RC05 EDI | Alldatasheet
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FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER RC SMALL SIZE LOW LEAKAGE HIGH TEMPERATURE STABILITY HIGH SURGE CAPABILITY ELECTRICAL CHARACTERISTICS(at T =25 C Unless Otherwise Specified)A NOTE: Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C Average Rectif ied Forward Current @ 50 oC, IO 1 Amp Max. Peak Surge Current , IFSM (8.3 ms) 50 Amp Max. Forward Voltage Drop @ 1 Amp, VF 1.4Volts Max. DC Reverse Current @ P RV and 25 oC, IR 1 Max. DC Reverse Current @ PRV and100 oC, IR 50 Ambient Operating Temperature Range, TA -55 oC to +150 oC Storage Temperature Range, TSTG -55 oC to +175 oC EDI Type PRV Volts Maximum Reverse RECOVERY TIME IN NANOSECONDS (Fig.4) RC05 50 200 RC10 100 200 RC20 200 200 RC40 400 200 RC60 600 200 RC80 800 200 RC100 1000 200 A A o Trr (Reverse Recovery time), Fig. 4 200 nanosec Max 125nanosec Typical
1.0A 0.5A TRR ZERO REFERENCE 0.25A R R1, 2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV. I KC REP.RATE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR 1.0 MIN. .380 MAX. 1.0 MIN. 100 0 25 50 75 100 125 150 FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT 100 1 2 3 4 5 6 7 9 10 20 30 40 50 608 CYCLES(60 Hz) RC FIG.3 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. AMBIENT TEMPERATURE O ( C) .030 .033 DIA. .160 MAX. TEST CIRCUIT FIG.4 TYPICAL REVERSE RECOVERY WAVEFORM EDI reserves the right to change these specifications at any time whthout notice. 0.1SEC 1.0SEC % MAXIMUM SURGE PULSE GENERATOR D.U.T. SCOPER2
1 OHM
50 OHM
Ee-mail:sales@edidiodes.com Wwebsite:http:// www.edidiodes.com* % RATED FWD CURRENT