RBV3500 NJSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
, O ne, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 RBV3500-RBV3510 PRV: 50-1000 Volts lo : 35 Amperes FEATURES: * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Pb/RoHSFree MECHANICAL DATA: * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight: 8.17 grams (Approximaly) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SILICON BRIDGE RECTIFIERS RBV25 10 7.5 7.5 ±0.2 ±0.2 ±0.2 2.0 ± 0.2- 0.7 ±0.1 Dimensions in millimeters RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55°C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage per Diode at IF = 17.5 A , Ta = 25 ° C atlF = 17.5A,Ta = l25°C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC |F(AV) IFSM I2t \\/c IR |R(H) R6JC TJ TSTG RBV RBV RBV RBV 3500 3501 3502 3504 50 100 200 400 35 70 140 280 50 100 200 400 400 660 1.1 0.9 200 1.5 - 40 to + 1 - 40 to + 1 RBV 3506 600 420 600 RBV 3508 800 560 800 RBV 3510 1000 700 1000 UNIT V V V A A2S MA I ^ °C/W Note: 1 Thermal Resistance from junction to case with units mounted on heatsink. Quality Semi-Conductors
RATING AND CHARACTERISTIC CURVES ( RBV3500 - RBV3510 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT AMPERES 0 5 S S £ 3 8 — • PC. Board M SINE WAVEF \\d with <-Load I , T " 25 50 75 100 125 150 1 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES 8 8 ° § 8 1 XN I --- Tj s \\ 5 X s 8,3 ms SINGLE HALF SINE WAVE JEDEC METHOD 4 6 10 20 L t "I' I xs 60 1 CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) FORWARD VOLTAGE, VOLTS