RB530S-30TE61 ROHM | Alldatasheet

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier Diode RB530S-30 Applications Dimensions (Unit : mm) General rectification Features 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability Construction Structure Silicon epitaxial planer Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Symbol Unit VR V Io mA IFSM mA Tj C Tstg C Electical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Forward voltage VF - - 0.45 V IF=10mA IR - - 0.5 μA VR=10V Reverse voltage (DC) Junction temperature Forward current surge peak (60Hz/1cyc) 500 Average rectified forward current 100 Parameter Reverse current Land size figure (Unit : mm) Parameter Limits Conditions 125 Storage temperature -40 to +125 EMD2 0.8 1.7 0.6 0.95±0.06 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.76±0.05 1.26±0.05 φ0.5 0.6 2.0±0.05 1.3±0.06 2.45±0.1 空ポケット 0.2 φ1.55±0.05 2.40±0.05 1.250.06 1.25 0.06 Empty pocket 1/3 2011.03 - Rev.B

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB530S-30 Electical characteristics curves 0.005 0.01 0.015 0.02 0 5 10 15 20 25 30 0.02 0.04 0.06 0.08 0.1 0 0.05 0.1 0.15 0.2 100 1000 0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) AVE : 4.20A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 1 10 100 t Ifsm AVE : 16.28pF Ta=25C f=1MHz VR=0V n=10pcs 100 200 300 400 500 600 700 800 900 1000 AVE : 108.3nA 320 330 340 350 360 370 100 0 5 10 15 20 0.1 100 1000 10000 100000 1000000 01 0 2 0 3 0 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS : Ct(pF) REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE : VF(mV) REVERSE CURRENT : IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ct DISPERSION MAP IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT : IFSM(A) TIME : t(ms) IFSM-t CHARACTERISTICS TIME : t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) FORWARD POWER DISSIPATION : Pf(W) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION : PR (W) REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS f=1MHｚ Ta=25C VF=10mA n=30pcs Ta=25C VR=10V n=30pcs AVE : 347.5mV Ta=-25C Ta=125C Ta=75C Ta=25C Ta=-25C Ta=125 Ta=25C Ta=75C DC D=1/2 Sin(=180) Sin(=180) DC D=1/2 2/3 2011.03 - Rev.B

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB530S-30 0.1 0.2 0.3 0 25 50 75 100 125 0.1 0.2 0.3 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) T Tj=125C D=t/Tt VR Io VR=15V T Tj=125C D=t/Tt VR Io VR=15V Sin(=180) DC D=1/2 Sin(=180) DC D=1/2 3/3 2011.03 - Rev.B

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