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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB551SS-30 lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) General Rectification lFeatures 1)Small mold type (KMD2) 2)High reliability 3)Low VF lStructure lConstruction Silicon epitaxial planer lAbsolute maximum ratings (Ta=25C) Symbol VRM VR Average rectified forward current Io IFSM Tj Tstg lElectrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.36 V VF2 - - 0.47 V IR - - 100 μA Reverse voltage (repetitive peak) 30 V lTaping dimensions (Unit : mm) Parameter Limits Unit Junction temperature 125 C Reverse voltage (DC) 20 V 0.5 A Forward current surge peak(60Hz･1cyc.) 5 A Storage temperature -40 to +125 C Parameter Forward voltage IF=100mA IF=500mA Reverse current VR=20V KMD2 0.8 1.2 0.5 1.2±0.05 1.6±0.05 0.4±0.05 0～0.03 ROHM : KMD2 JEITA : - JEDEC :- dot (year week factory) 1/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB551SS-30 0.01 0.1 0 100 200 300 400 500 600 700 Tj=125°C Tj=25°C Tj=75°C FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(A) 100 1000 10000 100000 0 5 10 15 20 25 30 Tj=125°C Tj=25°C Tj=75°C REVERSE CURRENT:IR(mA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 0 5 10 15 20 25 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS f=1MHz 240 260 280 300 320 340 VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) AVE:397.5mV IF=500mA Tj=25°C 100 1000 VR=20V Tj=25°C AVE:45.7mA REVERSE CURRENT:IR(mA) IR DISPERSION MAP 100 f=1MHz VR=0V Tj=25°C AVE:71.4pF CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP 2/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB551SS-30 AVE:13.6A IFSM DISPERSION MAP ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms IFSM 1cyc. IF=0.1A IR=0.1A Irr=0.10×IR Tj=25°C AVE:6.7ns trr DISPERSION MAP REVERSE RECOVERY TIME:trr(ns) 100 1 10 100 8.3ms IFSM 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 10 100 time IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) On glass-epoxy substrate soldering land 50mm□ TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.1 0.2 0.3 0.4 0 0.2 0.4 0.6 0.8 1 D.C. D=1/2 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 3/4 2011.10 - Rev.A

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB551SS-30 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 D.C. D=1/2 Sin(θ＝180) AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) T Tj=125°C D=t/T t VR Io VR=10V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 25 50 75 100 125 D.C. D=1/2 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) T Tj=125°C D=t/T t VR Io VR=10V C=200pF R=0Ω AVE：18.5kV C=100pF R=1.5kΩ AVE：1.84kV ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP 4/4 2011.10 - Rev.A

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes