MAP7103 MGCHIP | Alldatasheet

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Technical content

Features

  • 4.5A, 0.1Ω, 45V Power MOSFET
  • 8.6V to 15.9V Input Supply Voltage
  • Fixed 500kHz Switching Frequency
  • Input Supply Under Voltage Lockout
  • Programmable Soft-Start
  • VOUT Over Voltage Protection
  • Over Temperature Protection
  • Internal Current Limit
  • Thin 10-Lead TDFN Package
  • RoHS Compliant and Halogen Free Application
  • GIP TFT-LCD Panels General Description The MAP7103 is a high performance switching boost converter that provides a regulated supply voltage for active matrix thin film transistor(TFT) liquid crystal displays(LCDs) The MAP7103 incorporates current mode, fixed- frequency, pulse width modulation(PWM) circuit with a build in N-MOSFET to achieve high efficiency and fast transient response. The MAP7103 is available in a TDFN-10L 3x3mm2 package

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Block Diagram Figure 1) Block Diagram Typical Application Circuit Bill of Materials item Part Number Manufacturer Description Qty. IC MAP7103 Magnachip 3A, 16V Step-Up Converter 1 L1 RLF7030-4R7M TDK 4.7uH, 3.5A, 26mΩ, ±20% 1 D1 B530C Diodes 30V, 5A, SMC 1 CIN CL21A106KAFN3NE Samsung 10uF, 25V, 2012, X5R 2 COUT CL21A106KAFNNNE Samsung 10uF, 25V, 2012, X5R 3 C1 CL10B331KB8NNNC Samsung 330pF, 50V, 1608, X5R 1 C2/C3 CL10A105KA8NNNC Samsung 1uF, 25V, 1606, X5R 2 CSS CL10B333JB8NNNC Samsung 33nF, 50V, 1608, X5R 1 R1 RC1608J124CS Samsung 120kΩ, 1/10W, ±5% 1 R2 RC1608J103CS Samsung 10kΩ, 1/10W, ±5% 1 R3 RC1608J104CS Samsung 100kΩ, 1/10W, ±5% 1 LX Chip Enable 4,5,11(Exposed Pad) VIN EN GND COMP SS FB VOUT 330pF VIN 12V 33nF Css VOUT 16.25V 100kΩ 120kΩ 10kΩ 10uF X 3 COUT 1uF 10uF X 2 CIN 1uF MAP7103 4.7uH L1 D1 Control and Driver Logic Soft Start Current Sense Protection LX OTP Summing Comparator 1.25V Slope CompensationOscillator Clock OVP VDD Error Amplifier SS LX PGND VIN EN COMP FB VOUT

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Pin Configuration Pin Definitions Pin# Name Description 1 COMP Compensation Pin for Error Amplifier. Connect a series RC from COMP to GND. 2 FB Feedback. The FB regulation voltage is 1.25V nominal. Connect an external resistive voltage divider between the step-up regulator’s output(VOUT) and GND, with the center tap connected to FB. Place the divider close to the IC and minimize the trace area to reduce noise coupling. 3 EN Chip Enable. Drive EN low to turn off the Boost 4,5,11 (Exposed Pad) GND Ground. The Exposed Pad must be soldered to a large PCB and connected to GND for maximum power dissipation. 6,7 LX Switch. LX is the drain of the internal MOSFET. Connect the inductor/rectifier diode junction to LX and minimize the trace area for lower EMI. 8 VOUT Boost Converter Over Voltage Protection input. Bypass VOUT with a minimum 1uF ceramic capacitor directly to GND. 9 VIN Supply Input. Bypass VIN with a minimum 1uF ceramic capacitor directly to GND. 10 SS Soft-Start Control. Connect a soft-start capacitor(CSS) to this pin. The soft-start capacitor is charged with a constant current of 5uA. The soft-start capacitor is discharged to ground when EN is low Absolute Maximum Ratings Parameter Value Unit LX, VOUT to GND -0.3V to 28V V VIN, EN, SS, FB to GND -0.3V to 16.5V V COMP to GND -0.3V to 6.0V V Junction Temperature Range -40 to +150 ℃ Storage Temperature Range -65 to +150 ℃ Package Thermal Resistance (JA) 65.9 ℃/W Power Dissipation (Ta=25℃) 1.517 W Human Body Model(HBM) 2 kV Machine Model(MM) 200 V Charged Device Model (CDM) 700 V Note: Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Recommended Operating conditions Ambient Temperature Range -40 to +85 ℃ Junction Temperature Rnage -40 to +125 ℃ Exposed PAD COMP FB EN GND GND LX VOUT VIN SS LX 5 6 3mm x 3mm Ultra thin DFN-10 (Top view)

