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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB557W Applications Dimensions (Unit : mm) Land size figure (Unit : mm) General rectification Features 1)Ultra small mold type. (EMD3) 2)Low VF 3)High reliability Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit V R V Io mA IFSM mA Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit VF1 - - 0.35 V IF=10mA VF2 - - 0.49 V IF=100mA IR -- 1 0 μA VR=10VReverse current Conditions (*1) Rating of per diode Parameter Forward voltage Junction temperature 125 Storage temperature 40 to 125 Average rectified forward current (*1) 100 Forward current surge peak (60Hz・1cyc) (*1) 500 Parameter Limits Reverse voltage (DC) 30 EMD3 0.7 0.50.5 0.7 0.7 0.6 0.6 1.3 ROHM : EMD3 JEITA : SC-75A JEDEC : SOT-416 dot (year week factory (3) 1.6±0.2 1.6±0.2 1.0±0.1 0.8±0.1 0.5 0.5 (2) (1) 0.15±0.05 0.7±0.1 0.55±0.1 0.1Min 0～0.1 0.2±0.1 -0.05 0.3±0.1 0.05 3.5±0.05 1.75±0.1 8.0±0.2 φ0.5±0.1 1.8±0.2 0.3±0.1 1.8±0.1 5.5±0.2 0.9±0.2 0～0.1 φ1.5 0.1 1/3 2011.04 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB557W FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 0.01 0.1 100 1000 10000 0 1 02 03 0 Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ 100 0 5 10 15 20 f=1MHｚ Ta=25℃ VR=10V n=30pcs AVE:2.017uA AVE:17.34pF Ta=25℃ f=1MHz VR=0V n=10pcs 0.1 1 10 100 t Ifsm AVE:3.90A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 0.02 0.04 0.06 0.08 0.1 00 . 1 0 . 2 Per diode 0.02 0.04 0.06 0.08 0.1 01 0 2 0 3 0 Per diode 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 250 260 270 280 290 300 Ta=25℃ IF=10mA n=30pcs AVE:270.2mV DC D=1/2 Sin(θ＝180) Sin(θ＝180) DC D=1/2 Mounted on epoxy board 2/3 2011.04 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB557W AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.1 0.2 0.3 0 25 50 75 100 125 Per diode 0.1 0.2 0.3 0 25 50 75 100 125 Per diode Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=15V T Tj=125℃ D=t/Tt VR Io VR=15V Sin(θ＝180) DC D=1/2 3/3 2011.04 - Rev.A

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes