RC2 DSK | Alldatasheet
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Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.012 ounces, 0.34 grams Mounting position: Any MA XIMUM RA TINGS A ND ELECTRICA L CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard rectified current 9.5mm lead length, @T A =75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J =125 Maximum instantaneous forw ard voltage @ 0.2 A V F V Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 M axim um reverse recovery tim e (Note1) t rr ns Typical junction capacitance (Note2) C J pF Typical thermal resistance (Note3) R θJA Operating junction temperature range T J Storage temperature range T STG NOTE:1. Measured with I F =0.5A, I R =1A, I rr =0.25A. I FSM 2.0 20.0 RC2 2000 1400 2000 FAST RECOVERY RECTIFIER I F(AV) The plastic material carries U/L recognition 94V-0 3. Thermal resistance f rom junction to ambient. A 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. -55----+150 -55----+150 1000 10.0 300.0 I R RC2(Z) DO - 41 Easily cleaned with Freon,Alcohol,Isopropanol A VOLTAGE RANGE: 2000 V CURRENT: 0.2 A 0.2 A Dimensions in millimeters www.diode.kr Diode Semiconductor Korea
0.05 0.1 0.2 0.15 0.25 Single Phase Half Wave 60Hz Resistive or Inductive Load 15012510075 T J =25 Pulse Width=300 µ S 0.01 0.1 0.2 0.3 -1.0A -0.25A +0.5A t rr 1cm PULSE GENERATOR (NOTE2) D.U.T. N.1. N.1. OSCILLOSCOPE (NOTE 1) (+) 50VDC (APPROX) (-) N.1. (-) (+) 51 0 0 50 TJ=125 8.3ms Single Half Sine-Wave AMPERES AMPERES AMPERES JUNCTION CAPACITANCE,pF NUMBER OF CYCLES AT 60Hz REVERSE VOLT AGE,VOLT S FIG.4-- TYPICAL JUNCTION CAPACITANCE 2. RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O AVERAGE FORWARD CURRENT FIG.3 -- TYPICAL FORWARD CHARACTERI STIC N OTE S:1.R ISE TIM E =7ns M AX. IN P U T IM P E D AN C E =1M .22pF FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM FIG.2 -- TYPICAL FORWARD DERATING CURVE FIG.4-- PEAK FORWARD SURGE CURRENT INSTANTANEOUS FORWARD CURRENT PEAK FORWARD SURGE CURRENT RC2 SET TIM E BASE FOR 50/100 ns /cm AMBIENT T EMPERAT URE, INSTANTANEOUS FORWARD CURRENT, VOLTS T J =25 f=1MHz .4 1.0 2 100 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea