RBV600D NJSEMI | Alldatasheet
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, U na. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIERS RBV25 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 RBV600D - RBV61OD PRV: 50-1000 Volts lo : 6.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.80 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 6.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR IRJH) REOC Tj TSTG RBV RBV RBV RBV GOOD 601D 602D 604D 50 100 200 400 35 70 140 280 50 100 200 400 6.0 300 373 1.0 200 2.2 - 40 to + 1 - 40 to + 1 RBV 606D 600 420 600 RBV 608D 800 560 800 RBV 61 OD 1000 700 1000 UNIT V V V A A A2s V MA uA
- c/w N,l Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N,l Semi-Conduclors is believed to he both accurate and reliable at the time of going to press. However. N.I Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT I- K> Z> LU O OL li o: i- 2.0 — HEA 2.6" (6.5c T-SINK x 1 4"x m x 3.5 0.06" T ;m x 0. 1 V NO, Tc
- IK 5cm) Al 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) LU O en o; LU 3 OL to LU o: 5 < < UJ O CL 100 8.3 _JE X X "S| s s ms SINGLE HA DEC METHOD 1 1 1 \\F SINE WAV s D°( II ' , ... 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE LU LU O D I O
- Pulse Width =300^ 1 % Duty Cycle FORWARD VOLTAGE, VOLTS 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%)