RB715W SXSEMI | Alldatasheet
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Technical content
Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Peak reversevoltage VRM 40 V DCreversevoltage VR 40 V N on-repe titi ve P ea kF orwar d surgecurrent@t〓8.3ms IFSM 200 mA Averageforwardcurrent IO 30 mA Powerdissipation PD 150 mW Thermal Resistance from JunctiontoAmbient RθJA 667 ℃/W OperationJunction and StorageTemperature Range Tj ,Tstg -55~+150 ℃ ELECTRICALCHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltageleakagecurrent IR VR=10V 1 μA Forwardvoltage VF IF=1mA 0.37 V Capacitancebetweenterminals CT VR=1V,f=1MHz 2.0 pF FEATURES: ExtraSmall Power MoldType LowVF High Reliability SCHOTTKY BARRIER DIODE MARKING: 3D RB715W 1 www.sxsemi.com
2 www.sxsemi.com 0 25 50 75 100 125 150 100 150 200 0.01 0.1 100 01 0 2 0 3 0 4 0 100 1000 0 5 10 15 20 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOT-523 PackageOutline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e 0.500 TYP. 0.020 TYP. e1 0.900 1.100 0.035 0.043 L 0.400 REF. 0.016 REF. L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-523Suggested Pad Layout SCHOTTKY BARRIER DIODE RB715W 3 www.sxsemi.com