RBV600D_V01 EIC | Alldatasheet

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RBV600D - RBV610D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 6.0 Amperes FEATURES : * High current capab ility * High surge current capab ility * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 V AC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.80 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 600D RBV 601D RBV 602D RBV 604D RBV 606D RBV 608D RBV 610D UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 6.0 A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I 2tA 2s Maximum Forward Voltage per Diode at IF = 6.0 A V F 1.0 V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 μA Typical Thermal Resistance (Note 1) RѲJC 2.2 °C/W Operating Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Page 1 of 2 Rev. 08 : Jan 10, 2022 RATING IFSM 300 A 373 RBV25 Dimensions in millimeters C3 4.6 ± 0.2 3.6 ± 0.2 Φ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0 . 2 7.5 ±0.2 13.5 ± 0.3 www.eicsemi.com

RATING AND CHARACTERISTIC CURVES ( RBV600D - RBV610D ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 08 : Jan 10, 2022 HEAT-SINK MOUNTING, Tc (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 4.0 3.0 2.0 1.0 6.0 100 10 1.0 200 300 150 100 0.1 0.01 0.01 1.0 0.1 100 1400 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES Pulse Width = 300 μs 1 % Duty Cycle 5.0 250 10 20 601 2 4 6 40 100 TJ = 100 °C TJ = 25 °C TJ = 25 °C 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C www.eicsemi.com