RBO08-40G

RBO08-40G STMICROELECTRONICS | Alldatasheet

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RBO08-40G/M/T PowerSO-10 TM RBO08-40M 8A DIODE TO GUARD AGAINST BATTERY RE- VERSAL. NEGATIVE OVERVOLTAGEPROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b. SUITABLE FOR AUTOPROTECTED ALTER- NATOR ENVIRONMENT. BREAKDOWN VOLTAGE : 24 V min. CLAMPING VOLTAGE : ± 40 V max. MONOLITHIC STRUCTURE FOR GREATER RELIABILITY.

FEATURES

Designed to protect against battery reversal and overvoltagesin automotiveapplications, this monolithic component offers multiple functionsin the same package : D1 : reversed battery protection T1 : clamping against negative overvoltages T2 : Transil functionfor overvoltage protection.

DESCRIPTION

OVERVOLTAGEPROTECTIONCIRCUIT (RBO) Application Specific Discretes A.S.D.TM January 1998 - Ed : 2 D 2PAK RBO08-40G TO220AB RBO08-40T

Symbol Parameter Value Unit IFSM Non repetitive surge peak forward current (Diode D1) tp = 10 ms 80 A IF DC forward current (Diode D1) Tc = 75 °C8 A PPP Peak pulse power between Input and Output (Transil T1) see note 1 Tj initial = 25°C 10/1000µs 600 W PPP Peak pulse power between Pins 3 and 2 (10/1000µs) 1500 W Tstg Tj Storage temperature range Maximum junction temperature - 40 to + 150 150 TL Maximum lead temperature for soldering during 10 s at 4.5mm from case for TO220AB 260 °C Note 1 :for a surge greater than the maximum value, the device will fail in short-circuit.. TM : PowerSO-10,TRANSIL and ASD are trademarks of SGS-THOMSON Microelectronics. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Rth (j-c) Junction to case RBO08-40M RBO08-40G RBO08-40T 2.4 2.4 2.4 °C/W THERMAL RESISTANCE T1 2 VCL 31 V RM 31 VF13 V13 I13 IRM 31 IR 31 Ipp31 VBR 31 IF Ipp32 VRM 32 V B R 32 VC L32 V32 I32 IR 32 IRM 32 RBO08-40G / RBO08-40M / RBO08-40T

Symbol Test Conditions Value UnitMin. Typ. Max. VF1 3 IF =8A RBO08-40M/G 1.5 V RBO08-40T 1.7 V IF =8A@T amb =2 5°C 1.45 V VF1 3 IF =4A RBO08-40M/G 1.3 V RBO08-40T 1.35 V IF =4A@T amb =2 5°C 1.2 V VF1 3 IF = 1 A 1.1 V IF =1A@T amb =2 5°C 1.0 V IF = 1 A @ Tj = 85°C 0.9 V ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40°C<T amb <+8 5°C) Symbol Parameter VRM31 /VRM32 Stand-off voltage Transil T1 / Transil T2. VBR31 /VBR32 Breakdown voltage Transil T1 / Transil T2. IR31 /IR32 Leakage current Transil T1 / TransilT2. VCL31 /VCL32 Clamping voltage Transil T1 / Transil T2. VF13 Forward voltage drop Diode D1. IPP Peak pulse current. α T Temperature coefficient of VBR . C31/C32 CapacitanceTransil T1 / Transil T2. Symbol Test Conditions Value UnitMin. Typ. Max. VBR 31 IR = 1 mA 22 35 V VBR 31 IR = 1 mA, Tamb =2 5°C2 4 3 2 V IRM 31 VRM =2 0V 5 0 µA IRM 31 VRM =2 0V ,Tamb =2 5°C 10 µA VCL 31 IPP = 15A, Tjinitial = 25°C 10/1000µs4 0 V α T Temperature coefficient of VBR 91 0 -4/°C C 31 F = 1MHz V R = 0 V 1000 pF ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40°C<T amb <+8 5°C) Symbol Test Conditions Value UnitMin. Typ. Max. VBR 32 IR = 1 mA 22 35 V VBR 32 IR = 1 mA, Tamb =2 5°C2 4 3 2 V IRM 32 VRM =2 0V 5 0 µA IRM 32 VRM =2 0V ,Tamb =2 5°C1 0 µA VCL 32 IPP = 37.5 A 10/1000µs4 0 V α T Temperaturecoefficient of VBR 8.5 10 -4/°C C 32 F = 1MHz V R = 0 V 2000 pF ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40°C<T amb <+8 5°C) RBO08-40G / RBO08-40M / RBO08-40T

