RBV3500 EIC | Alldatasheet
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RBV3500 - RBV3510 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 35 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * High case dielectric strength of 2000 V DC * Ideal for printed circuit board * Very good heat dissipation MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 3500 RBV 3501 RBV 3502 RBV 3504 RBV 3506 RBV 3508 RBV
3510 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Current Tc = 55°C IF(AV) 35 Amps. Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 400 Amps. Current Squared Time at t < 8.3 ms. I2t 660 A2S Maximum Forward Voltage per Diode at IF = 17.5 Amps. VF 1.1 Volts Maximum DC Reverse Current Ta = 25 °C IR 10 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA Typical Thermal Resistance (Note 1) RθJC 1.5 °C/W Operating Junction Temperature Range TJ 10 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : 1. Thermal Resistance from junction to case with units mounted on heatsink. UPDATE : AUGUST 3, 1998 RATING RBV25 Dimensions in millimeters 4.9 ± 0.2 3.9 ± 0.2 ∅ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS P.C. Board Mounted with SINE WAVE R-Load 100 1.0 400 600 300 200 100 0.1 0.01 0.01 1.0 0.1 100 1400 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT AMPERESFORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C TJ = 100 °C TJ = 25 °C 500 10 20 601 2 4 6 40 100