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Technical content

Features

  • Pin Selectable Horn Patterns
  • Alarm Memory
  • Sensitivity Control Timer: - 8 minute Timer for RE46C162 - 1 minute Timer for RE46C163
  • >1500V ESD Protection (HBM) on All Pins
  • Guard Outputs for Ion Detector Input
  • ±0.75 pA Detect Input Current
  • Internal Reverse Battery Protection
  • Low Quiescent Current Consumption (<6.5 µA)
  • I/O Filter and Charge Dump
  • Internal Low Battery Detection
  • Power-up Low Battery Test
  • Interconnect up to 66 Detectors
  • RoHS Compliant, Lead Free Packaging

Description

The RE46C162/163 devices are low-power, CMOS ionization type, smoke detector ICs. With few external components, these circuits will provide all the required features for an ionization type smoke detector. An internal oscillator strobes power to the smoke detection circuitry for 10.5 ms every 1.67 seconds to keep standby current to a minimum. A check for a low battery condition is performed every 40 seconds when in standby. The temporal horn pattern supports the NFPA 72 emergency evacuation signal. An interconnect pin allows multiple detectors to be connected so when one unit alarms, all units will sound. A charge dump feature will quickly discharge the inter- connect line when exiting a local alarm. The intercon- nect input is also digitally filtered. An internal timer allows for a single button, push-to-test to be used for a reduced sensitivity mode. An alarm memory feature allows the user to determine if the unit has previously entered a local alarm condition. Utilizing low-power CMOS technology, the RE46C162/163 devices are designed for use in smoke detectors that comply with Underwriters Laboratory Specification UL217 and UL268. Package Types RE46C162/163 PDIP TSTART 1 IO TONE TSTROBE LED VDD RBIAS FEED GUARD2 DETECT GUARD1 VSEN OSCAP HS HB VSS CMOS Ionization Smoke Detector ASIC with Interconnect, Timer Mode and Alarm Memory

DS22245A-page 2  2010 Microchip Technology Inc. Functional Block Diagram Logic and Timing Bias and Power Reset Oscillator Reference TONE (3) VDD(6) TSTART (1) VSEN (13) GUARD1 (14) DETECT (15) GUARD2 (16) VSS(9) 1100K 340K 760K IO (2) FEED (8) HS (11) LED (5) TSTROBE (4) RBIAS (7) OSCAP (12) HB (10) Smoke Comparator Low Battery Comparator Guard Amp

 2010 Microchip Technology Inc. DS22245A-page 3 RE46C162/163 Typical Applications Note 1: Select R5 and R6 for the correct level to test the ion chamber. The voltage level on pin 1 (TSTART) must be greater than the VIH level to initiate the timer. Pin 1 has an internal 180K nominal pull down which must be considered. 2: Select R9 to reduce sensitivity during the timer mode. 3: R3, R4 and C1 are typical values and may be adjusted to maximize sound pressure. 4: C2 should be located as close as possible to the device power pins. 5: Route the pin 8 PC board trace away from pin 7 to avoid coupling. 6: R8 should be at least 1.5K. RE46C162 Typical Application – Temporal Horn Pattern Battery 1µ F 8.2M 390 1.5K 100 To Other Units 100K TEST and HUSH R6 68K 220K 1.5M .001 µF .1 µF Dled TSTART TONE IO LED VDD RBIAS TSTROBE FEED GUARD2 GUARD1 DETECT OSCAP HS HB VSEN VSS

DS22245A-page 4  2010 Microchip Technology Inc. Note 1: Select R5 and R6 for the correct level to test the ion chamber. The voltage level on pin 1 (TSTART) must be greater than the VIH level to initiate the timer. Pin 1 has an internal 180K nominal pull down which must be considered. 2: Select R9 to reduce sensitivity during the timer mode. 3: R3, R4 and C1 are typical values and may be adjusted to maximize sound pressure. 4: C2 should be located as close as possible to the device power pins. 5: Route the pin 8 PC board trace away from pin 7 to avoid coupling. RE46C162 Typical Application – 2/3 Duty Cycle Continuous Tone Horn Pattern Battery 1µ F 8.2M 390 100 To Other Units 100K TEST and HUSH R6 68K 220K 1.5M .001 µF .1 µF Dled TSTART TONE IO LED VDD RBIAS TSTROBE FEED GUARD2 GUARD1 DETECT OSCAP HS HB VSEN VSS

