RE46C144_12 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Internal Power-On Reset
  • Low Quiescent Current Consumption
  • ESD Protection on all Pins
  • Interconnect up to 40 Detectors
  • 10 Minute Timer for Sensitivity Control
  • 75% Duty Cycle Horn Pattern
  • Internal Low Battery and Chamber Test
  • Compatible with Allegro A5358
  • UL Recognized per File S24036 General Description The RE46C144 is a low-power, CMOS photoelectric- type smoke detector IC. With minimal external components, this circuit will provide all the required features for a photoelectric-type smoke detector. The design incorporates a gain selectable photo amplifier for use with an infrared emitter/detector pair. An internal oscillator strobes power to the smoke detection circuitry for 100 µs every 10 seconds to keep standby current to a minimum. If smoke is sensed, the detection rate is increased to verify an Alarm condition. A High Gain mode is available for push-button chamber testing. A check for a low-battery condition and chamber integrity is performed every 43 seconds, when in Standby. The alarm horn pattern utilizes a 75% duty cycle. An interconnect pin allows multiple detectors to be connected such that when one units alarms, all units will sound. An internal 10 minute timer can be used for a reduced sensitivity mode. The RE46C144 device is recognized by Underwriters Laboratories for use in smoke detectors that comply with specification UL217 and UL268. Package Types RE46C144 PDIP , SOIC, SOICN C1 1 DETECT STROBE VDD IRED IO HORNB TEST VSEN VSS ROSC COSC LED FEED HORNS CMOS Photoelectric Smoke Detector ASIC with Interconnect and Timer Mode

DS22180C-page 2  2009-2012 Microchip Technology Inc. Functional Block Diagram Typical Application Logic and Timing Bias and Power Reset Oscillator VDD (5) VSEN (15) C1 (1) DETECT (3) C2 (2) TEST (16) IO (7) FEED (10) HS (9) LED (11) IRED (6) ROSC (13) COSC (12) HB (8) PHOTOAMP STROBE (4) VSS (14) VDD-3.5V VDD-5V Low Battery Smoke Comparator Horn Driver Push-to-Test 1 µF 1.5nF R12 10M 100k R13 330 1.0nF R10 1.5M R11 220k 330 100 µF 560 4700 pF .047 µF 4.7k 8.2k RADJ2 RADJ1 250k To Other Units Battery Smoke Chamber Note 1: C3 should be located as close as possible to the device power pins. 2: C3 is typical for an alkaline battery. This capacitance should be increased to 4.7 µF or greater for a carbon battery. 3: R10, R11 and C6 are typical values and may be adjusted to maximize sound pressure.

 2009-2012 Microchip Technology Inc. DS22180C-page 3 RE46C144

1.0 ELECTRICAL

1.1 Absolute Maximum Ratings†

† Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Supply Voltage V DD 5 6 — 12 V Operating Supply Current I DD1 5 — 4 6 µA Configured as in Typical Application, COSC=VSS IDD2 5 — 5.5 8 µA Configured as in Typical Application, VDD =1 2 V , COSC = VSS IDD3 5 — — 2 mA Configured as in Typical Application, STROBE on, IRED off, VDD =1 2 V IDD4 5 — — 3 mA Configured as in Typical Application, STROBE on, IRED on, VDD = 12V, Note 1 Input Voltage High V IH1 10 6.2 — — V FEED VIH2 7 3.2 — — V No Local Alarm, IO as input VIH3 15 1.6 — — V V SEN VIH4 16 8.5 — — V TEST Input Voltage Low V IL1 10 — — 2.7 V FEED VIL2 7 — — 1.5 V No Local Alarm, IO as Input VIL3 15 — — .5 V VSEN VIL4 1 6——7 V T E S T Input Leakage Low I IL1 1, 2, 3 — — -100 nA V DD =1 2 V , C O S C=1 2 V , STROBE active IIL2 10, 12 — — -100 nA V DD =1 2 V , VIN =V SS IIL3 15, 16 — — -1 µA V DD =1 2 V , VIN =V SS IIFD 10 — — -50 µA FEED = -10V Note 1: Does not include Q3 emitter current. 2: Not production tested. 3: Typical values are for design information and are not ensured. 4: Limits over the specified temperature range are not production tested and are based on characterization data.