The RBO has 3 functionsintegratedon the same chip. D1 : “Diode function” in order to protect against reversed battery operation. T2 : “Transil function” in order to protect against positive surge generated by electric systems T1 : Protection againt negative surges such as inductive overvoltages (see motor application below). BASIC APPLICATION * The monolithic multi-function protection (RBO) has been developed to protect sensitive semiconductors in car electronic modules against both overvoltage and battery reverse. * In addition, the RBO circuit prevents overvoltages generated by the module from affecting the car supply network. MOTOR DRIVER APPLICATION BATTERY RBO DEVICE MOTOR CONTROL MOTOR Filter In this application, one half of the motor drive circuit is supplied through the “RBO” and is thus protected as per its basic function application. The secondpart is connected directly to the “car supply network” and is protectedas follows : - For positive surges : T2 (clamping phase) and D1 in forward-biased. - For negative surges : T1 (clamping phase) and T2 in forward-biased. RBO08-40G / RBO08-40M / RBO08-40T

• Input (1) : Pin 1 - Output (3) : Pin 3 - Gnd (2) : Connectedto base Tab Marking : Logo, date code, RBO08-40G PINOUT configuration in D 2PAK : TAB (TAB) - Input (1) : Pin 1 - Output (3) : Pin 3 - GND (2) : Connectedto base Tab Marking : Logo, date code, RBO08-40T PINOUT configuration in TO220AB : - Input (1) : Pin 3 - Output (3) : Pin 7 and 9 - Gnd (2) : Connectedto base Tab Marking : Logo, date code, RBO08-40M PINOUT configuration in PowerSO-10 : TOP VIEW Pin 1 (NC) Input (1) Gnd (2) Tab Output (3) Pin 2 (NC) Pin 3 (Input 1) Pin 4 (NC) Pin 5 (NC) Pin 10 (NC) Pin 9 (Ouput 3) Pin 8 (NC) Pin 7 (Ouput 3) Pin 6 (NC) RBO08-40G / RBO08-40M / RBO08-40T

1 2 5 10 20 50 1000.1 0.2 0.5 1.0 2.0 5.0 10.0 tp(ms) P p (kW) Transil T2 Diode D1 p Fig. 1 :Peak pulse power versus exponential pulse duration (Tj initial = 85°C). VCL (V) tp = 20 sµ tp = 1ms Ipp(A) Fig. 2-2 :Clamping voltage versus peak pulse current (Tj initial = 85°C). Exponential waveform tp = 1 ms and tp = 20µs (TRANSIL T1). VCL (V) tp = 40ms tp = 1ms 2.0 Ipp(A) Fig. 2-1 :Clamping voltage versus peak pulse current (Tj initial = 85°C). Exponential waveform tp = 40 ms and tp = 1 ms (TRANSIL T2). 0 25 50 75 100 125 150 1750.00 0.20 0.40 0.60 0.80 1.00 1.20 Tj initial (°C) Ppp[Tj]/Ppp[Tj initial=85°C] Fig. 3 :Relative variation of peak pulse power versus junction temperature. RBO08-40G / RBO08-40M / RBO08-40T

0.1 0.2 0.5 1.0 Zth(j-c)/Rth(j-c) tp (s) Fig. 4 :Relative variation of thermal impedance junction to case versus pulse duration. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V( V FM ) Tj=25°C Tj=150°C IFM (A) Fig. 5-1 :Peak forward voltage drop versus peak forward current (typical values) - (TRANSIL T2). V( VFM ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Tj=25°C Tj=150°C IFM (A) Fig. 5-2 :Peak forward voltage drop versus peak forward current (typical values) - (DIODE D1).

