RB520S-40 LEIDITECH | Alldatasheet

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Technical content

Features

Extremelysmall surface mounting type. (SOD523) Low I R z Construction Silicon epitaxial planar z Device Marking Shipping RB520S-40 D 3000/Tape&Reel We declare that the material of product compliance with RoHS requirements.

Ordering Information

F

0.55 V I

F =100mA Reverse current I R 10 µΑ V R =40V High reliability Reverse voltage(repetitive peak) V R 40 V RB520S-40 Dimensions SOD-523 Pin Configuration Rev : www.leiditech.com 01.06.2017 1/4

0.001 0.01 0.1 1 10 100 1000 Rth(j-a) Rth(j-c) 1ms IM=1mA IF=200mA 300us time Mounted on epoxy board 100 200 300 400 500 600 700 800 900 1000 100 0 1 02 03 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) 0.1 0.2 0.3 REVERSE CURRENT:IR(μA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP AVE:23.2pF Ta=25℃ f=1MHz VR=0V n=10pcs IFSM DISPERSION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS AVE:5.60A 8.3ms Ifsm 1cyc 1 10 100 8.3ms Ifsm 1cyc 8.3ms 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:P R (W) REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS f=1MHｚ Ta=25℃ VR=10V n=30pcs AVE:67.0nA 0.002 0.004 0.006 0.008 0.01 0 1 02 03 04 0 DC D=1/2 Sin(θ＝180) 0.1 1 10 100 t Ifsm Ta=125℃ Ta=-25℃ Ta=25℃ Ta=75℃ DC D=1/2 Sin(θ＝180) 460 470 480 490 500 510 AVE:491.2mV Ta=25℃ IF=100mA n=30pcs 0.0001 0.001 0.01 0.1 100 1000 0 1 02 03 04 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ zElectrical characteristic curves Rev : www.leiditech.com 01.06.2017 2/4 RB520S-40

AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc) 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 Sin(θ＝180) DC D=1/2 Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=20V T Tj=125℃ D=t/Tt VR Io VR=20V Rev : www.leiditech.com 01.06.2017 3/4 RB520S-40

NOTES: 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. BASE MATERIAL. TRUSIONS, OR GATE BURRS. DIM MIN NOM MAX MILLIMETERS D 1.10 1.20 1.30 E 0.70 0.80 0.90 A 0.50 0.60 0.70 b 0.25 0.30 0.35 c 0.07 0.14 0.20 L 0.30 REF H 1.50 1.60 1.70 E L2 0.15 0.20 0.25 E D −X− −Y− b M 0.08 X Y A H c E TOP VIEW SIDE VIEW SOLDERING FOOTPRINT* RECOMMENDED 0.48 0.40 1.80 PACKAGE OUTLINE Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2017 4/4 RB520S-40