RDHA701CD10A2NX IRF | Alldatasheet

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Technical content

Radiation Hardended, 100V, Dual 1.0A, Solid State Relay www.irf.com 1 05/18/12 Description Features: /G110Total Dose Capability to 100KRad (Si) /G110Optically Coupled /G1101000VDC Input-to-Output, Channel-to-Channel, and Pin-to-Case Isolation /G110Hermetically Sealed Ceramic Package The RDHA701CD10A2NX is a radiation hardened dual Solid State Relay in a hermatic package. It is configured as dual single pole single throw (SPST) normally open relay. This device is characterized for 100KRad (Si) total ionizing dose. The output MOSFET utilizes International Rectifier’s R5 Technology. RDHA701CD10A2NX For notes, please refer to page 2 Product Summary Part Number Voltage Current Configuration Rad Level RDHA701CD10A2NX 100V 1.0A Dual DC 100K Absolute Maximum Ratings @ Tj = 25°C (unless otherwise specified) Parameter S ymbol Value Units Output Withstand Voltage VO (OFF) 100 V Output Current /c102 IO 1.0 A Input Forward Current IF 40 Peak Input Forward Current (t ≤1.0ms) IF pk 100 Peak Input Reverse Voltage (t ≤1.0ms) VR 5.0 V Power Dissipation PDISS 1.0 W Operating Temperature Range TJ -55 to +125 Storage Temperature Range TS -65 to +150 °C Lead Temperature (soldering ≤ 10sec) TL 300 Weight 0.8 (typ) g mA PD-97578B

2 www.irf.com RDHA701CD10A2NX Notes for Maximum Ratings and Electrical Characteristic Tables /G129 Specification is guaranteed by design. /G130 Rise and fall times are controlled internally. /G131 Optically coupled Solid State Relays (SSRs) have relatively slow turn-on and turn-off times. Care must be taken to insure that transient currents do not cause a violation of SOA. If transient conditions are present, IR recommends a complete simulation to be performed by the end user to ensure compliance with SOA requirements as specified in the IRHQ57110 data sheet. /G109 While the SSR design meets the design requirements specified in MIL-PRF-38534, the end user is responsible for product derating, as applicable for the application. /G110 Reference Fig. 2 for Switching Test Circuit and Fig. 3 for Switching Test Wave Form. /G111 Turn-On Time (ton) includes the turn-on delay and rise time; Turn-Off Time (toff) includes the turn-off delay and fall /G32 time /G135 International Rectifier does not currently have a DLA certified Radiation Hardness Assurance Plan. Electrical Characteristics per Channel @ -55°C/c100 TC/c100 +125°C (Unless Otherwise Specified) Parameter Group A Test Conditions Symbol Min. Typ. Max. Units Subgroups 1- - 0.25 0.40 2 -- 0.39 0.80 1- - - - 1 0 2- - - - 2 5 Input Forward Voltage 1, 2, 3 IF = 10mA V F 1.0 -- 1.85 V Input-to-Output Leakage Current II-O Channel-to-Channel Leakage Current 1 VI-O = 1000Vdc, dwell = 5s I CH-CH -- -- 1.0 µA Pin-to-Case Leakage Current ICASE IF = 0 to 10mA, VBus = 28V, IO = 1.0A, Duty Cycle ≤ 1.0% IF = 10mA to 0, VBus = 28V, IO = 1.0A, Duty Cycle ≤ 1.0% Output Capacitance /c99 IF= 0, V=+25V, f=1MHz,TC=25°C C OSS -- 110 -- pF Thermal Resistance /c99 Per Channel RTHJC -- -- 15 °C/W MTBF MIL-HDBK-217F, SF@ TC=25°C 22.7 -- -- MHrs 9, 10, 11 µAIO -- -- 2.0 ms 4.0 Ω -- -- Turn-Off Time /c103/c104 Output On-Resistance IF = 10mA, IO= 1.0A R DS(ON) Turn-On Time /c103/c104 9, 10, 11 ton toff IF = 0, VOUT = 100V Output Leakage Current

www.irf.com 3 RDHA701CD10A2NX Fig 1: Block Diagram Fig 2: Switching Test Circuit Anode 1 Cathode 1 Cathode 2 Anode 2 V_OUT_1+ V_OUT_1- V_OUT_2+ V_OUT_2- V_IN Anode 1 Cathode 1 Anode 2 Cathode 2 V_OUT_1- V_OUT_1+ V_OUT_2- V_OUT_2+ VDD V_Bus RL RS

4 www.irf.com RDHA701CD10A2NX Fig 3: Switching Test Waveform IF VO toffton 10% 50% 90% 50% Case Outline and Dimensions — Package (8 Pin Ceramic) Notes 1. Dimensioning and Tolerancing per ASME Y14.5SM-1994 2. Controlling Dimension: Inch 3. Dimensions are shown in inches 4. Tolerances are +/- 0.005 UOS

www.irf.com 5 RDHA701CD10A2NX Part Numbering Nomenclature IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information . Data and specifications subject to change without notice. 05/2012 Device Type RD = DC Solid State Relay Radiation Hardening Blank = No Rad Tolerance H = RAD Hard Generation A = Current design Current 01 = 1.0A Voltage 10 = 100 Volts Screening Level P = Unscreened. 25°C Electrical test (Not for qualification) X = K Level Screening per MIL-PRF-38534 Poles 2 = 2 Poles Package CD = 8 Pin Ceramic Radiation Level 7=100K Rad (Si)

Features

N = Non Buffered Fast Throw Configuration A = Single Throw , Normally Open XN2A10CD017AHRD