DS22180C-page 4  2009-2012 Microchip Technology Inc. Input Leakage High I IH1 1, 2 — — 100 nA V DD =1 2 V , VIN =V DD, STROBE active IIH2 3, 10, 12 — — 100 nA V DD =1 2 V , VIN =V DD IHFD 10 — — 50 µA FEED = 22V Input Pull Down Current IPD1 16 .25 — 10 µA V IN =V DD IPD2 15 .1 .25 .5 µA V IN =V DD IPDIO1 72 0 — 8 0 µ A V IN =V DD IPDIO2 7 — — 140 µA V IN =1 5 V , VDD =1 2 V Output Leakage Current Low IOZL1 11, 13 — — -1 µA Output Off, Output = V SS Output Leakage Current High IOZH1 11, 13 — — 1 µA Output Off, Output = V DD Output Voltage Low V OL1 8, 9 — — 1 V Iol = 16 mA, V DD =6 . 5 V VOL2 13 — .5 — V Iol = 5 mA, V DD =6 . 5 V VOL3 11 — — .6 V Iol = 10 mA, V DD =6 . 5 V Output Voltage High V OH1 8, 9 5.5 — V Iol = -16 mA, V DD =6 . 5 V Output Current I IOH1 7 -4 — -16 mA Alarm, VIO =V DD -2 V o r VIO =0 V IIODMP 7 5 — — mA At Conclusion of Local Alarm or Test, VIO =1 V Low Battery Alarm Voltage VLB 5 6.9 7.2 7.5 V Output Voltage V STOF 4V DD – .1 — — V STROBE off, V DD=12V, IOUT =- 1µ A VSTON 4V DD –5 . 2 5 VDD –5 V DD - 4.75 V STROBE on, V DD =9 V , IOUT = 100 µA to 500 µA VIREDOF 6 — — .1 V IRED off, V DD =1 2 V , IOUT =1µ A VIREDON 6 2.85 3.1 3.35 V IRED on, V DD =9 V IOUT = 0 to -6 mA, TA =+ 2 5 ° C Common Mode Voltage VCM1 1, 2, 3 .5 — V DD – 2 V Local smoke, Push-to-Test or Chamber Test, Note 2 Smoke Compare Reference VREF —V DD –3 . 7 — V DD – 3.3 V Internal Reference Temperature Coefficient TCST 4— . 0 1 — % / º C V DD = 6V to 12V, STROBE Output Voltage TCIRED 6— . 3 — % / º C V DD = 6V to 12V, IRED Output Voltage Line Regulation ∆VSTON 4, 5 — -50 — dB Active, V DD =6 V t o 1 2 V ∆VIREDON 6, 5 — -30 — dB Active, V DD= 6V to 12V DC ELECTRICAL CHARACTERISTICS (CONTINUED) Parameter Symbol Test Pin Min. Typ. Max. Units Conditions Note 1: Does not include Q3 emitter current. 2: Not production tested. 3: Typical values are for design information and are not ensured. 4: Limits over the specified temperature range are not production tested and are based on characterization data.

 2009-2012 Microchip Technology Inc. DS22180C-page 5 RE46C144 TABLE 1-1: AC ELECTRICAL CHARACTERISTICS VSS = 0V, Component Values from Typical Application; R9 =1 0 0K, R12 =1 0M , C5 = 1.5 nF. Parameter Symbol Test Pin Min Typ Max Units Conditions Oscillator Period T POSC 12 9.4 10.5 11.5 ms No alarm condition LED and STROBE On Time TON1 11, 4 9.4 10.5 11.5 ms Operating LED Period T PLED1 11 39 43 47 s Standby, no alarm TPLED2 11 .6 .67 .74 s Local alarm condition TPLED3 11 9.6 10.75 11.8 s Timer mode, no local alarm TPLED4 11 LED IS NOT ON s Remote alarm only STROBE and IRED Pulse Period TPER1 4, 6 9.6 10.75 11.8 s Standby, no alarm TPER1A 4, 6 2.42 2.7 2.96 s Standby, after one valid smoke sample TPER1B 4, 6 1.21 1.33 1.47 s Standby, after two consecutive valid smoke samples TPER2 4, 6 1.21 1.33 1.47 s In Local Alarm (three consecu- tive valid smoke samples) TPER3 4, 6 9.7 10.5 11.8 s In Remote Alarm TPER4 4, 6 300 336 370 ms Push-button Test TPER5 4, 6 39 47 s Chamber Test or Low-battery Test, no alarms IRED On Time T ON2 6 94 104 115 µs Operating Horn On Time T HON1 8, 9 227 252 277 ms Operating, alarm condition, Note 1 THON2 8, 9 9.5 10.5 11.5 ms Low Battery or Failed Chamber Test, no alarm Horn Off Time T HOF1 8, 9 76 84 92 ms Operating, Alarm Condition, Note 1 THOF3 8, 9 39 43 47 s Low Battery or Failed Chamber Test, no alarm IO Charge Dump Duration TIODMP 7 .91 1.46 s At conclusion of local alarm or test IO Delay T IODLY1 7 0 s From start of local alarm to IO Active IO Filter T IOFILT 7 600 ms IO pulse-width ensured to be filtered. IO as input, no local alarm Remote Alarm Delay T IODLY2 7 .75 1.65 s No local alarm, from IO Active to Horn Active Timer Period T TPER 7 8.5 10 Min No alarm condition, Note 2 Note 1: See timing diagram for Horn Temporal Pattern 2: During the Timer mode, the LED period is 10.5 seconds. The LED period will return to 43 seconds at the conclusion of the Timer mode. 3: TPOSC and TON2 are 100% production tested. All other timing is guaranteed by functional testing. 4: Typical values are for design information and are not ensured. 5: Limits over the specified temperature range are not production tested and are based on characterization data.

DS22180C-page 6  2009-2012 Microchip Technology Inc. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, VDD = 9V, VSS = 0V Parameters Symbol Min. Typ. Max. Units Conditions Temperature Ranges Operating Temperature Range T A -25 — +75 °C Storage Temperature Range T STG -55 — +125 °C Thermal Package Resistances Thermal Resistance, 16L-PDIP θJA —7 0— ° C / W Thermal Resistance, 16L-SOIC (150 mil.) θJA — 86.1 — °C/W Thermal Resistance, 16L-SOIC (300 mil.) θJA —8 0— ° C / W

 2009-2012 Microchip Technology Inc. DS22180C-page 7 RE46C144

2.0 PIN DESCRIPTION

The descriptions of the pins are listed in .

2.1 High/Normal Gain Capacitor Pins

(C1, C2) The capacitor connected to the C1 pin sets the photo amplifier gain (high) for the push-to-test and chamber sensitivity test. The size of this capacitor will depend on the chamber background reflections. A = 1+(C1/10), where C1 is expressed in pF. The gain should be <10000. The capacitor connected to the C2 pin sets the photo amplifier gain (normal) during Standby. The value of this capacitor will depend on the smoke sensitivity required. A = 1+(C2/10), where C2 is expressed in pF.

2.2 Photo Diode Input (DETECT)

This input is normally connected to the cathode of an external photo diode operated at zero bias.

2.3 Strobed Detection

Negative Supply (STROBE) Regulated output voltage of V DD-5 which is active during a test for smoke. This output is the negative side of the photo amplifier reference circuitry.

2.4 Positive Power Supply (V DD)

The VDD pin is the device’s positive power supply input.

2.5 Infrared Emitting Diode Pin (IRED)

Provides a regulated pulsed output voltage pre-driver for the infrared emitter. This output usually drives the base of an NPN transistor.

2.6 Interconnect Pin (I/O)

This bidirectional pin provides the capability to interconnect many detectors in a single system. This pin has an internal pull-down device.

2.7 Horn Brass, Inverted Output (HB)

The HB pin is connected to the metal electrode of a piezoelectric transducer.

2.8 Horn Silver Output Pin (HS)

The HS pin is a complementary output to HB and connects to the ceramic electrode of the piezoelectric transducer. TABLE 2-1: PIN FUNCTION TABLE RE46C144 PDIP , SOIC, SOICN Symbol Function

1 C1 High Gain Capacitor Pin

2 C2 Normal Gain Capacitor Pin

3 DETECT Photo Diode Input

4 STROBE Strobed Detection Negative Supply

6 IRED Infrared Emitting Diode Pin

7 IO Interconnect Pin

8 HB Horn Brass, Inverted Output

9 HS Horn Silver Output

10 FEED Horn Feedback Pin

11 LED LED Driver Pin

12 COSC Oscillator Capacitor Input

13 ROSC Oscillator Resistor Drive Low

15 VSEN HushTimer Sensitivity Pin

16 TEST Test Pin

DS22180C-page 8  2009-2012 Microchip Technology Inc.

2.9 Horn Feedback Pin (FEED)

Usually this pin is connected to the feedback electrode through a current limiting resistor. If not used, this pin must be connected to V DD or VSS.

2.10 LED Driver Pin (LED)

This pin is an open drain NMOS output used to drive a visible LED.

2.11 Oscillator Capacitor Input (COSC)

A capacitor connected to this pin, with a parallel resistor, sets the internal clock low time, which is approximately the clock period.

2.12 Oscillator Resistor Drive Low

(ROSC) A resistor between this pin and COSC pin sets the internal clock high time. This also sets the IRED pulse width (100 - 200 µs).

2.13 Hush Timer Sensitivity Pin (VSEN)

In Timer mode, this input pin can be used to set an external smoke comparator reference.

2.14 TEST Pin

This input is used to invoke two test modes and the timer mode. This input has an internal pull-down.

 2009-2012 Microchip Technology Inc. DS22180C-page 9 RE46C144

3.0 DEVICE DESCRIPTION

3.1 Standby Internal Timing

With the external components specified in the illustration Typical Application for ROSC and COSC, the internal oscillator has a nominal period of 10 ms. Normally the analog circuitry is powered down to minimize standby current (typically 4 µA at 9V). Once every 11 seconds, the detection circuitry (normal gain) is powered up for 10 ms. Prior to completion of the 10 ms period, the IRED pulse is active for 100 µs. At the conclusion of the 10 ms period, the photo amplifier is compared to an internal reference to determine the chamber status and latched. If a smoke condition is present, the period to the next detection decreases and additional checks are made. Three consecutive smoke detections will cause the device to go into alarm, and the horn circuit and interconnect will be active. Once every 43 seconds, the status of the battery volt- age is checked. This status is checked and latched at the conclusion of the LED pulse. In addition, once every 43 seconds the chamber is activated and, using the high gain mode (capacitor C1), a check of the chamber is made by amplifying background reflections. If either the low battery or the photo chamber test fails, the horn will chirp for 10 ms every 43 seconds. The oscillator period is determined by the values of R9, R12 and C5 (see Typical Application). The oscillator period is as follows: EQUATION 3-1:

3.2 Smoke Detection Circuitry

A comparator compares the photo amp output to an internal reference voltage. If the required number of consecutive smoke conditions is met, the device will go into local alarm and the horn will be active. In local alarm, the C2 gain is internally increased by approximately 10% to provide alarm hysteresis.

3.3 Push-to-Test Operation

If the Test input pin is activated (VIH), after one internal clock cycle, the smoke detection rate increases to once every 330 ms. In this mode, the high-gain capacitor C1 is selected, and background reflections are used to simulate a smoke condition. After the required consecutive detections, the device will go into a local alarm condition. When the Test input is deactivated IL) and after one clock cycle, the normal gain capacitor C1 is selected. The detection rate continues at once every 330 ms until three consecutive no smoke conditions are detected. At this point, the device returns to standby timing.

3.4 LED Operation

In Standby, the LED is pulsed on for 10 ms every 43 seconds. In a local alarm condition or the push-to- test alarm, the LED pulse frequency is increased to once every .5 seconds. In the case of a remote alarm the LED not active. In the Timer mode of operation, the LED is pulsed on for 10 ms every 10 seconds.

