RBV15005 DSK | Alldatasheet
Document overview
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Technical content
30± 0.3 20± 0.3 φ3. 2 ± 0 .1 5 2.4± 0.2 2.2± 0.2 1.0± 0.1 10± 0.2 7.5± 0.2 7.5± 0.2 4.0± 0.2 5.5± 0.2 3.7± 0.2 4.7± 0.25 0.8± 0.15 11.1± 0.2 17.7± 0.5 2.8± 0.2
FEATURES
Surge overload rating to 200 Am peres peak Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique results in inexpensive product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. RBV 1502 RBV 1504 RBV 1506 RBV 1508 RBV
1510 UNITS
Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Max imum DC bloc king v oltage V DC 200 400 600 800 1000 V Maximum average forw ard Output current @T C = 55 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage at 7.5 A V F V Maximum reverse current @T A =25 μA at rated DC blocking voltage @T A =100 mA Typical junction capacitance per element C J pF Typical thermal resistance R θJC Operating junction temperature range T J Storage temperature range T STG NOTES:1.Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC - 55 ---- + 150 - 55 ---- + 150 I R 1.9 Lead solderable per MIL-STD-202 method 208 Polarity:Symbols molded on body Mounting position: Any MECHANCAL DATA Weight:0.23 ounces, 6.6 grams SILICON BRIDGE RECTIFIERS 300 I FSM KBJ 100 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 15.0 A 10.0 I F(AV) 15.0 A RBV150005 --- RBV1510 RBV 15005 RBV 1501 50 100 1.1 2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink. 0.2 A Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
.01 0.1 1.0 1.6.2 1.4 100 .1 .2 .4 1.0 2 4 10 20 40 1 100 120 140 160 200 T J =25 f=1MHz 0 05 0 1 0 0 1 5 0 11 0 0 8.3ms Single Half Sine Wave T J =150 150 300 375 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL JUNCTION CAPACITANCE AMPERES RBV15005 --- RBV1510 NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, FIG.2 -- FORWARD DERATING CURVE FIG.1 -- PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, INST ANT ANEOUS FORWARD VOLT AGE, VOLT S REVERSE VOLT AGE,VOLT S www.diode.kr Diode Semiconductor Korea