 2010 Microchip Technology Inc. DS22245A-page 5 RE46C162/163

1.0 ELECTRICAL

Absolute Maximum Ratings† † Notice: Stresses above those listed under “Maximum rat- ings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V Parameter Symbol Test Pin Min Typ Max Units Conditions Supply Voltage V DD 66 — 1 2 V O p e r a t i n g Supply Current I DD1 6 — 5 6.5 µA RBIAS = 8.2 MW, OSCAP = .1 µF IDD2 6 — — 9 µA RBIAS = 8.2 MW, OSCAP = .1 µF; VDD = 12V Input Voltage High V IH1 3,8 6.2 4.5 — V Note 2 VIH2 2 3 — — V No local alarm, I/O as an input VIH3 14 . 5 —— V Input Voltage Low V IL1 3,8 — 4.5 2.7 V Note 2 VIL2 2 — — 1 V No local alarm, I/O as an input VIL3 1— — 2 . 5 V Input Leakage Low IL DET1 15 — — -0.75 pA V DD = 9V, DETECT = VSS, 0-40% RH ILDET2 15 — — -1.50 pA V DD = 9V, DETECT = VSS, 85% RH Note 1 ILFD 8 — — -50 µA FEED = -10V ILTONE 3— — - 1 0 0 n A T O N E = V SS Input Leakage High IH DET1 15 — — 0.75 pA V DD = 9V, DETECT = VDD, 0-40% RH IHDET2 15 — — 1.50 pA V DD = 9V, DETECT = VDD, 85% RH Note 1 IHFD 8 — — 50 µA FEED = 22V IIOL2 2 — — 150 µA No alarm, V IO = 15V IHTONE 3 — — 100 nA TONE = V DD Output Off Leakage High I IOHZ 4,5 — — 1 µA Outputs off Input Pull Down Current I PD1 1 20 50 80 µA TSTART = 9V Output High Voltage V OH1 10,11 6.3 — — V I OH = -16 mA, VDD = 7.2V Note 1: Sample test only. 2: Not 100% production tested. 3: Production test at room with temperature guard banded limits.

DS22245A-page 6  2010 Microchip Technology Inc. Output Low Voltage V OL1 10,11 — — .9 V I OL = 16 mA, VDD = 7.2V VOL2 4— — . 5 V I OL = 500 µA VOL3 5— —1 V I OL = 10 mA, VDD = 7.2V Output Current I IOL1 2 25 — 60 µA No alarm, V IO = VDD -2V IIOH1 2 -4 — -16 mA Alarm, V IO = VDD -2V or VIO = 0V IIODMP 2 5 — — mA At conclusion of local alarm or test, VIO = 1V Low Battery Voltage V LB 6 7.2 7.5 7.8 V T A = -10 to +60ºC, Note 3 Internal Sensitivity Set Voltage VSET1 13 48.5 50 51.5 %V DD Offset Voltage VG OS1 14,15 -50 — 50 mV Guard amplifier VGOS2 15,16 -50 — 50 mV Guard amplifier VGOS3 13,15 -50 — 50 mV Smoke comparator Common Mode Voltage V CM1 14,15 2 — V DD- V Guard amplifier, Note 2 VCM2 13,15 .5 — V DD-2 V Smoke comparator, Note 2 Output Impedance Z OUT 14,16 — 10 — kW Guard amplifier outputs, Note 2 Hysteresis V HYS 13 90 130 170 mV No alarm to alarm condition DC ELECTRICAL CHARACTERISTICS (CONTINUED) OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V Parameter Symbol Test Pin Min Typ Max Units Conditions Note 1: Sample test only. 2: Not 100% production tested. 3: Production test at room with temperature guard banded limits. AC ELECTRICAL CHARACTERISTICS OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V. Parameter Symbol Test Pin Min Typ Max Units Conditions Oscillator Period T PER1 12 1.34 1.67 2 s No alarm condition TPER2 12 37.5 41.7 45.8 ms Alarm condition Oscillator Pulse Width T PW 5 9.4 10.5 12.9 ms Operating LED On Time T LON 5 9.4 10.5 12.9 ms Operating LED Off Time T LOF1 5 32 40 48 s Standby, no alarm TLOF2 5 .9 1 1.1 s Alarm condition TLOF3 5 8 10 12 s Timer mode, no alarm TLOF4 5 2.66 3.33 4 s Alarm memory LED pulse spacing TLOF5 5 26 33.3 40 s Alarm memory LED off time between pulse train Note 1: See timing diagram for horn temporal and non-temporal patterns. 2: TPER1,TPER2 and TPW are 100% production tested. All other timing is verified by functional testing.