3.5 Interconnect Operation

The bidirectional I/O pin allows for interconnection of multiple detectors. In a local alarm condition, this pin is driven high immediately through a constant current source. Shorting this output to ground will not cause excessive current. The I/O is ignored as an input during a local alarm. The I/O pin also has an NMOS discharge device that is active for 1 second after the conclusion of any type of local alarm. This device helps to quickly discharge any capacitance associated with the interconnect line. If a remote active high signal is detected, the device goes into remote alarm and the horn will be active. Internal protection circuitry allows for the signaling unit to have a higher supply voltage than the signaled unit, without excessive current draw. The interconnect input has a 670 ms nominal digital filter. This allows for interconnection to other types of alarms (carbon monoxide, for example) that may have a pulsed interconnect signal. Note: All timing references are nominal. See electrical characteristics for limits. T=T R +T F Where: TR = .693 x R12 x C5 TF =. 6 9 3xR 9xC 5

DS22180C-page 10  2009-2012 Microchip Technology Inc.

3.6 Low Battery Detection

In Standby, an internal reference is compared to the voltage divided V DD supply. A low battery status is latched at the conclusion of the LED pulse. The horn will chirp for 10 ms every 43 seconds, until the low battery condition no longer exists. The low battery test is not performed in a local or remote alarm condition. The low battery notification does not sound in a local or remote alarm condition.

3.7 Chamber Fail Detection

In Standby, a chamber test is also performed every 43 seconds, by switching to the high gain capacitor C1 and sensing the photo chamber background reflections. Two consecutive chamber test failures will also cause the horn to chirp for 10 ms every 43 seconds. The low battery chirp occurs just before the LED pulse (see Figure 3-1). The chamber test and chamber test failure chirp occurs approximately 21 seconds after the LED pulse. The chamber tests are not performed in a local or remote alarm condition. The chamber fail notification does not sound in a local or remote alarm condition.

3.8 Timer Mode

If resistors RADJ1 and RADJ2 are in place and a high-to- low transition occurs on the Test input, the device enters a 10 minute timer mode. In this mode, the smoke comparator reference is switched from the internal V DD - 3.5V reference to the voltage that appears on VSEN (pin 15). This allows the sensitivity to be modified for the duration of the 10 minute timer period. The chamber test is performed in Timer mode. If VSEN is left unconnected or tied to V SS, the Timer mode of operation is inhibited.

3.9 Diagnostic Mode

In addition to the normal function of the Test input, a special diagnostic mode is available to calibrate and test the smoke detector. Taking the Test pin below VSS and sourcing ~300 µA out of the pin for one clock cycle will enable the diagnostic mode. In diagnostic mode, some of the pin functions are redefined. Refer to Table 3-1 for redefined pin functions in the diagnostic mode. In addition, in this mode Strobe is always enabled, and the IRED is pulsed at the clock rate of 10 ms nominal. TABLE 3-1: DIAGNOSTIC MODE PIN FUNCTION Pin Name Pin Number Function IO 7 Disabled as an output. A high on this pin directs the photo amplifier output to pin C1 (1) or C2 (2), determined by the level on VSEN (15). Amplification occurs during the IRED active time. VSEN 15 If IO is high, then this pin controls the gain capacitor that is used. If VSEN is low, the normal gain is selected and the photo amplifier output appears on C1 (1). If VSEN is high, high gain is selected and the photo amplifier output is on C2 (2). FEED 10 If VSEN (15) is low, then taking this input high will enable hysteresis, which is a nominal 10% gain increase in normal gain mode. COSC 12 If desired, this pin can be driven by an external clock. HORNB 8 This pin becomes the smoke integrator output. A high level indicates that an alarm condition has been detected. LED 11 The LED pin is used as a low battery indicator. For V DD above the low battery thresh- old, the open drain NMOS is off. If VDD falls below the threshold, the NMOS turns on.

 2009-2012 Microchip Technology Inc. DS22180C-page 11 RE46C144 FIGURE 3-1: RE46C144 Timing Diagram – Standby, Low Supply and Chamber Test Failure. Oscillator TPOSC TPWOSC Internal Clock TON1 TPER1 STROBE TON2 IRED TPLED1 LED Low Supply or Chamber Test Failure LED Low BatteryTest THON3 Low Battery Warning Chirp Low Battery Warning Chirp Horn THOF3 Chamber Test and Warning is Offset from Low Battery Test and Warning by 21.5 Seconds Standby, No Alarm (not to scale)

