RBV5000_05 EIC | Alldatasheet
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RBV5000 - RBV5010 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 50 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 VDC * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximaly ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 5000 RBV 5001 RBV 5002 RBV 5004 RBV 5006 RBV 5008 RBV
5010 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55°C IF(AV) 50 A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I2t 660 A2S Maximum Forward Voltage per Diode at IF = 25 A VF 1.1 V Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W Operating Junction Temperature Range TJ 10 °C Storage Temperature Range TSTG - 40 to + 150 °C Note : 1. Thermal Resistance from junction to case with units mounted on heatsink. Page 1 of 2 Rev. 03 : September 9, 2005 RATING IFSM 400 A RBV25 Dimensions in millimeters C3 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV5000 - RBV5010 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : September 9, 2005 P.C. Board Mounted with SINE WAVE R-Load 100 10 1.0 400 600 300 200 100 0.1 0.01 0.01 1.0 0.1 100 1400 20 40 60 12 0PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C TJ = 100 °C TJ = 25 °C 500 10 20 601 2 4 6 40 10