RD12F

RD82F NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. ZENER DIODES RD2.0F to RD82F ZENER DIODES

1 W DO-41 GLASS SEALED PACKAGE

Document No. D13936EJ3V0DS00 (3rd edition) (Previous No. SC-1007A) Date Published June 2000 N CP(K) Printed in Japan © 1982

DESCRIPTION

NEC type RD ∗∗F Series are DHD (Double Heatsink Diode) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt.

FEATURES

• DHD (Double Heatsink Diode) Construction
• Planar process Z: Applied E24 standard
• DO-41 Glass sealed package

APPLICATIONS

Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc. MAXIMUM RATINGS (T A = 25°°°°C) Power Dissipation (P) 1 W (See Fig. 1) Forward Current (IF) 200 mA Junction Temperature (Tj) 175 °C Storage Temperature (Tstg) −65 to +175°C Peak Reverse Power (PRSM ) See Fig. 9 PACKAGE DIMENSIONS (Unit: mm) φ 0.8 Cathode indication φ 3.0 MAX. 25 MIN.5 MAX.25 MIN.

Data Sheet D13936EJ3V0DS002 RD2.0F to RD82F ELECTRICAL CHARACTERISTICS (T A = 25 ±±±± 2°°°°C) Type Number Zener Voltage VZ (V) Note 1 Dynamic Impedance ZZ (Ω ) Note 2 Reverse Current IR (µA) Suffix MIN. MAX. I Z (mA) MAX. I Z (mA) MAX. V R (V) B1 4.03 4.28 B2 4.15 4.41RD4.3F B B3 4.28 4.55 40 15 40 20 1.0 B1 4.41 4.65 B2 4.53 4.78RD4.7F B B3 4.66 4.91 40 10 40 20 1.0 B1 4.79 5.05 B2 4.95 5.22RD5.1F B B3 5.10 5.38 40 8 40 20 1.0 B1 5.28 5.56 B2 5.46 5.75RD5.6F B B3 5.65 5.95 40 8 40 20 1.5 B1 5.76 6.14 B2 5.98 6.33RD6.2F B B3 6.17 6.52 40 6 40 20 3.0 B1 6.35 6.71 B2 6.55 6.90RD6.8F B B3 6.74 7.10 40 6 40 20 3.5 B1 6.93 7.33 B2 7.17 7.55RD7.5F B B3 7.39 7.80 40 4 40 20 4.0 B1 7.58 8.03 B2 7.87 8.28RD8.2F B B3 8.12 8.54 40 4 40 20 5.0 B1 8.34 8.80 B2 8.64 9.08RD9.1F B B3 8.91 9.38 40 6 40 20 6.0 B1 9.16 9.67 B2 9.50 9.99RD10F B B3 9.83 10.40 40 6 40 10 7.0 B1 10.22 10.75 B2 10.54 11.09RD11F B B3 10.87 11.43 20 8 20 10 8.0 B1 11.19 11.77 B2 11.50 12.09RD12F B B3 11.80 12.41 20 8 20 10 8.0

Data Sheet D13936EJ3V0DS00 3 RD2.0F to RD82F Type Number Zener Voltage VZ (V) Note 1 Dynamic Impedance ZZ (Ω ) Note 2 Reverse Current IR (µA) Suffix MIN. MAX. I Z (mA) MAX. I Z (mA) MAX. V R (V) B1 12.19 12.85 B2 12.63 13.30RD13F B B3 13.11 13.83 20 10 20 10 10 B1 13.55 14.28 B2 14.05 14.77RD15F B B3 14.52 15.26 20 10 20 10 11 B1 14.98 15.75 B2 15.44 16.23RD16F B B3 15.89 16.71 20 12 20 10 12 B1 16.37 17.27 B2 17.03 17.91RD18F B B3 17.64 18.55 20 12 20 10 13 B1 18.26 19.21 B2 18.93 19.91RD20F B B3 19.59 20.84 20 14 20 10 15 B1 20.45 21.51 B2 21.10 22.18RD22F B B3 21.75 22.86 10 14 10 10 17 B1 22.44 23.59 B2 23.17 24.36RD24F B B3 23.90 25.14 10 16 10 10 19 B1 24.63 26.10 B2 25.70 27.12RD27F B B3 26.72 28.43 10 16 10 10 21 B1 27.43 29.09 B2 28.64 30.10RD30F B B3 29.57 31.26 10 18 10 10 23 B1 30.35 31.97 B2 31.49 33.06RD33F B B3 32.39 34.15 10 18 10 10 25 B1 33.24 34.94 B2 34.26 36.01RD36F B B3 35.19 37.01 10 20 10 10 27 B1 36.11 38.00 B2 37.14 39.04RD39F B B3 38.13 40.80 10 20 10 10 30 R D 4 3 F B 4 04 51 05 01 0 5 3 3 R D 4 7 F B 4 44 91 05 01 0 5 3 6 R D 5 1 F B 4 85 41 05 01 0 5 3 9 R D 5 6 F B 5 36 01 05 01 0 5 4 3 R D 6 2 F B 5 86 61 05 01 0 5 4 7 R D 6 8 F B 6 47 21 07 01 0 5 5 2 R D 7 5 F B 7 07 91 09 01 0 5 5 7 R D 8 2 F B 7 78 71 09 01 0 5 6 3 Note 1. Tested with pulse (40 ms). 2. ZZ is measured at IZ given an very small A.C. Current Signal.

Data Sheet D13936EJ3V0DS004 RD2.0F to RD82F TYPICAL CHARACTERISTICS (T A = 25°°°°C) Fig. 1 P-TA RATING Fig. 2 I Z-VZ CHARACTERISTIC 1.2 1.0 0.8 0.6 0.4 0.2 200 40 60 80 100 120 140 160 180 200 Ambient Temperature T A (°C) = 20 mm 10 mm 5 mm Power Dissipation P (W) Fig. 3 IZ-VZ CHARACTERISTIC Fig. 4 I Z-VZ CHARACTERISTIC RD39F RD36F RD33F RD30F RD27F RD24F RD22F RD20F RD18F RD15F 40 35 30 25 20 15 1000 800 600 400 200 Zener Current IZ (mA) Zener Voltage VZ (V) IF (mA) TA = 25°C TYP. VF (V) 0.5 1.0 PMAX. Fig. 5 γγγγZ-VZ CHARACTERISTIC Fig. 6 γγγγZ-VZ CHARACTERISTIC 0.1 0.08 0.06 0.04 0.02 −0.02 −0.04 −0.06 −0.08 −16 −24 −32 −40 VZ − Temperature Coefficiency γ Z (%/°C) VZ − Temperature Coefficiency γ Z (mV/°C) Zener Voltage VZ (V) %/°C mV/°C 0 4 8 1 21 62 0 2 42 83 23 64 04 4 RD15F RD12F RD10F RD8.2F RD7.5F RD6.8F RD6.2F RD5.1F RD4.7F RD3.9F RD3.3F RD2.7F RD2.0F VZ (V)Zener Current IZ (mA) Zener Voltage VZ (V) 15 10 5 IF (mA) TA = 25°C TYP. 120 160 200 240 600 400 200 0 0.5 1.0 RD82F RD68F RD62F RD56F RD51F RD47F RD43F PMAX. 600 400 200 Zener Current IZ (mA) Zener Voltage VZ (V) 70 60 50 408090100 IF (mA) TA = 25°C TYP. RD75F VF (V) 0 0.5 0.1 0.09 0.08 0.07 0.06 120 100 VZ − Temperature Coefficiency γ Z (mV/°C) VZ − Temperature Coefficiency γ Z (%/°C) Zener Voltage VZ (V) %/°C mV/°C 40 50 60 70 80 90

Data Sheet D13936EJ3V0DS00 5 RD2.0F to RD82F Fig. 7 ZZ-IZ CHARACTERISTIC Fig. 8 R th-S CHARACTERISTIC Dynamic Inpedance ZZ (Ω ) Zener Current IZ (mA) TA = 25°C TYP.RD6.8F RD2.0F RD10F RD39F RD82F RD4.3F RD5.6FRD7.5F RD15F RD6.2F RD20F RD5.1F RD6.8FRD6.2F RD7.5F RD10F 1 000 100 0.1 10 1001 RD15F Fig. 9 PRSM RATING Fig. 11 POWER DISSIPATION NOMOGRAM Peak Reverse Power PRSM (W) Time t (s) PRSM TA = 25°C Non- Repetitive 10 000 1 000 100 t 10 µ 100 µ 1 m 10 m 100 m 1 Fig. 10 Zth CHARACTERISTIC 150°C/W Transient Thermal Impedance Zth (°C/W) Time t (s) 1 000 100 0.1 100 m10 m1 m 1 10 100 Thermal Resistance Rth (°C/W) Size of PC Board S (mm2) 240 200 160 120 20 40 60 80 100 Junction to ambient (Thickness = 0.035 mm) = 5 mm 10 mm 20 mm S Heat −Sink Heat −Sink (incn) Lead Length (mm) Heat-Sink Temperature TH (°C) Power Dissipation P (W) (mm) 1.0 1.5 1.0 0.9 0.8 0.7 0.6 0.5 0.4 105 115 125 135 145

Data Sheet D13936EJ3V0DS006 RD2.0F to RD82F [MEMO]

Data Sheet D13936EJ3V0DS00 7 RD2.0F to RD82F [MEMO]

RD2.0F to RD82F

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