DS22180C-page 12  2009-2012 Microchip Technology Inc. FIGURE 3-2: RE46C144 Timing Diagram – Local Alarm, Horn and Interconnect Timings. Local Alarm Timing (not to scale) TPER2 STROBE IRED TPLED2 LED Horn Timing No Alarm Local or Remote Alarm No Alarm THON1 THOF1 Horn Interconnect Timing TIODLY1 IO as Output TIOFILT TIODLY2 IO as Input Notes: 1. Smoke is not sampled when the horn is active. Horn cycle is self-completing in local alarm. 2. Low battery warning chirp is suppressed in local or remote alarm 3. IO Dump active only in local alarm, inactive if external alarm

 2009-2012 Microchip Technology Inc. DS22180C-page 13 RE46C144

4.0 PACKAGING INFORMATION

4.1 Package Marking Information

Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 16-Lead PDIP (300 mil) Example RE46C144-V/P^^ 1207256 16-Lead Narrow SOIC (3.90 mm) Example RE46C144 V/SL^^ 1207256 16-Lead Wide SOIC (7.50 mm) Example RE46C144 V/SO^^ 1207256

DS22180C-page 14  2009-2012 Microchip Technology Inc. /g20/g25/g16/g47/g72/g68/g71/g3/g51/g79/g68/g86/g87/g76/g70/g3/g39/g88/g68/g79/g3/g44/g81/g16/g47/g76/g81/g72/g3/g11/g51/g12/g3/g177/g3/g22/g19/g19/g3/g80/g76/g79/g3/g37/g82/g71/g92/g3/g62/g51/g39/g44/g51/g64 /g49/g82/g87/g72/g86/g29 /g20/g17 /g51/g76/g81/g3/g20/g3/g89/g76/g86/g88/g68/g79/g3/g76/g81/g71/g72/g91/g3/g73/g72/g68/g87/g88/g85/g72/g3/g80/g68/g92/g3/g89/g68/g85/g92/g15/g3/g69/g88/g87/g3/g80/g88/g86/g87/g3/g69/g72/g3/g79/g82/g70/g68/g87/g72/g71/g3/g90/g76/g87/g75/g76/g81/g3/g87/g75/g72/g3/g75/g68/g87/g70/g75/g72/g71/g3/g68/g85/g72/g68/g17 /g21/g17 /g134/g3/g54/g76/g74/g81/g76/g73/g76/g70/g68/g81/g87/g3/g38/g75/g68/g85/g68/g70/g87/g72/g85/g76/g86/g87/g76/g70/g17 /g22/g17 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3/g39/g3/g68/g81/g71/g3/g40/g20/g3/g71/g82/g3/g81/g82/g87/g3/g76/g81/g70/g79/g88/g71/g72/g3/g80/g82/g79/g71/g3/g73/g79/g68/g86/g75/g3/g82/g85/g3/g83/g85/g82/g87/g85/g88/g86/g76/g82/g81/g86/g17/g3/g48/g82/g79/g71/g3/g73/g79/g68/g86/g75/g3/g82/g85/g3/g83/g85/g82/g87/g85/g88/g86/g76/g82/g81/g86/g3/g86/g75/g68/g79/g79/g3/g81/g82/g87/g3/g72/g91/g70/g72/g72/g71/g3/g17/g19/g20/g19/g5/g3/g83/g72/g85/g3/g86/g76/g71/g72/g17 /g23/g17 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g76/g81/g74/g3/g68/g81/g71/g3/g87/g82/g79/g72/g85/g68/g81/g70/g76/g81/g74/g3/g83/g72/g85/g3/g36/g54/g48/g40/g3/g60/g20/g23/g17/g24/g48/g17 /g37/g54/g38/g29 /g37/g68/g86/g76/g70/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g17/g3/g55/g75/g72/g82/g85/g72/g87/g76/g70/g68/g79/g79/g92/g3/g72/g91/g68/g70/g87/g3/g89/g68/g79/g88/g72/g3/g86/g75/g82/g90/g81/g3/g90/g76/g87/g75/g82/g88/g87/g3/g87/g82/g79/g72/g85/g68/g81/g70/g72/g86/g17 /g49/g82/g87/g72/g29/g41/g82/g85/g3/g87/g75/g72/g3/g80/g82/g86/g87/g3/g70/g88/g85/g85/g72/g81/g87/g3/g83/g68/g70/g78/g68/g74/g72/g3/g71/g85/g68/g90/g76/g81/g74/g86/g15/g3/g83/g79/g72/g68/g86/g72/g3/g86/g72/g72/g3/g87/g75/g72/g3/g48/g76/g70/g85/g82/g70/g75/g76/g83/g3/g51/g68/g70/g78/g68/g74/g76/g81/g74/g3/g54/g83/g72/g70/g76/g73/g76/g70/g68/g87/g76/g82/g81/g3/g79/g82/g70/g68/g87/g72/g71/g3/g68/g87/g3 /g75/g87/g87/g83/g29/g18/g18/g90/g90/g90/g17/g80/g76/g70/g85/g82/g70/g75/g76/g83/g17/g70/g82/g80/g18/g83/g68/g70/g78/g68/g74/g76/g81/g74 /g56/g81/g76/g87/g86/g44/g49/g38/g43/g40/g54 /g39/g76/g80/g72/g81/g86/g76/g82/g81/g3/g47/g76/g80/g76/g87/g86 /g48/g44/g49 /g49/g50/g48 /g48/g36/g59 /g49/g88/g80/g69/g72/g85/g3/g82/g73/g3/g51/g76/g81/g86/g49 /g20/g25 /g51/g76/g87/g70/g75 /g72 /g17/g20/g19/g19/g3/g37/g54/g38 /g55/g82/g83/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g36 /g177 /g177 /g17/g21/g20/g19 /g48/g82/g79/g71/g72/g71/g3/g51/g68/g70/g78/g68/g74/g72/g3/g55/g75/g76/g70/g78/g81/g72/g86/g86 /g36/g21 /g17/g20/g20/g24 /g17/g20/g22/g19 /g17/g20/g28/g24 /g37/g68/g86/g72/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g36/g20 /g17/g19/g20/g24 /g177 /g177 /g54/g75/g82/g88/g79/g71/g72/g85/g3/g87/g82/g3/g54/g75/g82/g88/g79/g71/g72/g85/g3/g58/g76/g71/g87/g75 /g40 /g17/g21/g28/g19 /g17/g22/g20/g19 /g17/g22/g21/g24 /g48/g82/g79/g71/g72/g71/g3/g51/g68/g70/g78/g68/g74/g72/g3/g58/g76/g71/g87/g75 /g40/g20 /g17/g21/g23/g19 /g17/g21/g24/g19 /g17/g21/g27/g19 /g50/g89/g72/g85/g68/g79/g79/g3/g47/g72/g81/g74/g87/g75 /g39 /g17/g26/g22/g24 /g17/g26/g24/g24 /g17/g26/g26/g24 /g55/g76/g83/g3/g87/g82/g3/g54/g72/g68/g87/g76/g81/g74/g3/g51/g79/g68/g81/g72 /g47 /g17/g20/g20/g24 /g17/g20/g22/g19 /g17/g20/g24/g19 /g47/g72/g68/g71/g3/g55/g75/g76/g70/g78/g81/g72/g86/g86 /g70 /g17/g19/g19/g27 /g17/g19/g20/g19 /g17/g19/g20/g24 /g56/g83/g83/g72/g85/g3/g47/g72/g68/g71/g3/g58/g76/g71/g87/g75 /g69/g20 /g17/g19/g23/g24 /g17/g19/g25/g19 /g17/g19/g26/g19 /g47/g82/g90/g72/g85/g3/g47/g72/g68/g71/g3/g58/g76/g71/g87/g75 /g69 /g17/g19/g20/g23 /g17/g19/g20/g27 /g17/g19/g21/g21 /g50/g89/g72/g85/g68/g79/g79/g3/g53/g82/g90/g3/g54/g83/g68/g70/g76/g81/g74/g3/g3/g134 /g72/g37 /g177 /g177 /g17/g23/g22/g19 N E1NOTE 1 D 12 3 A A1 b1 b e L E eB c /g48/g76/g70/g85/g82/g70/g75/g76/g83 /g55/g72/g70/g75/g81/g82/g79/g82/g74/g92 /g39/g85/g68/g90/g76/g81/g74 /g38/g19/g23/g16/g19/g20/g26/g37

 2009-2012 Microchip Technology Inc. DS22180C-page 15 RE46C144 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS22180C-page 16  2009-2012 Microchip Technology Inc. Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

