RBA80N04DANS-4UA04 RENESAS | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Standard level gate drive voltage: VGS(th) = 2.0~4.0V
  • Low on-state resistance to minimize conduction losses: RDS(on) = 3.5mΩ Max.
  • Low input capacitance to minimize driver losses
  • Small footprint (5x6mm2) with compact design
  • AEC-Q101 qualified
  • PPAP capable
  • Pb-free lead plating: RoHS compliant
  • MSL1 classified according to IPC/JEDEC J-STD-020 Application
  • Automotive: 12V/24V load EPS, ABS, BMS, e-fuse, etc. Outline Absolute Maximum Ratings (Tj=25°C unless otherwise notice.) Item Symbol Ratings Unit Drain to Source Voltage VDSS 40 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) Notes1,2,5 ±80 A Drain Current (pulse) ID(pulse) Notes1,3,5 ±240 A Power Dissipation PD Notes1,5 71 W Junction Temperature Tj 175 °C Storage Temperature Tstg -55 to 175 °C Single Avalanche Current IAS Notes4 27 A Single Avalanche Energy EAS Notes4 73 mJ

R07DS1579EJ0131 Rev.1.31 Page 2 of 9 Jun.27.2025 Thermal Resistance Item Symbol Max. Unit Junction to Case Thermal Resistance Rth(j-c) Notes5 2.1 °C/W

Electrical Characteristics

(Tj=25°C unless otherwise notice.) Item Symbol Min Typ Max Unit Test Conditions Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 40 V, VGS = 0 V Gate Leakage Current IGSS — — ±100 nA VGS = ± 20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) 2.0 — 4.0 V VDS = VGS, ID = 250 µA Drain to Source On-state Resistance RDS(on) — 2.86 3.5 mΩ VGS = 10 V, ID = 40 A Input Capacitance Ciss — 2100 — pF VDS = 25 V VGS = 0 V f = 1 MHz Output Capacitance Coss — 250 — pF Reverse Transfer Capacitance Crss — 160 — pF Gate resistance Rg — 1.8 — Ω Turn-on Delay Time td(on) — 27 — ns VDD = 20 V, ID = 40 A VGS = 10 V RG = 5 Ω Rise Time tr — 45 — ns Turn-off Delay Time td(off) — 55 — ns Fall Time tf — 12 — ns Total Gate Charge Qg — 40 — nC VDD = 20 V VGS = 10 V ID = 40 A Gate to Source Charge Qgs — 11 — nC Gate to Drain Charge Qgd — 10 — nC Body Diode Forward Voltage VF(S-D) — 0.83 1.5 V IF = 40 A, VGS = 0 V Reverse Recovery Time trr — 37 — ns IF = 40 A, VGS = 0 V di/dt = 100 A/µs Reverse Recovery Charge Qrr — 35 — nC Notes 1. Tc = 25°C 2. Value is limited by overall system design including PCB. 3. PW ≤ 10 µs , Duty Cycle ≤ 1% 4. L = 100µH , VDD = 20V , VGS = 20  0V , RG = 25 Ω 5. Defined by design. Not subject to production test.

R07DS1579EJ0131 Rev.1.31 Page 3 of 9 Jun.27.2025 Typical Characteristics 100 0 25 50 75 100 125 150 175 PD - Power Dissipation - W Tc - Case Temperature - ℃ POWER DISSIPATION vs. CASE TEMPERATURE 100 120 25 50 75 100 125 150 175 ID - Drain Current - A Tc - Case Temperature - ℃ DRAIN CURRENT vs. CASE TEMPERATURE 0.01 0.1 100 1000 0.1 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V FORWARD BIAS SAFE OPERATING AREA RDS(on) limit 1μs 10μs 100μs 1ms 10ms DC TC = 25℃ Single Pulse Notes5 0.01 0.1 PW - Pulse Width - s TRANSIENT THERMAL IMPEDANCE vs. PULSE WIDTH D=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse Zth(j-c) - Transient Thermal Impedance - ℃/W D=PW/T 100 1 10 100 1000 IAS - Single Avalanche Current - A tAV - Time in Avalanche - μs TYPICAL AVALANCHE CHARACTERISTICS Tj=25℃ Tj=100℃ Tj=150℃ VDD = 20V VGS = 20 → 0V RG = 25Ω Notes5 100 200 300 400 500 600 700 25 75 125 175 EAS - Single Avalanche Energy - mJ Tj - Junction Temperature - ℃ TYPICAL AVALANCHE ENERGY IAS=13A IAS=26A IAS=51A VDD = 20V VGS = 20 → 0V RG = 25Ω Notes5

R07DS1579EJ0131 Rev.1.31 Page 4 of 9 Jun.27.2025 0 5 10 15 20 VGS-GATE to Source Voltage-V Tj = 25℃ ID = 40A DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - mΩ 1 10 100 I D - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ Tj = 25℃ VGS = 10V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 0 0.5 1 1.5 2 2.5 ID - Drain Current - A VDS - Drain to Source Voltage - V Tj = 25℃ VGS = 10V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.001 0.01 0.1 1 2 3 4 5 6 ID - Drain Current - A VGS - Gate to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS Tj=175℃ Tj=25℃ Tj=-40℃ VDS = 10V -50 0 50 100 150 200 T j - Junction Temperature - ℃ VDS = VGS ID = 250μA VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. JUNCTION TEMPERATURE -50 0 50 100 150 200 Tj - Junction Temperature - ℃ RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURERE VGS = 10V ID = 40A

R07DS1579EJ0131 Rev.1.31 Page 5 of 9 Jun.27.2025 100 1000 10000 0.1 1 10 100 Ciss, Coss, Crss - Capacitance - pF VDS - Drain to Source Voltage - V Ciss Coss Crss Tj = 25℃ VGS = 0V f = 1MHz CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 20 40 60 80 100 VGS - Gate to Source Voltage - V Qg - Gate Charge - nC DYNAMIC INPUT/OUTPUT CHARACTERISTICS Tj = 25℃ VDD = 20V ID = 40A 0.1 100 0.0 0.5 1.0 1.5 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V VGS=0V VGS=10V SOURCE TO DRAIN DIODE FORWARD VOLTAGE Tj = 25℃ -50 0 50 100 150 200 T j - Junction Temperature - ℃ V(BR)DSS - Drain to source breakdown voltage - V DRAIN TO SOURCE BREAKDOWN VOLTAGE vs. JUNCTION TEMPERATURE ID = 10mA VGS = 0V

R07DS1579EJ0131 Rev.1.31 Page 6 of 9 Jun.27.2025 Test Circuit Reverse Recovery IF trr di/dt Qrr Waveform Test Circuit L RG VDD VGS IF D.U.T. Gate Charge Waveform VGS Qgs Qgd Qg Test Circuit VDD D.U.T. IG VGS Switching Time Test Circuit RL RG VDD VGS D.U.T. Waveform VGS VDS 10% 90% 90% 10% 90% td(on) tr td(off) tf 10% Avalanche Test Circuit L RG VDD VGS D.U.T. EAS = ･ L ･ IAS V(BR)DSS V(BR)DSS - VDD Waveform VGS VDD ID IAS VDS V(BR)DSS tAV

R07DS1579EJ0131 Rev.1.31 Page 7 of 9 Jun.27.2025 Package Dimensions Mount pad

R07DS1579EJ0131 Rev.1.31 Page 8 of 9 Jun.27.2025

Ordering Information

Part No. Packing Quantity RBA80N04DANS-4UA04#HB0 Taping 5000pcs/reel Packing Specification Remark : Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect reliability ev en if it is within the absolute maximum ratings. Please consider derating condition for appropriate reliability in reference Renesas Semiconductor Reliability Handbook.

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