RBV600 NJSEMI | Alldatasheet
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^£,mi-Conductoi LProducti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. RBV600-RBV610 PRV: 50-1000 Volts lo : 6.0 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 7.80 grams (Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SILICON BRIDGE RECTIFIERS RBV25 N o a \\9 ± 0.2 H I* — , . <J> 3.2 ± 0.1 h + is r ||| fl ro III III J 1 ±0.2 ±0.2 l/l o 1.0 ±0.1 2.0 ± 0.2 0.7 ± 0.1 ' t Dimensions in millimeters RATING | Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C , Peak Forward Surge Current Single half sine wave ! Superimposed on rated load (JEDEC Method) ; Current Squared Time at t < 8.3 ms. i Maximum Forward Voltage per Diode at IF = 3.0 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range ! Storage Temperature Range SYMBOL RBV ! RBV i RBV ! 600 ! 601 602 VRRM : 50 100 200 VRMS 35 I 70 140 VDC : 50 100 200 Ip(AV) IFSM "ft VF IR |R(H) R6JC : TJ • TSTG RBV RBV i RBV RBV __.,..„ 604 605 j 606 608 RBV61° 400 500 | 600 ! 800 1000 280 i 350 420 '. 560 700 400 500 ! 600 800 | 1000 6.0 200 64 i 1.0 200 8.0 ; -40 to +150 - 40 to + 1 50 UNIT V V V A A A2S V HA uA °CA/V °c : Notes : NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both aecurate and reliable at the time ofgoing to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. N.I Semi-Conductors encourages customers to verily that datasheets are current before placing orders. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV600 - RBV610 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT O C a: i O \\K MOUNTING, Tc _(65crr 2.6"x 1 x 3,5cr 4" x 0 06" THK nx0.15cm)AI.- I
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FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 240 ,_.._ LU K O LU O GO Ct LU r> o: in m o UJ TJ X S 8 3 ms SINGLE HALF SINE WAVE JEDEC METHOD 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) 1 2 4 6 10 20 40 60 10 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PERCENT OF RATED REVERSE VOLTAGE, (%) 0,6 0,8 10 1.2 1,4 1,6 1.8 FORWARD VOLTAGE, VOLTS