 2009-2012 Microchip Technology Inc. DS22180C-page 17 RE46C144 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS22180C-page 18  2009-2012 Microchip Technology Inc. Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

 2009-2012 Microchip Technology Inc. DS22180C-page 19 RE46C144 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging

DS22180C-page 20  2009-2012 Microchip Technology Inc. /g20/g25/g16/g47/g72/g68/g71/g3/g51/g79/g68/g86/g87/g76/g70/g3/g54/g80/g68/g79/g79/g3/g50/g88/g87/g79/g76/g81/g72/g3/g11/g54/g50/g12/g3/g177/g3/g58/g76/g71/g72/g15/g3/g26/g17/g24/g19/g3/g80/g80/g3/g37/g82/g71/g92/g3/g62/g54/g50/g44/g38/g64/g3/g47/g68/g81/g71/g3/g51/g68/g87/g87/g72/g85/g81/g3/g3 /g49/g82/g87/g72/g29/g41/g82/g85/g3/g87/g75/g72/g3/g80/g82/g86/g87/g3/g70/g88/g85/g85/g72/g81/g87/g3/g83/g68/g70/g78/g68/g74/g72/g3/g71/g85/g68/g90/g76/g81/g74/g86/g15/g3/g83/g79/g72/g68/g86/g72/g3/g86/g72/g72/g3/g87/g75/g72/g3/g48/g76/g70/g85/g82/g70/g75/g76/g83/g3/g51/g68/g70/g78/g68/g74/g76/g81/g74/g3/g54/g83/g72/g70/g76/g73/g76/g70/g68/g87/g76/g82/g81/g3/g79/g82/g70/g68/g87/g72/g71/g3/g68/g87/g3 /g75/g87/g87/g83/g29/g18/g18/g90/g90/g90/g17/g80/g76/g70/g85/g82/g70/g75/g76/g83/g17/g70/g82/g80/g18/g83/g68/g70/g78/g68/g74/g76/g81/g74

 2009-2012 Microchip Technology Inc. DS22180C-page 21 RE46C144 APPENDIX A: REVISION HISTORY Revision C (June 2012) The following is the list of modifications: 1. Restructured the entire document. 2. Moved the Functional Block Diagram and Typical Application figures to the beginning of the document. 3. Added Temperature Characteristics table. 4. Reorganized Section 2.0, Pin Description . Simplified Table 3-1, and added description sections. 5. Added Section 4.0, Packaging Information. 6. Added the Product Identification System section. Revision B (October 2009)

  • Undocumented changes Revision A (May 2009)
  • Original Release of this Document

DS22180C-page 22  2009-2012 Microchip Technology Inc. NOTES:

 2009-2012 Microchip Technology Inc. DS22180C-page 23 RE46C144 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office . PART NO. /X PackageDevice Device RE46C144: CMOS Photoelectric Smoke Detector ASIC RE46C144T: CMOS Photoelectric Smoke Detector ASIC (Tape and Reel, SOIC only) Package E = Plastic Dual In-Line, 300 mil. Body, 16-Lead (PDIP) S = Small Plastic Outline - Narrow, 3.90 mm Body, 16-Lead (SOIC) SW = Small Plastic Outline - Wide, 7.50 mm Body, 16-Lead (SOIC) Examples: a) RE46C144E16F: 16LD PDIP Package b) RE46C144S16F: 16LD SOIC Package c) RE46C144S16TF: 16LD SOIC Package, Tape and Reel d) RE46C144SW16F: 16LD SOIC Package e) RE46C144SW16TF: 16LD SOIC Package, Tape and Reel XX Number of Pins

DS22180C-page 24  2009-2012 Microchip Technology Inc. NOTES:

 2009-2012 Microchip Technology Inc. DS22180C-page 25 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY , PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2009-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62076-352-0 Note the following details of the code protection feature on Microchip devices:

  • Microchip products meet the specification cont ained in their particular Microchip Data Sheet.
  • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions.
  • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
  • Microchip is willing to work with the customer who is concerned about the integrity of their code.
  • Neither Microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are co mmitted to continuously improvin g the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT S YSTEM CERTIFIED BY DNV == ISO/TS 16949 ==

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