RBV600_V01 EIC | Alldatasheet
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RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 V AC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.80 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 600 RBV 601 RBV 602 RBV 604 RBV 605 RBV 606 RBV
608 RBV 610 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 500 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 350 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 500 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I 2tA 2S Maximum Forward Voltage per Diode at IF = 3.0 A V F V Maximum DC Reverse Current Ta = 25 °C IR μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) μA Typical Thermal Resistance (Note 1) RθJC °C/W Operating Junction Temperature Range TJ °C Storage Temperature Range TSTG °C Notes : Page 1 of 2 Rev. 06 : May 6, 2013 - 40 to + 150 - 40 to + 150 1.0 200 RATING AIFSM 200 6.0 8.0 RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 Ф 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3 www.eicsemi.com
RATING AND CHARACTERISTIC CURVES ( RBV600 - RBV610 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 06 : May 6, 2013 HEAT-SINK MOUNTING, Tc (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 4.0 3.0 2.0 1.0 6.0 100 10 1.0 160 240 120 0.1 0.01 0.0 1.0 0.1 10 1400 20 40 60 12 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Pulse Width = 300 μs 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C 5.0 200 10 20 601 2 4 6 40 10 TJ = 100 °C TJ = 25 °C TJ = 25 °C www.eicsemi.com