ORDERING INFORMATION

Reversed Battery & Overvoltage protection IF(AV) =8A Package : M = PowerSO-10 G=D 2PAK T = TO220AB VCL = 40V Fig. 6 :Relative variation of leakage current versus junction temperature. RBO08-40G / RBO08-40M / RBO08-40T

A D R 2.0 MIN. FLAT ZONE C G L B E REF. DIMENSIONS Millimeters Inches A 4.30 4.60 0.169 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 B2 1.40 0.055 C 0.45 0.60 0.017 0.024 C2 1.21 1.36 0.047 0.054 D 8.95 9.35 0.352 0.368 E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0 ° 8° 0° 8° FOOT-PRINT D 2PAK 8.90 3.70 1.30 5.08 16.90 10.30 RBO08-40G / RBO08-40M / RBO08-40T

The soldering process causes considerable thermal stress to a semiconductor component. This has to be minimized to assure a reliable and extended lifetime of the device. The PowerSO-10 package can be exposed to a maximum temperature of 260°C for 10 seconds. However a proper soldering of the package could be done at 215°C for 3 seconds. Any solder temperature profile should be within these limits. As reflow techniquesaremost common in surface mounting, typical heating profiles are given in Figure 1,either for mounting on FR4 or on metal-backed boards. For each particular board, the appropriate heat profile has to be adjusted experimentally. The present proposal is just a starting point. In any case, the following precautions have to be considered : - always preheat the device - peak temperatureshould be at least 30°C higher than the melting point of the solder alloy chosen - thermal capacity of the base substrate Voids pose a difficult reliability problem for large surface mount devices. Such voids under the package result in poor thermal contact and the high thermal resistance leads to component failures. The PowerSO-10 is designed from scratch to be solely a surface mount package, hence symmetry in the x- and y-axis gives the package excellent weight balance. Moreover, the PowerSO-10offers the uniquepossibility to control easily the flatness and quality of the soldering process. Both the top and the bottom soldered edges of the package are accessible for visual inspection (soldering meniscus). Coplanarity between the substrate and the package can be easily verified. The quality of the solder joints is very important for two reasons : (I) poor quality solder joints result directly in poor reliability and (II) solder thickness affects the thermal resistance significantly. Thus a tight control of this parameter results in thermally efficient and reliable solder joints. Fig. 1 :Typical reflow soldering heat profile Time (s) Temperature ( C) 0 40 80 120 160 200 240 280 320 360 100 150 200 250 o 215 Co Soldering Preheating Cooling 245 Co Epoxy FR4 board Metal-backed board RBO08-40G / RBO08-40M / RBO08-40T

SUBSTRATES AND MOUNTINGINFORMATION The use of epoxy FR4 boards is quite common for surface mounting techniques, however, their poor thermal conduction compromises the otherwise outstanding thermal performance of the PowerSO-10. Some methods to overcome this limitation are discussed below. One possibility to improve the thermal conduction is the use of large heat spreader areas at the copper layer of the PC board. This leads to a reduction of thermal resistance to 35°C for 6 cm of the board heatsink (see fig. 2). Use of copper-filledthrough holes on conventional FR4 techniques will increase the metallization and decrease thermal resistance accordingly. Using a configurationwith 16 holes under the spreaderof the package with a pitch of 1.8 mm and a diameter of 0.7 mm, the thermal resistance (junction - heatsink) can be reduced to 12°C/W (see fig. 3). Beside the thermal advantage, this solution allows multi-layer boards to be used. However, a drawback of this traditional material prevents its use in very high power, high current circuits. For instance, it is not advisable to surface mount devices with currents greater than 10 A on FR4 boards. A Power Mosfet or Schottky diode in a surface mount power package can handle up to around 50 A if better substrates are used. Fig. 2 :Mountingon epoxy FR4 head dissipation by extending the area of the copper layer Fig. 3 :Mounting on epoxy FR4 by using copper-filled through holes for heat transfer FR4 boardCopper foil FR4 boardCopper foil heat transferheatsink RBO08-40G / RBO08-40M / RBO08-40T

