RB551V-30 SSC | Alldatasheet
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Technical content
SOD-323 Plastic-Encapsulate Diode PRODUCT SUMMARY RB551V-30 Schottky Diodes
FEATURES
High current rectifier Schottky diode Low voltage, low inductance For power supply 02/09/2007 Rev.1.00 www.SiliconStandard.com 1 MARKING: D Pb-free; RoHS-compliant SOD-323 Peak reverse voltage VRM 30 V DC reverse voltage VR 20 V Mean rectifying current IO 0.5 A Peak forward surge current IFSM 2 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40~+ 125 ℃ Forward voltage VF 0.36
0.47 V IF=100mA
IF=500mA Reverse current IR 100 µA V R=20V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode @ TA = 25oC Parameter Parameter Symbol Symbol Min. Typ. Max. Unit Limits Conditions Unit ELECTRICAL RATINGS @ TA = 25oC
02/09/2007 Rev.1.00 www.SiliconStandard.com 2 SOD-323 Plastic-Encapsulate Diode Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. TYPICAL CHARACTERISTICS Electrical Characteristic curves (Ta = 25oC) RB551V-30