ASIC (Tape and Reel, SOIC only) RE46C166/8: CMOS Photoelectric Smoke Detector ASIC RE46C166/8T: CMOS Photoelectric Smoke Detector ASIC (Tape and Reel, SOIC only) RE46C165/6: CMOS Photoelectric Smoke Detector ASIC RE46C165/6T: CMOS Photoelectric Smoke Detector ASIC (Tape and Reel, SOIC only) Tape and Reel Option: T = Tape and Reel (1) Package: E S = Plastic Dual In-Line, 300 mil. Body, 16-Lead (PDIP) = Small Plastic Outline – Narrow, 3.90 mm Body, 16-Lead (SOIC) Examples: a) RE46C165E16F: 16LD PDIP Package, Lead-Free b) RE46C165S16F: 16LD SOIC Package, Lead-Free c) RE46C165S16TF: 16LD SOIC Package, Tape and Reel, Lead-Free a) RE46C166E16F: 16LD PDIP Package, Lead-Free b) RE46C166S16F: 16LD SOIC Package, Lead-Free c) RE46C166S16TF: 16LD SOIC Package, Tape and Reel, Lead-Free a) RE46C167E16F: 16LD PDIP Package, Lead-Free b) RE46C167S16F: 16LD SOIC Package, Lead-Free c) RE46C167S16TF: 16LD SOIC Package, Tape and Reel, Lead-Free a) RE46C168E16F: 16LD PDIP Package, Lead-Free b) RE46C168S16F: 16LD SOIC Package, Lead-Free c) RE46C168S16TF: 16LD SOIC Package, Tape and Reel, Lead-Free Note 1: Tape and Reel identifier only appears in the catalog part number description. This identi- fier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. XX Number of Pins X(1) Tape and Reel X Lead Free

DS20002251B-page 28  2010-2016 Microchip Technology Inc. NOTES:

 2010-2016 Microchip Technology Inc. DS20002251B-page 29 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights unless otherwise stated. Trademarks The Microchip name and logo, the Microchip logo, AnyRate, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. ClockWorks, The Embedded Control Solutions Company, ETHERSYNCH, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi, motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker, Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2010-2016, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-5224-0434-7 Note the following details of the code protection feature on Microchip devices:

Microchip products meet the specification cont ained in their particular Microchip Data Sheet.
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are co mmitted to continuously improvin g the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT S YSTEM CERTIFIED BY DNV == ISO/TS 16949 ==

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Product Information

RE46C167 specifications and overview.

Summary

Alarm Memory 07/14/15

Description

Alarm Memory 07/14/15

Source title RE46C167 Datasheet(PDF) - Microchip Technology

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