RB557W

RB557W DIODES | Alldatasheet

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zA p p l i c a t i o n s zDimensions ( U n i t : m m ) zLand size figure (Unit : mm) General rectification zFeatures Ultra small mold type. (EMD3) 2) Low VF 3) High reliability zC o n s t r u c t i o n Silicon epitaxial planar zStructure zTaping dimensions (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Symbol Unit VR V Io mA IFSM mA Tj ℃ Tstg ℃ Forward current surge peak （60Hz・1cyc）（*1） 500 125 -40 to +125 Junction temperature Storage temperature (*1) Rating of per diode Limits 100 Parameter Reverse voltage (DC) Average rectified forward current（*1） zElectrical characteristic (Ta=25°C) Symbol Min. Typ. Max. Unit VF1 - - 0.35 V IF=10mA VF2 - - 0.49 V IF=100mA IR -- 1 0 µ A VR=10V Conditions Forward voltage Reverse current Parameter ROHM : EMD3 JEITA : SC-75A JEDEC : SOT-416 dot (year week factory) (3) 1.6±0.2 1.6±0.2 1.0±0.1 0.8±0.1 0.5 0.5 (2) (1) 0.15±0.05 0.7±0.1 0.55±0.1 0.1Min 0～0.1 0.2±0.1 -0.05 0.3±0.1 0.05 EMD3 0.7 0.50.5 0.7 0.7 0.6 0.6 1.3 3.5±0.05 1.75±0.1 8.0±0.2 φ0.5±0.1 1.8±0.2 0.3±0.1 1.8±0.1 5.5±0.2 0.9±0.2 0～0.1

zElectrical characteristic curves FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 0.01 0.1 100 1000 10000 01 0 2 0 3 0 Ta=-25℃ Ta=125℃ Ta=25℃ Ta=75℃ 100 0 5 10 15 20 f=1MHｚ Ta=25℃ VR=10V n=30pcs AVE:2.017uA AVE:17.34pF Ta=25℃ f=1MHz VR=0V n=10pcs 0.1 1 10 100 t Ifsm AVE:3.90A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 0.02 0.04 0.06 0.08 0.1 00 . 1 0 . 2 Per diode 0.02 0.04 0.06 0.08 0.1 01 0 2 0 3 0 Per diode 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ 250 260 270 280 290 300 Ta=25℃ IF=10mA n=30pcs AVE:270.2mV DC D=1/2 Sin(θ＝180) Sin(θ＝180) DC D=1/2 Mounted on epoxy board

AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 0.1 0.2 0.3 0 25 50 75 100 125 Per diode 0.1 0.2 0.3 0 25 50 75 100 125 Per diode Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=15V T Tj=125℃ D=t/Tt VR Io VR=15V Sin(θ＝180) DC D=1/2

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.