RBM05S MCC | Alldatasheet

Document overview

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Technical content

Features

  • Rating to 400v PRV
  • Ideal for printed curcuit board
  • Reliable low cost construction utilizing molded plastic technique results in inexpensive produst Maximum Ratings
  • Operating Temperature: -55°C to +150°C
  • Storage Temperature: -55°C to +150°C MCC Catalog Number Device Marking Maximum Rccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage RBM05S --- 50V 35V 50V RBM1S --- 100V 70V 100V RBM2S --- 200V 140V 200V RBM4S --- 400V 280V 400V MBS -1 www.mccsemi.com /G01/G02/G03/G04/G05/G06/G02/G07/G05/G06 INCHES MM /G01/G02/G03 /G03/G02/G05 /G03/G0B/G0C /G03/G02/G05 /G03/G0B/G0C /G05/G07/G0D/G04 /G0B .252 .272 6.40 6.91 /G15 /G0E/G13/G10/G11 /G0E/G0F/G13/G11 /G12/G0E/G14/G0F /G12/G0E/G16/G17 /G09 /G0F/G0E/G14/G11 /G0E/G0F/G11/G11 /G18/G0E/G16/G19 /G18/G0E94 /G01 /G0E/G0F/G19/G13 /G0E/G0F/G10/G13 /G14/G0E/G11/G17 /G14/G0E/G19/G18 /G04 .017 .029 0.45 0.75 /G1A .090 .106 2.30 2.70 /G1B .004 .008 0.10 0.20 /G0A .021 .023 0.53 0.58 /G1D .055 .065 1.40 1.65 /G1F /G0E/G0F/G13/G17 /G0E/G0F/G0F/G17 /G12/G0E/G17/G12 /G12/G0E/G10/G17 M .040 .050 1.02 1.27 /G01 .008 .014 0.15 0.35 MCC Notch in case B C D A F GH E ∼∼ ∼∼ ∼∼ ∼∼ L K J M N /G01/G02/G03/G04/G05/G06/G07/G05/G08/G08/G09/G04/G03/G02/G0A/G0B/G06/G07omponents

21201 Itasca Street Chatsworth

/G07/G18/G06/G19/G0F/G1A/G0F/G0F /G1B/G15/G05/G1C/G09/G1D/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G1A /G24/G0A/G25/G1D/G06/G06/G06/G1E/G1F/G0F/G1F/G20/G06/G21/G10/G0F/G22/G23/G19/G1A/G19

  • Fast recovery , low loss switching
  • Thermal Resistance Junction to Ambient : 75 °C/W Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV) 0.5A TA = 40°C Peak Forward Surge Current I FSM 30A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.15V IFM = 0.5A; TA = 25°C Maximum DC Reverse Current At Rated DC Blocking Voltage I R 5 µA 0.1mA TA = 25°C TA = 125°C Typical Junction Capacitance C J 13pF Measured at 1.0MHz, V R=4.0V Reverse Recovery Time Trr 150ns Version: 3 2003/02/10

www.mccsemi.com MCC 1 10 100 5.0 0 20 40 60 80 100 0.01 0.1 100 0.01 0.1 0.1 1 10 100 5.0 200 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Number of Cycles Fig. 1 – Maximum Forward Current Derating Curve Average Forward Rectified Current (A) Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Leakage Characteristics Per Leg Instantaneous Reverse Leakage Current (µA) Percent of Rated Peak Reverse Voltage (%) Resistive or Inductive Load Aluminum Substrate Glass Epoxy P.C.B. TA = 40°C Single Half Sine-Wave (JEDEC Method) Pulse Width = 300 s 1% Duty Cycle Instantaneous Forward Current (A) TJ = 125°C TJ = 25°C Reverse Voltage (V) Junction Capacitance (pF) Fig. 5 – Typical Junction Capacitance

1.0 Cycle

f = 60Hz f = 50Hz TJ = 150°C TJ = 25°C TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p Version: 3 2003/02/10