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter

Electrical Characteristics

VIN=VEN=12V, VOUT=16.25V, Typical values are at TA=25℃(unless otherwise noted.) Symbol Parameter Test Conditions Min. Typ. Max. Unit General Section VIN Input Voltage Range 8.6 15.9 V VUVLO Under Voltage Lock Out Rising Threshold voltage 8.0 8.3 8.6 V Hysteresis 0.6 0.8 1.0 V IQ(ON) Quiescent Current VFB=1.3V, Not Switching 1.0 1.2 mA REN Enable Pull down resistance 0.5 1.0 1.5 MΩ TSD Thermal Shutdown Temperature (Note1) 150 ℃ TSD_HYS Thermal Shutdown Hysteresis (Note1) 10 ℃ VOVP VOUT Over Voltage Threshold VOUT Rising 18 19 20 V Oscillator fOSC Oscillator Frequency 450 500 550 kHz DMAX Maximum Duty Cycle 81 90 99 % Error Amplifier VREF FB Regulation Voltage 1.2375 1.25 1.2625 V IFB FB Input Bias Current 100 nA VFB_LINE FB Line Regulation 0.05 0.2 V Gm Transconductance ΔI=±2.5uA at VCOMP=1V 80 100 120 uA/V AV Voltage Gain (Note1) FB to COMP 700 V/V N-MOSFET ILIM Current Limit (Note1) 4.5 A RDS(ON) On-Resistance (Note1) 100 250 mΩ ILEAK Leakage Current VLX=24V 10 uA RCS Current Sense Transresistance (Note1) 0.25 V/A Soft-Start Charge Current 3.5 5.0 6.5 uA Control Inputs VIH Enable Logic High Voltage 1.4 V VIL Enable Logic Low Voltage 0.7 Note1) Guaranteed by design, characterization and correlation with process controls, Not fully tested in production

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Operation The MAP7103 provided a regulated supply voltage for panel source driver ICs. The MAP7103 uses a constant frequency, peak current mode PWM(Pulse Width Modulation) boost regulation architecture to regulate the feedback voltage. At the beginning of each cycle, the N-channel MOSFET switch is turned on, forcing the inductor current to rise. The current at the source of the switch is internally measured and converted to a voltage by the current sense amplifier. That voltage is compared to the error voltage at COMP . The voltage at the output of the error amplifier is an amplified version of the difference between the 1.25V reference voltage and the feedback voltage voltage. When these two voltage are equal, the PWM comparator turns off the switch forcing the inductor current to the output capacitor through the external rectifier. This causes the inductor current to decrease. The peak inductor current is controlled by the voltage at COMP , which in turn is controlled by the output voltage. Thus the output voltage is regulated by the inductor current to satisfy the load. The use of current mode regulation improves transient response and control loop stability.

