RBV25005 DSK | Alldatasheet
Document overview
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Technical content
30± 0.3 20± 0.3 φ3. 2 ± 0 .1 5 2.4± 0.2 2.2± 0.2 1.0± 0.1 10± 0.2 7.5± 0.2 7.5± 0.2 4.0± 0.2 5.5± 0.2 3.7± 0.2 4.7± 0.25 0.8± 0.15 11.1± 0.2 17.7± 0.5 2.8± 0.2
FEATURES
Surge overload rating to 200 Am peres peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RBV 2502 RBV 2504 RBV 2506 RBV 2508 RBV
2510 UNITS
Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T A =25 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 12.5 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Typical junction capacitance per element C J pF Typical thermal resistance R θJC Operating junction temperature range T J Storage temperature range T STG RBV25005 --- RBV2510 RBV 25005 RBV 2501 50 100 1.1 2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink. 0.2 A 10.0 I F(AV) 25.0 A SILICON BRIDGE RECTIFIERS 300 I FSM KBJ 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Lead solderable per MIL-STD-202 method 208 Polarity:Symbols molded on body Mounting position: Any MECHANCAL DATA Weight:0.23 ounces, 6.6 grams NOTES:1.Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC - 55 ---- + 150 - 55 ---- + 150 I R 0.6 Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 1.6.2 1.4 100 .1 .2 .4 1.0 2 4 10 20 40 1 100 120 140 160 200 T J =25 f=1MHz 05 0 1 0 0 150 11 0 0 375 150 300 8.3ms Single Half Sine Wave T J =150 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL JUNCTION CAPACITANCE AMPERES RBV25005 --- RBV2510 NUMBER OF CYCLES AT 60H Z AMBIENT T EMPERAT URE, FIG.2 -- FORWARD DERATING CURVE FIG.1 -- PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, INST ANT ANEOUS FORWARD VOLT AGE, VOLT S REVERSE VOLT AGE,VOLT S www.diode.kr Diode Semiconductor Korea