RBV2500_V01 EIC | Alldatasheet
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Technical content
SILICON BRIDGE RECTIFIERSRBV2500 - RBV2510 PRV : 50 - 1000 Volts Io : 25 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Ideal for printed circuit board * Very good heat dissipation * Moisture Sensitivity Level 1 (Unlimited) * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-0 rate flame retardant * Terminals : Plated lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 8.17 grams ( Approximately ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL RBV 2500 RBV 2501 RBV 2502 RBV 2504 RBV 2506 RBV 2508 RBV
2510 UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc = 55C IF(AV) 25 A Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. I2t 375 A2S Maximum Forward Voltage per Diode at IF = 12.5 A VF 1.1 V Maximum DC Reverse Current Ta = 25 C IR 10 mA at Rated DC Blocking Voltage Ta = 100 C IR(H) 200 mA Typical Thermal Resistance (Note 1) RqJC 1.45 C/W Mounting Torque (Recommended torque :0.5 N.m) TOR N.m Operating Junction Temperature Range TJ - 40 to + 150 C Storage Temperature Range TSTG - 40 to + 150 C Notes : Page 1 of 2 Rev. 07 : December 15, 2017 RATING IFSM 300 A 0.8 RBV25 Dimensions in millimeters 4.9 ± 0.2 3.9 ± 0.2 Φ 3.2 ± 0.1 11 ± 0.2 17.5 ± 0.5 20 ± 0.3 0.7 ± 0.1 1.0 ± 0.1 2.0 ± 0.2 30 ± 0.3 7.5 ±0.2 ±0.2 7.5 ±0.2 13.5 ± 0.3
RATING AND CHARACTERISTIC CURVES ( RBV2500 - RBV2510 ) FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK RECTIFIED CURRENT FORWARD SURGE CURRENT 0 25 50 75 100 125 150 175 CASE TEMPERATURE, ( C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE PER DIODE FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 07 : December 15, 2017 100 10 1.0 200 300 150 100 0.1 0.01 0.01 1.0 0.1 100 140 0 20 40 60 120 PERCENT OF RATED REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES TJ = 25 °C Pulse Width = 300 ms 1 % Duty Cycle 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD TJ = 50 °C TJ = 100 °C TJ = 25 °C 250 10 20 60 1 2 4 6 40 100 HEAT-SINK MOUNTING, Tc 5" x 6" x 4.9" THK. (12.8cm x 15.2cm x 12.4cm) Al.-Finned plate