RE46C126 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

  • Guard Outputs for Ion Detector Input
  • +/-0.75pA Detect Input Current
  • Internal Reverse Battery Protection
  • Internal Low Battery Detection
  • Low Quiescent Current Consumption (<6.5uA)
  • Available in 16L PDIP or 16L N SOIC
  • ESD Protection on all Pins
  • Interconnect up to 40 Detectors
  • Compatible with MC14468
  • Available in Standard Packaging or RoHS Complaint Pb Free Packaging Pin Configuration

161 GUARD2DETCOMP

2 DETECT IO 15

3 GUARD1LBADJ 14

4 VSENSTROBE 13

PARAMETER SYMBOL VALUE UNITS Supply Voltage VDD 15 V Input Voltage Range Except FEED, IO Vin -.3 to Vdd +.3 V FEED Input Voltage Range Vinfd -10 to +22 V IO Input Voltage Range Vio1 -.3 to 17 V Reverse Battery Time TRB 5 S Input Current except FEED Iin 10 mA Operating Temperature TA -10 to 60 °C Storage Temperature TSTG -55 to 125 °C Maximum Junction Temperature TJ 150 °C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and operation at these conditions for extended periods may affect device reliability. This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when handling this product. Damage can occur when exposed to extremely high static electrical charge OSCAP5 12LED VDD RBIAS FEED

6 HS11

7 HB10

CMOS Ionization Smoke Detector ASIC R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 2 otherwise noted) Limits Parameter Symbol Test Pin Test Conditions Min Typ Max Units Supply Voltage VDD 6 Operating 6 12 V IDD1 6 RBIAS=8.2MΩ, OSCAP=.1uF 4.5 6.5 uA Supply Current IDD2 6 RBIAS=8.2MΩ, OSCAP=.1uF;Vdd=12V 9 uA VIH1 8 6.2 4.5 V Input Voltage High VIH2 2 No Local Alarm, IO as an Input 3 V VIL1 8 4.5 2.7 V Input Voltage Low VIL2 2 No Local Alarm, IO as an Input 1 V ILDET1 15 VDD=9V, DETECT=VSS, 0-40% RH -0.75 pA ILDET2 15 VDD=9V, DETECT=VSS, 85% RH Note 1 -1.50 pA Input Leakage Low ILFD 8 FEED=-10V -50 uA IHDET1 15 VDD=9V, DETECT=VDD, 0-40% RH 0.75 pA IHDET2 15 VDD=9V, DETECT=VDD, 85% RH Note 1 1.50 pA IHFD 8 FEED=22V 50 uA IIOL1 2 No Alarm, Vio=Vdd-2V 25 100 uA Input Leakage High IIOL2 2 No Alarm, Vio=17V 150 uA Output Off Leakage High IIOHZ 4,5 Output Off 1 uA VOH1 10,11 IOH=-16mA, VDD=7.2V 6.3 V Output Voltage High VOH2 1 IOH=-30ua 8.5 V VOL1 10,11 IOL=16mA, VDD=7.2V .9 V VOL2 1,4 IOL=30ua .5 V Output Voltage Low VOL3 5 IOL=10mA, VDD=7.2V 3 V IIOH1 2 Alarm, Vio=Vdd-2V or Vio=0V -4 -16 mA Output Current IIODMP 2 At Conclusion of Local Alarm or Test, Vio=1V 5 mA Low Battery Voltage VLB 6 TA=-10 to 60ºC, Note 3 7.2 7.5 7.8 V VSET1 13 47 50 53 %VDD Internal Sensitivity Set Voltage VSET2 3 65.5 %VDD VGOS1 14,15 Guard Amplifier -50 50 mV VGOS2 15,16 Guard Amplifier -50 50 mV Offset Voltage VGOS3 13,15 Smoke Comparator -50 50 mV VCM1 14,15 Guard Amplifier, Note 2 2 VDD-.5 V Common Mode Voltage VCM2 13,15 Smoke Comparator, Note 2 .5 VDD-2 V Output Impedance ZOUT 14,16 Guard Amplifier Outputs, Note 2 10 kΩ Hysteresis VHYS 13 No Alarm to Alarm Condition 90 130 170 mV Note 1: Sample test only Note 2: Not 100% production tested Note 3: Production test at room with temperature guardbanded limits.

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 3 otherwise noted) Limits Parameter Symbol Test Pin Test Conditions Min Typ Max Units TPER1 12 No Alarm Condition 1.34 1.67 2 S Oscillator Period TPER2 12 Alarm Condition 37.5 41.5 45.8 mS Oscillator Pulse Width TPW 5 Operating 9.1 10.5 12.9 mS LED On Time TLON 5 Operating 9.1 10.5 12.9 mS TLOF1 5 Standby, No Alarm 32 40 48 S LED Off Time TLOF2 5 Alarm Condition .9 1 1.1 S THON1 10,11 Operating, Alarm Condition, Note 4 141 166 190 mS Horn On Time THON2 10,11 Low Battery, No Alarm 9.4 10.5 12.9 mS THOF1 10,11 Operating, Alarm Condition, Note 4 71 83 95 mS Horn Off Time THOF3 10,11 Low Battery, No Alarm 32 40 48 S IO Charge Dump Duration TIODMP 2 At Conclusion of Local Alarm or Test 1.34 1.67 2.0 S IO Delay TIODLY1 2 From Start of Local Alarm to IO Active 3 S IO Filter TIOFILT 2 IO pulse width guaranteed to be filtered. IO as Input, No Local Alarm 450 mS Remote Alarm Delay TIODLY2 2 No Local Alarm, IO as input, From IO active to Horn Active .450 2.2 S Note 4 – See the timing diagram for the horn 2/3 duty cycle pattern.

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 4 Functional Block Diagram Figure 1

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 5 DEVICE DESCRIPTION and APPLICATION NOTES Note: All timing references are nominal values. Refer to the electrical specifications for limits Internal Timing – With external components as indicated on the app lication drawing the period of the oscillator is nominally 1.67 seconds in standby. Every 1.66 seconds the detection circuitry is powered up for 10.5mS and the status of the smoke comparator is latched. In addition every 40 seconds t he LED driver is turned on for 10.5mS and the status of the low battery com parator is latched. The smoke comparat or status is not checked during the low battery test, during the low battery horn warning chirp, or when the horn is on due to an alarm condition. If an alarm condition is detected the oscillator period increases to 41.5mS. Due to the low currents used in the oscillator the c apacitor on pin 12 should be a low leakage type. Oscillator accuracy will depend mainly on the tolerance of the RBIAS resistor and OSCAP capacitor. Smoke Detection Circuit – The smoke comparator compares the i onization chamber voltage to a voltage derived from a resistor divider across VDD. This divider voltage is available externally on pin 13 (VSEN). Pin 13 (VSEN) can be used to modify the internal set point for the smoke comparator by using external resistors to VDD or VSS. Nominal values for the internal resistor divider are indicated on the block diagram. These internal resistor values can vary by up to ±20% but the resistor matching will be <2% on any one device. A transmission switch on pin 13 isolates this pin during the low battery test so that the low battery set point will not be affected if external resistors are used to modify the smoke sensitivity set point. The guard amplifier and outputs are always active and will be within 50mV of the DETECT input to reduce surface leakage. The guard outputs also allow for measurement of the DETECT input without loading the ionization chamber. Low Battery Detection - An internal reference is compared to t he voltage divided VDD supply. The battery can be checked under load via the LED low side driver output since low battery stat us is latched at the end of the 11mS LED pulse. Pin 3 (LBADJ) can be used to modify the low ba ttery set point by placing a resistor to VDD or VSS. Note that the internal resistor string is common to both pin 3 and pin 13 so there will be some interaction between the two. Modification of the low battery set point may affect the smoke sensitivity setting. LED Pulse – The LED is pulsed on for 10.5mS every 40S in standby. In alarm the LED is pulsed on for 10.5mS every 1S. For a remote alarm condition the LED is always off. Interconnect – Pin 2 (IO) provides the capability to common m any detectors in a single system. If a single unit goes into alarm the IO pin is driven high. This high si gnal causes the interconnected units to alarm. The LED flashes every 1S for 10.5mS on the signaling unit and is inhibited on the units that are in alarm due to the IO signal. An internal sink device on the IO pin helps to discharge the interconnect line. This dump device is active for 1 clock cycle after the unit exits the alarm condition (1.67S). The interconnect input has a 500mS nominal digital filter. Th is allows for interconnection to other types of alarms (carbon monoxide for example) that may have a pulsed interconnect signal. Testing - By holding pin 12 (OSCAP) low the internal power strobe is active and pin1 (DETCOMP) can be used to check for smoke. Please refer to the timing diagrams.

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 6 Typical Application Figure 2 Notes: 1. R3, R4 and C1 are typical values and may be adjusted to maximize sound pressure. 2. C2 should be located as close as possible to the device power pins. 3. Route the pin 8 PC board trace aw ay from pin 7 to avoid coupling.

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 7 Timing Diagram Standby Mode; No Low Battery; No Alarm Alarm; No Low Battery Alarm; Low Battery Oscillator 1.67S 10.5mS Internal Clock

24 Clock Cycles (40 S)

DETCOMP (pin1) Sample Smoke Floating STROBE (pin 4) Low Battery Warning Chirp Horn See Figure Below for Complete Horn Cycle IO (Pin 2) as Output IO Charge Dump TIODMP TIOFILT IO ( Pin 2) as Input LED supressed in remote alarm mode TIODLY2 Horn Start of horn pattern is not synchronized to an external alarm Horn pattern not self completing for external alarm Internal Clock Notes: 1. Smoke is not sampled when the horn is active. Horn cycle is self completing in local alarm 2. Low battery warning chirp is suppressed in alarm 3. IO Dump active only in local alarm, inactive if external alarm No Alarm; Low Battery

24 Clock Cycles (1S)

Pin 15 > Pin 13 Pin 15 > Pin 13Pin 13 > Pin 15; 130mV Level Shift on Pin 13

CMOS Ionization Smoke Detector ASIC with Interconnect R&E International Product Specification A Subsidiary of Microchip Technology Inc. © 2009 Microchip Technology Inc. DS22170A-page 8 Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE . Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages , claims, suits, or expenses resulting from such use. No licens es are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, t he Microchip logo, Accuron, dsPIC, K EELOQ, K EELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC, SmartShunt and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, Linear Acti ve Thermistor, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, nanoWatt XLP, PICkit, PICDEM, PICDEM.net, PICtail, PIC logo, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Micr ochip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 ce rtification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC ® MCUs and dsPIC DSCs, K EELOQ ® code hopping devices, Serial EEPROMs, microperipherals, nonvolat ile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.