PowerSo-10package mounted on R th (j-a) P Diss 1.FR4 using the recommended pad-layout 50 °C/W 1.5 W 2.FR4 with heatsink on board (6cm2)3 5 °C/W 2.0 W 3.FR4 with copper-filled through holes and external heatsink applied 12°C/W 5.8 W 4. IMS floating in air (40 cm2)8 °C/W 8.8 W 5. IMS with external heatsink applied 3.5°C/W 20 W TABLE 1 A new technology available today is IMS - an Insulated Metallic Substrate. This offers greatly enhanced thermal characteristics for surface mount components. IMS is a substrate consisting of three different layers, (I) the base material which is available as an aluminium or a copper plate, (II) a thermal conductive dielectrical layer and (III) a copper foil, which can be etched as a circuit layer. Using this material a thermal resistance of 8°C/W with 40 cm 2 of board floating in air is achievable (see fig. 4). If even higher power is to be dissipated an external heatsink could be applied which leads to an R th(j-a) of 3.5°C/W (see Fig. 5), assuming that R th (heatsink-air) is equal to Rth (junction-heatsink). This is commonly applied in practice, leading to reasonable heatsink dimensions. Often power devices are defined by considering the maximum junction temperature of the device. In practice , however, this is far from being exploited. A summary of various power managementcapabilities is made in table 1 based on a reasonabledelta T of 70°C junction to air. The PowerSO-10 concept also represents an attractive alternative to C.O.B. techniques. PowerSO-10 offers devices fully tested at low and high temperature. Mounting is simple - only conventional SMT is required - enabling the users to getrid ofbond wire problems and the problem to control the high temperature soft soldering as well. An optimized thermal management is guaranteed through PowerSO-10 as the power chips must in any case be mounted on heat spreaders before being mounted onto the substrate. Fig. 4 :Mountingon metal backed board Fig. 5 :Mounting on metal backed board with an external heatsink applied FR4 boardCopper foil Aluminium heatsink Copper foil Insulation Aluminium RBO08-40G / RBO08-40M / RBO08-40T

H eB 0.25 M D h A F E3 E1 SEA TING PLANE SEA TING PLANE A B C Q DETA IL ”A” 0.10A B L a DETAIL ”A” REF. DIMENSIONS Millimeters Inches A 3.35 3.65 0.131 0.143 A1 0.00 0.10 0.00 0.0039 B 0.40 0.60 0.0157 0.0236 C 0.35 0.55 0.0137 0.0217 D 9.40 9.60 0.370 0.378 D1 7.40 7.60 0.291 0.299 E 9.30 9.50 0.366 0.374 E1 7.20 7.40 0.283 0.291 E2 7.20 7.60 0.283 0.299 REF. DIMENSIONS Millimeters Inches E3 6.10 6.35 0.240 0.250 E4 5.90 6.10 0.232 0.240 e 1.27 0.05 F 1.25 1.35 0. 0492 0.0531 H 13.80 14.40 0.543 0.567 h 0.50 0.019 L 1.20 1.80 0. 0472 0.0708 Q 1.70 0.067 a0 ° 8° 0° 8° RBO08-40G / RBO08-40M / RBO08-40T

DIMENSIONS (mm) TYP A B C Length tube 0,8 532 Quantity per tube 50 Dimensions in millimeters Dimensions in millimeters Surface mount film taping : contact sales office B C A RBO08-40G / RBO08-40M / RBO08-40T

REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 14.23 15.87 0.560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579 B 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038 b2 1.15 1.39 0.045 0.055 C 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106 e 2.29 2.79 0.090 0.110 F 5.85 6.85 0.230 0.270 I 3.55 4.00 0.140 0.157 L 2.54 3.00 0.100 0.118 l2 1.45 1.75 0.057 0.069 l3 0.80 1.20 0.031 0.047 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSONMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1997 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom -U.S.A. RBO08-40G / RBO08-40M / RBO08-40T