RB551VM-30 ROHM | Alldatasheet
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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB551VM-30 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) High speed switching lFeatures 1)Small mold type. (UMD2) 2)Low VF 3)High reliability lConstruction Silicon epitaxial lStructure lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Symbol Unit VRM V VR V Io mA IFSM A Tj °C Tstg °C lElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.36 V IF=100mA VF2 - - 0.47 V IF=500mA IR - - 100 μA VR=20V Storage temperature -40 to +125 Parameter Forward voltage Reverse current Average rectified forward current 500 Forward current surge peak (60Hz・1cyc) 2 Junction temperature 125 Parameter Limits Reverse voltage (repetitive) 30 Reverse voltage (DC) 20 ROHM : UMD2 JEITA : SC-901A JEDEC : SOD-323 dot (year week factory) 0.3±0.05 0.7±0.2 0.1 0.1±0.1 0.05 1.7±0.1 2.5±0.2 1.25±0.1 UMD2 2.1 0.8MIN. 0.9MIN. 2.75 3.5±0.05 1.75±0.1 8.0±0.2 0.3±0.1 1.0±0.1 2.8±0.1 1/3 2011.06 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB551VM-30 0.1 0.2 0.3 0 5 10 15 20 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 0.1 1 10 100 t Ifsm AVE:3.62A AVE:59.5pF Ta=25℃ f=1MHz VR=0V n=10pcs 400 410 420 430 440 450 100 0 10 20 30 0.1 100 1000 10000 100000 0 10 20 30 Ta=125℃ Ta=-25℃ Ta=25℃ Ta=75℃ 0.1 100 1000 0 100 200 300 400 500 100 120 140 160 180 200 Ta=25℃ VR=20V n=30pcs AVE:42.7uA 1 10 100 8.3ms Ifsm 1cyc 8.3ms FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS f=1MHz AVE:420.4mV Ta=25℃ IF=500mA n=30pcs Ta=-25℃ Ta=125℃ Ta=75℃ Ta=25℃ DC D=1/2 Sin(θ＝180) DC D=1/2 Sin(θ＝180) Mounted on epoxy board 8.3ms Ifsm 1cyc 2/3 2011.06 - Rev.A
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB551VM-30 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 DC Sin(θ＝180) D=1/2 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/T t VR Io VR=10V T Tj=125℃ D=t/T t VR Io VR=10V 3/3 2011.06 - Rev.A
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes