RD5N60 RECTRON | Alldatasheet
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Technical content
N-CHANNEL MOSFET in a TO-252 Package.
Description
Low gate charge, low crss, fast switching. These devices are well suited for high efficiency switching DC/DC converters and switch mode power D G S Schematic diagram Pin assignment TO-252 Package Marking and Ordering Information R e v . D M a y . - 2 0 1 6 Package Type Units Dimension (unit mm Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Inner Box Outer Box TO-252 2,500 2 5,000 5 25,000 ×16 360×360×50 385×257×392 PIN1 GP I N 2 DP I N 3 SP I N 4 D RD5N60
Drain-Source Voltage V DSS 600 V Drain Current I D (Tc=25 °C )5 . 0 A Drain Current I D (Tc=100 °C )2 . 6 A Drain Current - Pulsed I DM 18 A Gate-Source Voltage V GSS ±30 V Single Pulsed Avalanche Energy E AS 210 mJ Repetitive Avalanche Energy E AR 10 mJ Avalanche Current I AR 4.5 A Power Dissipation P D (Tc=25 °C )3 5 W Operating and Storage Temperature Range T J ,T STG - 5 5t o1 5 0 °C Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BV DSSVGS=0V ID=250μA 600 V Zero Gate Voltage Drain Current I DSS VDS=600V VGS=0V 1.0 μA VDS=480V TC=125°C 10μA Gate-Body Leakage Current Forward IGSSVGS=±30V VDS=0V ±0.1 μA Gate Threshold Voltage V GS(th)VDS=VGSID=250μA2 . 0 4 . 0V Static Drain-Source On-Resistance RDS(on)VGS=10V ID=2.25A 2.0 2.5 Ω Forward Transconductance g FSVDS=40V ID=2.25A 4.7 S Drain-Source Diode Forward Voltage VSDVGS=0V IS=4.5A 1.4 V Input Capacitance C iss VDS=25V VGS=0V f=1.0MHz 515 670 pF Output Capacitance C oss 55 72 pF Reverse Transfer Capacitance C rss 6.5 8.5 pF Turn-On Delay Time t d(on) VDD=300V ID=4.5A RG=25Ω 10 30 ns Turn-On Rise Time t r 42 90 ns Turn-Off Delay Time t d(off) 38 85 ns Turn-Off Fall Time t f 46 100 ns Absolute Maximum Ratings (Ta=25°C) Electrical Characteristics (Ta=25°C)
Electrical Charac teristic Curv e RD5N60
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