RB530XN

RB530XN ROHM | Alldatasheet

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Rev.B 1/3 Schottky barrier diode RB530XN zApplications zExternal dimensions (Unit : mm) zLand size figure (Unit : mm) Low current rectification UMD6 0.35 0.9 1.6 0.650.65 Sym bol Min. Typ. Max. Uni t Condi tions VF1- - 0.40 V IF=10m A VF2- - 0.53 V IF=100m A Reverse current IR -- 1 µA VR=10V orward voltage Param eter F Sym bol Unit VR V Io m A IFSM A Tj ℃ Tstg ℃ Lim its 100 Param eter Reverse vltage verage rectified forward current（*1） orward current surge p eak （60H z・1cyc）（*1） 1 unc tion tem per ature torage tem per ature *1) Rating of per diode 125 -40 to +125 A F J S zFeatures 1) Small mold type. (UMD6) 2) Low IR 3) High reliability. zConstruction zStructure ROHM : UMD6 JEITA : SC-88 JEDEC : SOT-363 dot (year week factory) 2.0±0.2 2.1±0.1 1.25±0.1 0.25±0.1 0.05 各リードとも 同寸法 (5)(6) (4) 1.3±0.1 0.65 0.65 (1) (3)(2) 0.15±0.05 0.9±0.1 0.7 0.1Min 0～0.1 Each lead has same dimension Silicon epitaxial planar zTaping dimensions (Unit : mm) 2.2±0.1 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.2 φ1.1±0.1 2.45±0.1 2.4±0.1 5.5±0.2 1.15±0.1 2.4±0.1 0.3±0.1 0～0.5 zAbsolute maximum ratings (Ta=25°C) zElectrical characteristics (Ta=25°C, per chip)

Rev.B 2/3 100 200 300 400 500 600 700 800 900 1000 100 01 0 20 3 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP zElectrical characteristic curves (Ta=25°C) AVE:28.2pF Ta=25℃ f=1MHz VR=0V n=10pcs IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS AVE:5.60A 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 100 1000 10000 100000 1000000 01 0 20 30 f=1MHｚ 0.002 0.004 0.006 0.008 0.01 0 102 03 Per chip DC D=1/2 Sin(θ＝180) 100 1000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=10mA 300us time Mounted on epoxy board 400 410 420 430 440 450 AVE:430.7mV 0.1 0.2 0.3 Per chip Sin(θ＝180) D=1/2 DC Ta=125℃ Ta=75℃ Ta=-25℃ Ta=25℃ Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ Ta=25℃ IF=100mA n=10pcs Ta=25℃ VR=10V n=30pcs AVE:114nA 8.3ms Ifsm 1cyc

Rev.B 3/3 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 0.1 0.2 0.3 0 25 50 75 100 125 Per chip Sin(θ＝180) D=1/2 DC T Tj=125℃ D=t/Tt VR Io VR=15V 0.1 0.2 0.3 0 25 50 75 100 125 Per chip Sin(θ＝180) D=1/2 DC T Tj=125℃ D=t/Tt VR Io VR=15V

Appendix1-Rev1.1 The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.