Application Information

The MAP7103 provides soft-start function to minimize the inrush current at the input. This prevents faults tripping of the input voltage at startup due to input current overshoot. When powered on, a 5uA internal constant current charges an external capacitor at SS pin. As the SS capacitor is charged, the voltage at SS rises. The MAP7103 internally clamps the voltage at COMP to 700mV above the voltage at SS. The soft-start ends when the voltage at SS reaches 1.25V. This limits the inductor current at startup, forcing the input current to rise slowly to the current required to regulate the output voltage. The soft-start period is determined by the equation : tSS = CSS x V / I where CSS is the soft-start capacitor from SS to GND, V is reference voltage and I is charging current If CSS=33nF, the internal soft-start function will be turned on and period time is approximately 8ms. Setting the Output Voltage The regulated output voltage is shown as the following equation where VREF=1.25V (typ.) The recommended voltage for R2 should be at least 10kΩ Selecting the input Capacitor Lower ESR ceramic capacitor are recommended for input capacitor applications. Low ESR will reduce the Input voltage ripple caused by switching operation. A 10uF capacitor is sufficient for most applications. Selecting the Output Capacitor The output capacitor is required to maintain the DC output voltage. Low ESR capacitor are preferred to keep the output voltage ripple to a minimum. The characteristic of the output capacitor also affects the stability of the regulation control system. The output voltage ripple is shown as the following equation: where VRIPPLE is the output ripple voltage, VIN and VOUT are the DC Input and output voltages respectively, ILOAD is the load current, fSW is the switching frequency, and COUT is the capacitance of the output capacitor

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Choose an output capacitor to satisfy the output ripple and load transient requirements of the design. A 4.7uF – 22uF ceramic capacitor is suitable for most applications Loop Compensation The output of the transconductance error amplifier(COMP) is used to compensate the regulation control system. The system uses two poles and one zero to stabilize the control loop. The poles are fP1 set by the output capacitor COUT and load resistance and fP2 set by the compensation capacitor C1. The zero fZ1 is set by the compensation capacitor C1 and the compensation resistor R3. For typical application, VIN=12V, VOUT=16.25V, COUT=10uFx3EA, L1=4.7uH, while the recommended value for compensation is as follows : R3 = 100kohm, C1=330pF Selecting the Inductor The inductor is required to force the higher output voltage while being driven by the input voltage. A larger value Inductor results in less ripple current that results in lower peak inductor current, reducing stress on the internal N - channel switch. However, the larger series resistance, and/or lower saturation current. A 4.7uF Inductor is recommended for most 500kHz applications. As a general rule, the peak-to-peak ripple current range is 20% to 40% of the maximum input current. Make sure that the peak inductor current is below 75% of the current limit at The operating duty cycle to prevent loss of regulation due to the current limit. Also make sure that the inductor does not saturate under the worst-case load transient and startup conditions. Calculate the required inductance value by the equation Where ILOAD(MAX) is the maximum load current, ΔI is the peak-to-peak inductor ripple current, and η is efficiency Selecting the Diode The output rectifier diode supplies current to the inductor when the internal MOSFET is off. Schottky diodes are chosen for their low forward voltage drop and fast switching speed. The diode should be rated for a reverse voltage equal to or greater than the output voltage used. The average current rating must exceed the average output current and the peak current rating must be greater than the peak inductor current.

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter Package Dimensions

Datasheet Version 1.0 July 2015. Revision 1.0 MagnaChip Semiconductor Ltd. MAP7103– 3A, High Voltage Boost Converter

REVISION HISTORY

2014.08.11 0.0 Initial Release. 2014.10.09 0.1 Update to Display Spec 2014.10.20 0.2 Update to Package Information Enable Pull-down Resistance : 500kΩ  1MΩ 2014.11.19 0.4 Preliminary Datasheet 2014.12.19 0.5 Operating description ( Page 5 ~ 6) 2015.05.27 0.8 Add to graph 2015.06.16 0.9 Change Logic Threshold Voltage level(VIH & VIL) 2015.06.30 0.10 Update Package thermal Resistance 2015.07.03 1.00 Update Absolute maximum ratings(Junction Temperature)