RBV600 EIC | Alldatasheet
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RBV600 - RBV610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 V DC * Ideal for printed circuit board * Very good heat dissipation MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 600 RBV 601 RBV 602 RBV 604 RBV 606 RBV 608 RBV
610 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 200 Amps. Current Squared Time at t < 8.3 ms. I2t 64 A2S Maximum Forward Voltage per Diode at IF = 3.0 Amps. VF 1.0 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) RθJC 8.0 °C/W Operating Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C UPDATE : MARCH 6, 2000 RATING RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV600 - RBV610 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS HEAT-SINK MOUNTING, Tc (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 4.0 3.0 2.0 1.0 6.0 100 10 1.0 160 240 120 0.1 0.01 0.01 1.0 0.1 100 1400 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Pulse Width = 300 µs 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C 5.0 200 10 20 601 2 4 6 40 100 TJ = 100 °C TJ = 25 °C TJ = 25 °C