RBA160N10EANS-4UA03

RBA160N10EANS-4UA03 RENESAS | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 9

Technical content

Features

• Standard level gate drive voltage: VGS(th) = 2.0 to 4.0 V
• Super low on-state resistance: RDS(on) = 2.9 m Max.
• Low input capacitance
• Low thermal resistance
• 100% Avalanche tested
• AEC-Q101 qualified, PPAP capable
• Pb-free lead plating: RoHS compliant
• MSL1 classified according to IPC/JEDEC J-STD-020 Application DC/DC onboard charging, Zone ECUs, Motor control, Battery management system, Wireless charging modules, Camera/Sensor power supply, Thermal Module Driver, LED Lighting Outline Absolute Maximum Ratings (Tj = 25 °C unless otherwise notice.) Item Symbol Ratings Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID(DC) Tc=25℃ Note 2,6 ±160 A ID(DC) Tc=100℃Note 2,6 ±116 A Drain Current (pulse) ID(pulse) Note 1,3,6 ±480 A Power Dissipation PD Note 1,6 165 W Operating Junction Temperature Tj -55 to 175 °C Storage Temperature Tstg -55 to 175 °C Single Avalanche Current IAS Note 4 41 A Single Avalanche Energy EAS Note 4 168 mJ SO8-FL (5×6) Equivalent Circuit 5 to 8 Gate Source Drain 1 to 3 A1 60N10 A Marking Specification Mark part number Lot number Trace code

R07DS1625EJ0100 Rev.1.00 Page 2 of 9 Aug.19.2025 Thermal Resistance Item Symbol Max. Unit Junction to Case Thermal Resistance Rth(j-c) Note 6 0.9 °C/W Junction to Ambient Thermal Resistance Rth(j-a) Note 5,6 50 °C/W

Electrical Characteristics

(Tj = 25 °C unless otherwise notice.) Item Symbol Min Typ Max Unit Test Conditions Zero Gate Voltage Drain Current IDSS — — 10 A VDS = 100 V, VGS = 0 V Gate Leakage Current IGSS — — ±1 A VGS =  20 V, VDS = 0 V Gate to Source Threshold Voltage VGS(th) 2.0 — 4.0 V VDS = VGS, ID = 109 A Drain to Source On-state Resistance RDS(on) — 2.5 2.9 m VGS = 10 V, ID = 80 A Input Capacitance Ciss — 6500 — pF VDS = 50 V VGS = 0 V f = 100 kHz Output Capacitance Coss — 1500 — pF Reverse Transfer Capacitance Crss — 50 — pF Gate resistance Rg — 1.7 —  — Turn-on Delay Time td(on) — 42 — ns VDD = 50 V ID = 80 A VGS = 10 V RG = 5  Rise Time tr — 30 — ns Turn-off Delay Time td(off) — 66 — ns Fall Time tf — 33 — ns Total Gate Charge Qg — 91 — nC VDD = 50 V VGS = 10 V ID = 80 A Gate to Source Charge Qgs — 37 — nC Gate to Drain Charge Qgd — 20 — nC Gate plateau voltage Vplateau — 5.5 — V Output Charge Qoss — 130 — nC VDD = 50 V, VGS = 0 V Body Diode Forward Voltage VF(S-D) — 0.87 1.5 V IF = 80 A, VGS = 0 V Reverse Recovery Time trr — 81 — ns IF = 80 A, VGS = 0 V di/dt = 100 A/s Reverse Recovery Charge Qrr — 150 — nC Note 1. Tc = 25 °C 2. Value is limited by overall system design including PCB. 3. PW  100 s 4. L = 100 H, VDD = 50 V, RG = 25  5. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4. (2 oz Cu pad.) 6. Defined by design. Not subject to production test.

R07DS1625EJ0100 Rev.1.00 Page 3 of 9 Aug.19.2025 Typical Characteristics 120 160 200 0 25 50 75 100 125 150 175 PD - Power Dissipation - W Tc - Case Temperature - ℃ POWER DISSIPATION vs. CASE TEMPERATURE 120 160 200 25 50 75 100 125 150 175 ID - Drain Current - A Tc - Case Temperature - ℃ DRAIN CURRENT vs. CASE TEMPERATURE 0.001 0.01 0.1 PW - Pulse Width - s D = 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse Zth(j-c) - Transient Thermal Impedance - ℃/W D = PW/T TRANSIENT THERMAL IMPEDANCE vs. PULSE WIDTH 0.001 0.01 0.1 100 1000 0.1 1 10 100 1000 ID - Drain Current - A VDS - Drain to Source Voltage - V RDS(on) limit 1 μs 10 μs 100 μs 1 ms 10 ms DC TC = 25 ℃ Single Pulse FORWARD BIAS SAFE OPERATING AREA 100 1000 1 10 100 1000 IAS - Single Avalanche Current - A tAV - Time in Avalanche - μs VDD = 50 V RG = 25 Ω Tj = 25 ℃ Tj = 100 ℃ Tj = 150 ℃ TYPICAL AVALANCHE CHARACTERISTICS 200 400 600 800 1000 25 75 125 175 EAS - Single Avalanche Energy - mJ Tj - Junction Temperature - ℃ VDD = 50 V RG = 25 Ω TYPICAL AVALANCHE ENERGY IAS = 40 A IAS = 80 A IAS = 160 A

R07DS1625EJ0100 Rev.1.00 Page 4 of 9 Aug.19.2025 -75 -25 25 75 125 175 Tj - Junction Temperature - ℃ RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs JUNCTION TEMPERATURERE VGS = 10 V ID = 80 A 0.001 0.01 0.1 100 1 2 3 4 5 6 ID - Drain Current - A VGS - Gate to Source Voltage - V VDS = 5 V Tj = 175 ℃ Tj = 100 ℃ Tj = 25 ℃ Tj = -55 ℃ FORWARD TRANSFER CHARACTERISTICS 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-State Resistance - mΩ Tj = 25 ℃ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 6 V VGS = 7 V VGS = 8 V VGS = 9 V VGS = 10 V 120 160 200 0 0.5 1 1.5 2 2.5 ID - Drain Current - A VDS - Drain to Source Voltage - V Tj = 25 ℃ DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 10 V VGS = 9 V VGS = 8 V VGS = 7 V VGS = 6 V 0 5 10 15 20 VGS-GATE to Source Voltage-V Tj = 25 ℃ ID = 80 A DRAIN TO SOURCE ON-STATERESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - mΩ Tj = 175 ℃ Tj = 100 ℃ Tj = 25 ℃ -75 -25 25 75 125 175 Tj - Junction Temperature - ℃ VDS = VGS VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. JUNCTION TEMPERATURE ID = 10 mA ID = 109 μA

R07DS1625EJ0100 Rev.1.00 Page 5 of 9 Aug.19.2025 100 1000 10000 100000 0.1 1 10 100 Ciss, Coss, Crss - Capacitance - pF VDS - Drain to Source Voltage - V Tj = 25 ℃ VGS = 0 V f = 100 kHz CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss Coss Crss 0 50 100 150 200 VGS - Gate to Source Voltage - V Qg - Gate Charge - nC DYNAMIC INPUT/OUTPUT CHARACTERISTICS Tj = 25 ℃ VDD = 50 V ID = 80 A 0.01 0.1 100 1000 0.0 0.5 1.0 1.5 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V Tj = 175 ℃ Tj = 100 ℃ Tj = 25 ℃ Tj = -55 ℃ 100 110 120 130 -75 -25 25 75 125 175 Tj - Junction Temperature - ℃ V(BR)DSS - Drain to source breakdown voltage - V DRAIN TO SOURCE BREAKDOWN VOLTAGE vs. JUNCTION TEMPERATURE ID = 10 mA VGS = 0 V

R07DS1625EJ0100 Rev.1.00 Page 6 of 9 Aug.19.2025 Test Circuit Switching Time Reverse Recovery IF trr di/dt Qrr Waveform Test Circuit L RG VDD VGS IF D.U.T. Test Circuit RL RG VDD VGS D.U.T. Waveform VGS VDS 10 % 90 % 90 % 10 % 90 % td(on) tr td(off) tf 10 % Gate Charge Test Circuit VDD VGS D.U.T. IG Waveform VGS Qgs Qgd Qg Vplateau Avalanche Test Circuit L RG VDD VGS D.U.T. Waveform EAS = ･ L ･ IAS V(BR)DSS V(BR)DSS - VDD VDD ID IAS VDS V(BR)DSS VGS tAV

R07DS1625EJ0100 Rev.1.00 Page 7 of 9 Aug.19.2025 Package Dimensions Mount pad SYMBOL MIN NOM MAX A 0.90 1.00 1.10 A1 0.00 - 0.05 b 0.39 0.44 0.54 b1 4.11 4.21 4.31 b2 - 0.26 - c 0.15 0.25 0.35 D 4.75 4.90 5.05 E 5.60 5.75 5.90 e HD 4.95 5.15 5.35 HE 5.90 6.10 6.30 L1 0.45 0.65 0.85 L2 3.30 3.50 3.70 L3 3.10 3.30 3.50 LP 0.40 0.56 0.80 DIMENSION (mm) 1.27BSC LP HD DETAIL.A DETAIL.B Plating A DETAIL.A c C SEATING PLANE M 0.10 C A B DETAIL.B 0.10 C b (8×) Mass: 0.1 g A e HE D Pin. 1 E B 0.10 C A 0.10 C B 0.70 3.57 2.37 1.27 2.56 4.51 1.45 0.71 3.57 0.20 5.40 Unit: mm

R07DS1625EJ0100 Rev.1.00 Page 8 of 9 Aug.19.2025

Ordering Information

Part No. Packing Quantity RBA160N10EANS-4UA03#HB0 Taping 5000 pcs/reel Packing Specification Remark : Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Unit: mm Symbol Dimension W 12 P 8 P0 4 P2 2 A0 6.35 B0 5.35 K0 1.2 F 5.5 E 1.75 D0 1.5 D1 1.5 T 0.3 A 330 N 100 W1 13.5 W2 17.4 Reel Dimension Tape Dimension G A N Detail.G 13.2 2.2 21.0 R1.0 ΦD0 P ΦD1 F W E Feed direction Product Orientation 1 pin T

© 2025 Renesas Electronics Corporation. All rights reserved. Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operati on of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circ uits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third pa rties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims invo lving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronic s products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rig hts of Renesas Electronics or others. 4. You shall be responsible for determining what licenses are required from any third parties, and obtaining such licenses for t he lawful import, export, manufacture, sales, utilization, distribution or other disposal of any products incorporating Renesas Ele ctronics products, if required. 5. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by you or third parties arising from such alteration , modification, copying or reverse engineering. 6. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large -scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data s heet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or syst ems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft con trol systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Re nesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 7. No semiconductor product is absolutely secure. Notwithstanding any security measures or features that may be implemented in R enesas Electronics hardware or software products, Renesas Electronics shall have absolutely no liability arising out of any vulnera bility or security breach, including but not limited to any unauthorized access to or use of a Renesas Electronics product or a system that uses a Renesas Electronics product. RENESAS ELECTRONICS DOES NOT WARRANT OR GUARANTEE THAT RENESAS ELECTRONICS PR ODUCTS, OR ANY SYSTEMS CREATED USING RENESAS ELECTRONICS PRODUCTS WILL BE INVULNERABLE OR FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE, HACKING, DATA LOSS OR THEFT, OR OTHER SECURITY INTRUSION (“Vulnerability Issues”). RENESAS ELECTRONICS DISCLAIMS ANY AND ALL RESPONSIBILITY OR LIABILITY ARISING FROM OR RELATED TO ANY VULNERABILITY ISSUES. FURTHERMORE, TO THE EXTENT PERMITTED BY APPLICABLE LAW, RENESAS ELECTRONICS DISCLAIMS ANY AND ALL WARRANTIES, EXPRESS OR IMPLIED, WITH RESPECT TO THIS DOCUMENT AND ANY RELATED OR ACCOMPANYING SOFTWARE OR HARDWARE, INCLUDING BUT NOT LIMITED TO THE IMPLIED WARRANTIES OF MERCHANTABILITY, OR FITNESS FOR A PARTICULAR PURPOSE. 8. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application no tes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditi ons are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use cond itions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesa s Electronics products are not subject to radiation resistance design. You are r esponsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Elec tronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatmen t for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibi lity of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regu lations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in complia nce with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufa cture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicabl e export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 12. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, dis poses of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and c onditions set forth in this document. 13. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consen t of Renesas Electronics. 14. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this docum ent or Renesas Electronics products. (Note1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indire ctly controlled subsidiaries. (Note2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.5.0-1 October 2020) Corporate Headquarters Contact information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up -to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/. Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners.