RB531S-30TE61 ROHM | Alldatasheet
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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB531S-30 Applications Dimensions(Unit : mm) Land size figure(Unit : mm) General rectification Features 1)Ultra small mold type.(EMD2) 2)Low VF 3)High reliability Construction Silicon epitaxial planer Structure Taping specifications(Unit : mm) Absolute maximum ratings(Ta=25C) Symbol Unit VR V Io mA IFSM mA Tj C Tstg C Electical voltage(Ta=25C) Symbol Min. Typ. Max. Unit Conditions Forward voltage VF - - 0.35 V IF=10mA IR -- 1 0 μA VR=10V Junction temperature 125 Storage temperature -40to+125 Parameter Reverse current Parameter Limits Reverse voltage(DC) 30 Average rectified forward current 100 Forward current surge peak(60Hz/1cyc) 500 ROHM : EMD2 JEITA : SC-79 JEDEC :SOD-523 dot (year week factory) 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 1.2±0.05 1.6±0.1N EMD2 0.8 1.7 0.6 0.95±0.06 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.76±0.05 1.26±0.05 φ0.5 0.6 2.0±0.05 1.3±0.06 2.45±0.1 空ポケット 0.2 φ1.55±0.05 2.40±0.05 1.25 0.06 1.25 0.06 Empty pocket 1/3 2011.03 - Rev.B
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB531S-30 Electrical characteristics curves 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 0.01 0.1 100 1000 10000 0 1 02 03 0 100 0 5 10 15 20 AVE : 17.34pF Ta=25C f=1MHz VR=0V n=10pcs 250 260 270 280 290 300 AVE : 270.2mV AVE : 3.90A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 0.02 0.04 0.06 0.08 0.1 01 0 2 0 3 0 0.02 0.04 0.06 0.08 0.1 0 0.1 0.210 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=10mA I F=100mA 300s time FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(A) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : Ct(pF)REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(A) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM -CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) TIME : t(ms) IFSM-t CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) FORWARD POWER DISSIPATION : Pf(W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION : PR (W) REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS f=1MHｚ Ta=25C VF=10mA n=30pcs Ta=25C VR=10V n=30pcs AVE : 2.037A Ta=-25C Ta=125C Ta=75C Ta=25C Ta=-25C Ta=125C Ta=25C Ta=75C DC D=1/2 Sin(=180) Sin(=180) DC D=1/2Mounted on epoxy board 2/3 2011.03 - Rev.B
www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB531S-30 0.1 0.2 0.3 0 25 50 75 100 125 0.1 0.2 0.3 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) Sin(=180) DC D=1/2 T Tj=125C D=t/Tt VR Io VR=15V T Tj=125 C D=t/Tt VR Io VR=15V Sin(=180) DC D=1/2 3/3 2011.03 - Rev.B
R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes