RB551V-30 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
H igh Diode Semiconductor SOD3 23
Applications
D Low current rectifier schottky diode Low voltage, low inductance For power supply Parameter S ymbol Limit Unit Peak reverse voltage V RM 30 V DC reverse voltage V R 30 V Mean rectifying current I O 0.5 A Non-repetitive Peak Forward Surge Current@t=8.3ms I FSM 2 A Junction temperature T j 1 25 Storage temperature T stg - 55~+150 Parameter Symbol Min Typ Max Unit Conditions Forward voltage V F 0.36
0.47 V I
F =100mA I F =500mA Reverse current I R 100 μA V R =20V Power dissipation Pd 200 mW Thermal resistance junction to ambient R θJA 500 ℃/W Electrical Characteristics (Ta=25℃ Unless otherwise specified）
- Rectifier
H igh Diode Semiconductor Typical Characteristics 0 5 10 15 20 100 1000 0.1 100 0 5 10 15 20 25 30 0.1 100 1000 0 25 50 75 100 125 100 150 200 250 Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Forward Characteristics Ta=100 o C Ta=25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 500 Reverse Characteristics Ta=100 o C Ta=25 o C REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) AMBIENT TEMPERATURE T a ( ) POWER DISSIPATION P D (mW) Power Derating Curve
H igh Diode Semiconductor Package Outline Dimensions SOD323 Suggested Pad Layout SOD323
Reel Taping Specifications For Surface Mount Devices-SOD323 H igh Diode Semiconductor 1.25 1.46 2.9