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WEJ ELECTRONIC CO.,LTD R B 7 1 5 W SCHOTTKY BARRIER DIODE FEATURES: Power dissipation P D: 2 0 0 m W ( T a mb = 2 5 ℃ ) Collector current I F: 3 0 mA Collector-base voltage V R: 4 0 V Operating and storage junction temperature range TJ, Tstg: -55 ℃ to +150 ℃ CIRCUIT: MARKING: 3D ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N M A X U N I T Reverse breakdown voltage V(BR) IR= 100µA 40 V Reverse voltage leakage current IR V R=10V 1 µA Forward voltage VF IF=1mA 0.37 V Diode capacitance CD V R=1V, f=1MHz 2 pF RB715W Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. 0.20 SOT-523 1.60 1.00 0.30 1.60 0.50 0.81 RoHS