RBSS84

RBSS84 RECTRON | Alldatasheet

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Technical content

FEATURES

• Halogen Free.
• Energy efficient MAXIMUM RATINGS(Ta = 25ºC) – Continuous TA = 25°C – Pulsed (tp≤10μs) Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25ºC Derate above 25º C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Maximum Lead Temperature for Soldering Purposes, for 10 seconds 1.8 225 mW mW/º C PD Unit Drain–Source Voltage VDSS Drain Current V V mAID -130 IDM -520 Parameter Symbol Limits Gate–to–Source Voltage – Continuous VGS ± 20 -50 º C/W ºC−55∼+150TJ,Tstg RΘJA 556 TL 260 ºC SOT23(TO-236) P-Channel Power MOSFET Package Marking and Ordering Information Device Marking Device Device Package RBSS84PD RBSS84 REV:O 23-05/74 SOT23

ELECTRICAL CHARACTERISTICS (Ta= 25 ºC) OFF CHARACTERISTICS Characteristic Drain–Source Breakdown Voltage (VGS = 0, ID = -250μA) Zero Gate Voltage Drain Current (VGS = 0, VDS = -25 V) (VGS = 0, VDS = -50 V) (VGS = 0, VDS = -50 V,TJ=125° C) Gate–Body Leakage Current, Forward (VGS = 20V) Gate–Body Leakage Current, Reverse (VGS = - 20V) ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = -250μA) Static Drain–Source On–State Resistance Transfer Admittance (VDS = -25 V, ID = -100 mA, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = - 15V,VGS=0V,f=1MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage Note ≤300 μs, Duty Cycle ≤2.0%. (VDS = –15 V,VGS=-10V ,RL = 50Ω,RG=25Ω) VSD - -1.0 - V -0.52 IS A- - -0.13 ISM A- - ns - 17.9 - - 5.3 - - 16.7 - - 8.6 - td(on) tr td(off) tf VGS(th) IDSS |yfs| -0.8 VBRDSS - - IGSSF - - 10 μA μA μA Ω - - Unit V -50 - - Symbol Min. -0.1 V -60 Typ. Max. IGSSR - - -10 -15 mS 50 - - pF pF Ciss - 38 - Coss Crss - 4.8 - - 2.7 - pF (VDS = - 15V,VGS=0V,f=1MHz) (VDS = - 15V,VGS=0V,f=1MHz) (VGS = -5.0 V, ID = -100 mA) RDS(on) - 2 6 2.Pulse Test: Pulse Width

0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 1.5 2 2.5 3 ID,Drain Current(A) VGS, Gate-to-Source Voltage(V) VDS=10V 150℃ 25℃ -55℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 ID,Drain Current(A) VDS,Drain-to-source Voltage(V) VGS=-3V VGS=-2.25V VGS=-2.5V VGS=-2.75V VGS=-3.25V VGS=-3.5V 0.5 1.5 2.5 3.5 RDS(on), Drain-to-source Resistance(Ω） ID, Drain Current(A) VGS=-5V 150℃ 25℃ -55℃ 0.5 1.5 2.5 3.5 RDS(on), Drain-to-source Resistance(Ω） ID, Drain Current(A) VGS=-10V 150℃ 25℃ -55℃ On-Region Characteristics Transfer Characteristics RDS(on) vs. ID RDS(on) vs. ID RATIN G AND CHARACTERISTI CS CURVES (RBSS84)

0.4 0.8 1.2 1.6 -55 -5 45 95 145 RDS(on), Drain-to-Source Resistance(Ω） Temperature(℃） ID=-0.13A,VGS=-5V ID=-0.52A,VGS=-10V 0.001 0.01 0.1 0 0.5 1 1.5 IS, Drain Current(A) VSD,Diode Forward Voltage(V) 150℃ 25℃ -55℃ IS vs. VSD RDS(on) vs. Temperature 0 5 10 15 20 25 30 35 40 45 50 Capacitance(pF) VDS(V) f=1.0MHz Ta=25℃ Ciss Coss Crss Capacitor vs. VDS RATIN G AND CHARACTERISTI CS CURVES (RBSS84)

e L 10° 0.012 0.35 0.54 0.005 0.007 0.69 0.014 0.021 0.029 1.20 0.09 b 0.37 E MIN NOM MAX MIN NOM D DIM MILLIMETERS INCHES 0.89 1 c 2.80 MAX A 1.11 0.035 0.04 0.044 0.004 0.13 0.18 0.003

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