RBV5000 NJSEMI | Alldatasheet
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, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 30 ± 0.3 RBV5000-RBV5010 PRV: 50-1000 Volts lo : 50 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.17 grams (Approximaly) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SILICON BRIDGE RECTIFIERS RBV25 3.9 ±0.2 4.9 ± 0.2 CD 3.2 ±0.1 -1.0 ±0.1 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ±0.2 0.7 ±0.1 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 25 A Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 1 00 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range , Storage Temperature Range SYMBOL VRRM VRMS VDC Ip(AV) IFSM I2t VF IR |R(H) R6JC TJ TSTG RBV RBV RBV RBV 5000 5001 5002 5004 50 100 200 400 35 70 140 280 50 100 200 : 400 400 660 1.1 200 1.5 - 40 to + 1 - 40 to +1 RBV 5006 600 420 600 RBV 5008 800 560 800 RBV 5010 1000 700 1000 UNIT V V V A A A2S V MA °C/W Note: 1. Thermal Resistance from junction to case with units mounted on heatsink. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES 1-' K) OJ Ji MI (Ji
3 O O O O o O
P.C. B SINE \\d Mounted with WAVE R-Load 75 100 125 150 175 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES o g 8 8 8 g 1 nsS X -t— Xs -t T, -s\\ 5
- )"( NGLE HALF SINE WAVE EDEC METHOD CASE TEMPERATURE, ( °C) 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 0.01 L 0.4 0.6 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 0.01 20 40 60 80 100 120 PERCENT OF RATED REVERSE VOLTAGE, (%) 140 FORWARD VOLTAGE, VOLTS