RB550V-30 GWSEMI | Alldatasheet
Document overview
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Technical content
Plastic-Encapsulate Diodes Schottky Barrier Diode
FEATURES
z Small Surface Mounting Type z Low V F and I R z High Reliability
APPLICATIONS
MARKING: SS MAXIMUM RATINGS (T a =25 unless otherwise noted ) Symbol Para meter Value Unit V RM Non-Repetitive Peak Reverse Voltage 30 V I O Continuous Forward Current 1 A I FSM Non-repetitive Peak Forward Surge Current@t=8.3ms 3 A P D Power Dissipation 200 mW R θJA Thermal Resistance From Junction To Ambient 500 ℃/W T j Junction Temperature 125 ℃ T stg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS(T a =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Reverse voltage V (BR) I R =1mA 30 V Reverse current I R V R =10V 0.03 mA I F =700mA 0.49 Forward voltage V F I F =1A 0.52 V SOD-323 The marking bar indicates the cathode 550V-30 RB
0.1 100 1000 5 1 01 52 02 53 0 0.1 100 1000 10000 0 25 50 75 100 125 100 150 200 250 02 46 8 1 0 100 150 200 0.1 Forward Characteristics FORWARD VOLTAGE V F (mV) FORWARD CURRENT I F (mA) T a =25 T a =100 Reverse Characteristics T a =25 T a =100 REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Typical Characteristics 550V-30 RB
Plastic surface mounted package; 2 leads SOD-323 550V-30 RB