 2010 Microchip Technology Inc. DS22245A-page 7 RE46C162/163 Horn On Time T HON1 10,11 450 500 550 ms Operating, alarm condition, Note 1, TONE = High THON2 10,11 9.4 10.5 12.9 ms Low battery, no alarm or PTT in alarm memory THON3 10,11 150 167 183 ms Operating, alarm condition, Note 1, TONE = Low Horn Off Time T HOF1 10,11 450 500 550 ms Operating, alarm condition, Note 1, TONE = High THOF2 10,11 1.35 1.5 1.65 s Operating, alarm condition, Note 1, TONE = High THOF3 10,11 75 83 92 ms Operating, alarm condition, Note 1, TONE = Low THOF4 10,11 32 40 48 s Low battery, no alarm THOF5 10,11 216 240 264 ms PTT in alarm memory I/O Charge Dump Duration TIODMP 2 1.34 1.67 2.0 s At conclusion of local alarm or test I/O Delay T IODLY1 2 — 3 — s From start of local alarm to I/O active I/O Filter T IOFILT 2 — — 450 ms I/O as input, no local alarm Remote Alarm Delay T IODLY2 2 .450 — 2.75 s No local alarm, I/O as input, from I/O active to horn active Timer Period RE46C162 TTPER 468 1 0 M i n N o a l a r m RE46C163 44 0 5 0 6 0 s N o a l a r m Alarm Memory Visual Indicator Period TAMTPER 5 19.2 24 28.8 Hour No alarm, alarm memory TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, Parameters Sym Min Typ Max Units Conditions Temperature Ranges Operating Temperature Range T A -10 — +60 °C Storage Temperature Range T STG -55 — +125 °C Thermal Package Resistances Thermal Resistance, 16L-PDIP θJA —7 0— ° C / W AC ELECTRICAL CHARACTERISTICS (CONTINUED) OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V. Parameter Symbol Test Pin Min Typ Max Units Conditions Note 1: See timing diagram for horn temporal and non-temporal patterns. 2: TPER1,TPER2 and TPW are 100% production tested. All other timing is verified by functional testing.

DS22245A-page 8  2010 Microchip Technology Inc. NOTES:

 2010 Microchip Technology Inc. DS22245A-page 9 RE46C162/163

2.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 2-1. TABLE 2-1: PIN FUNCTION TABLE RE46C162/163 Name Description PDIP, SOIC

1 TSTART This input is used to invoke the push-to-test alarm, alarm memory indication,

and the timer mode. This input has an internal pull-down.

2 I/O This bidirectional pin provides the capability to interconnect many detectors in a

single system. This pin has an internal pull-down.

3 TONE This pin selects the NFPA72 horn tone (high) or the 2/3 duty cycle continuous

tone (low). 4 TSTROBE This pin is strobed on with the internal clock in timer mode. A resistor connected to this pin is used to modify the detector sensitivity for the timer period. 5 LED Open drain NMOS output used to drive a visible LED. 6V DD Connect to the positive supply voltage. 7 RBIAS A resistor connected between this pin and V DD sets the internal bias current. 8 FEED Usually connected to the feedback electrode through a current limiting resistor. If not used, this pin must be connected to VDD or VSS. 9V SS Connect to the negative supply voltage. 10 HB This pin is connected to the metal electrode of a piezoelectric transducer.

11 HS HS is a complementary output to HB and connects to the ceramic electrode of

the piezoelectric transducer. 12 OSCAP A capacitor connected between this pin and V SS sets the oscillator timing.

13 VSEN This pin can be used to modify the set point for the smoke comparator by use of

external resistors to VDD or VSS. 14 GUARD1 Output of the guard amplifier. 15 DETECT Connect to the collector electrode (CEV) of the ion smoke chamber. 16 GUARD2 Output of the guard amplifier.

DS22245A-page 10  2010 Microchip Technology Inc. NOTES:

 2010 Microchip Technology Inc. DS22245A-page 11 RE46C162/163

3.0 DEVICE DESCRIPTION

3.1 Internal Timing

With external components as indicated on the application drawing, the period of the oscillator is nominally 1.67 seconds in standby. Every 1.67 seconds, the detection circuitry is powered up for 10.5 ms and the status of the smoke comparator is latched. In addition, every 40 seconds the LED driver is turned on for 10.5 ms and the status of the low battery comparator is latched. The smoke comparator status is not checked during the low battery test, during the low battery horn warning chirp, or when the horn is on due to an alarm condition. If an alarm condition is detected, the oscillator period increases to 41.7 ms. Due to the low current used in the oscillator, the capacitor on the OSCAP pin should be a low leakage type.

3.2 Smoke Detection Circuit

The smoke comparator compares the ionization chamber voltage to a voltage derived from a resistor divider across V DD. This divider voltage is available externally on the VSEN pin. When smoke is detected, this voltage is internally increased by 130 mV nominal to provide hysteresis and make the detector less sensitive to false triggering. The VSEN pin can be used to modify the internal set point for the smoke comparator by use of external resistors to V DD or VSS. Nominal values for the internal resistor divider are indicated on the block diagram. These internal resistor values can vary by up to ±20%, but the resistor matching should be <2% on any one device. The transmission switch on VSEN prevents any interaction from the external adjustment resistors. The guard amplifier and outputs are always active and will be within 50 mV of the DETECT input to reduce surface leakage. The guard outputs also allow for measurement of the DETECT input without loading the ionization chamber.

3.3 Low Battery Detection

An internal reference is compared to the voltage- divided V DD supply. The battery can be checked under load via the LED low side driver output since low battery status is latched at the end of the 10.5 ms LED pulse.

3.4 LED Pulse

The LED is pulsed on for 10.5 ms every 40s in standby. In alarm, the LED is pulsed on for 10.5 ms every 1 second.

3.5 Interconnect

The I/O pin provides a capability common to many detectors in a single system. If a single unit goes into alarm, the I/O pin is driven high. This high signal causes the interconnected units to alarm. The LED flashes every 1s for 10.5 ms on the signaling unit and is inhibited on the units that are in alarm due to the I/O signal. An internal sink device on the I/O pin helps to discharge the interconnect line. This charge dump device is active for 1 clock cycle after the unit exits the alarm condition (1.67s). The interconnect input has a 500 ms nominal digital filter. This allows for interconnection to other types of alarms (carbon monoxide for example) that may have a pulsed interconnect signal.

3.6 Testing

At power-up all internal registers are reset. The low battery set point can be tested at power-up by holding FEED and OSCAP low at power-up. HB will change state as V DD passes through the low battery set point. By holding the OSCAP pin low, the internal power strobe is active. Functional testing can be accelerated by driving OSCAP with a 4 kHz square wave; however, the 10.5 ms strobe period must be maintained for proper operation of the analog circuitry. Refer to Figure 3-1 timing diagram.

3.7 Timer Mode

The transition of the TSTART pin from a high to low level initiates a timer period (10 minutes maximum for RE46C162, and 1 minute maximum for RE46C163). During this timer period, the open drain NMOS on the TSTROBE pin is strobed simultaneously with the inter- nal clock. A resistor connected to this pin and the VSEN pin is used to modify the detector sensitivity for the timer period. During the timer period, the LED flashes for 10.5 ms every 10 seconds. If the smoke level exceeds the reduced sensitivity set point during the timer period, the unit will go into a local alarm condition, the horn will sound and the timer mode is cancelled. If an external only alarm occurs during the timer mode, the timer mode is cancelled. If the test button is pushed in a standby, reduced sensitivity mode, the unit is tested normally. Upon release of the test button, the timer mode counter is reset and restarted.

DS22245A-page 12  2010 Microchip Technology Inc.

3.8 Alarm Memory

If a detector has entered a local alarm, once it exits the local alarm, the alarm memory latch is set. Initially the LED can be used to visually identify any unit that had previously been in a local alarm condition. The LED will flash 3 times spaced 3.3 seconds apart. This pattern will repeat every 40 seconds. The duration of the flash is 10.5 ms. In order to conserve battery power, this visual indication will stop after a period of 24 hours. The user will still be able to identify a unit with an active alarm memory by pressing the push-to-test button. When the push-to-test button is active, the horn will chirp for 10.5 ms every 250 ms. If the alarm memory condition is set, any time the push- to-test button is pressed and then released, the alarm memory latch is reset. The initial 24 hour visual indication is not displayed if a low battery condition exits.

3.9 Tone Select

The TONE pin selects the NFPA72 temporal horn tone (high), or the 2/3 duty cycle continuous tone (low). If this pin is externally connected high, use a current limiting resistor of at least 1.5K from TONE pin to V DD.

3.10 Reverse Battery Protection

The RE46C162/163 internally limits the current from VSS to VDD in the event of accidental polarity reversal. If an input is connected to V DD it should be done through a resistance of at least 1.5K to limit the reverse current through this path. FIGURE 3-1: Timing Diagram – Standby, Local Alarm, Low Battery. Standby Mode; No Low Battery; No Alarm Alar m; No Low Battery Al arm; Low Battery Oscillator TPER1 TPW TPER2 Internal Clock

24 Clock Cycles (40 S)

See Figure Below for Complete Horn Cycle TIODLY 1 IO (Pin 2) as Output Timing not same scale as above IO Char ge Dump TIODMP TIOFILT IO ( Pin 2) as Input LED supr essed in remote alarm mode TIODLY2 Horn Start of horn temporal pattern i s not synchroni zed to an external alar m Horn pattern not self completing for external alarm,see timing below for complete horn c ycle Internal Clock Notes: 1. Smoke is not sampled when the horn is active. Horn cycle is self completing in local alarm. 2. Low battery warning chirp is suppressed in local or remote alarm 3. IO Dump active only in local alarm, inactive if external alarm T HON1 THOF 1 Complete Temporal Horn Pattern THON3 THOF3 Non-Temporal Horn Pattern THO F2

24 Clock Cycles (1S)

P in 15 > Pin 13 Pin 15 > Pin 13Pin 13 > Pi n 15; 130mV Level Shift on Pi n 13 No Alarm; Low Battery

DS22245A-page 14  2010 Microchip Technology Inc. NOTES:

 2010 Microchip Technology Inc. DS22245A-page 15 RE46C162/163

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 1003256 RE46C162-V/PXXXXXXXXXXXXXX XXXXXXXXXXXXXX YYWWNNN

DS22245A-page 16  2010 Microchip Technology Inc. /g49/g82/g87/g72/g86/##58Hb981034091b194e41ef5193e7127dfd3 /g56/g81/g76/g87/g86/g44/g49/g38/g43/g40/g54 /g50/g89/g72/g85/g68/g79/g79/;#23#23#23/g47/g72/g81/g74/g87/g75 /g39 /;#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23/##4FHabe68123f3cb4e14e0d59c97044fedf7/##43Hd27e308598cf1f8bcf9e336036f3f448/##49H7d5c40f4f2638829db6b707b7e9400a3 /;#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23/##4FHabe68123f3cb4e14e0d59c97044fedf7/##49H7d5c40f4f2638829db6b707b7e9400a3/##49H7d5c40f4f2638829db6b707b7e9400a3 /;#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23#23/##4FHabe68123f3cb4e14e0d59c97044fedf7/##4FHabe68123f3cb4e14e0d59c97044fedf7/##49H7d5c40f4f2638829db6b707b7e9400a3 N E1NOTE 1 D 123 A A1 b1 b e L E eB c

 2010 Microchip Technology Inc. DS22245A-page 17 RE46C162/163 APPENDIX A: REVISION HISTORY Revision A (March 2010)

  • Original Release of this Document.

DS22245A-page 18  2010 Microchip Technology Inc. NOTES:

 2010 Microchip Technology Inc. DS22245A-page 19 RE46C162/163 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . Device RE46C162: CMOS Ionization Smoke Detector RE46C163: CMOS Ionization Smoke Detector Package E = Plastic Dual In-Line, 300 mil. Body, 16-Lead (PDIP) Examples: a) RE46C162E16F: 16LD PDIP Package. b) RE46C163E16F: 16LD PDIP Package. PART NO. /X PackageDevice XX Number of Pins

DS22245A-page 20  2010 Microchip Technology Inc. NOTES:

 2010 Microchip Technology Inc. DS22245A-page 21 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2010, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-60932-126-0 Note the following details of the code protection feature on Microchip devices:

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  • Microchip is willing to work with the customer who is concerned about the integrity of their code.
  • Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are co mmitted to continuously improvin g the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.

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