RB520S-40 DGNJDZ | Alldatasheet

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Technical content

SOD-523 Plastic-Encapsulate Diodes RB520S-40 Schottky Barrier Diode

FEATURES

z Small surface mounting type z Low I R z High reliability MARKING: D1 Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol Limit Unit DC reverse voltage V R 40 V Mean rectifying current I 0.2 A Peak forward surge current I FSM 1 A Power Dissipation P D 150 mW Thermal resistance from junction to ambient R θJA 667 ℃/W Junction temperature T J 125 Storage temperature T STG - 55~+150 Electrical Ratings @T A =25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage V F 0.304 0.446 0.39

0.55 V I

F =10mA I F =100mA Reverse current I R 0.605 2.837 10 μA V R =10V V R =40V B,Jan,2012 SOD-523 DONGGUAN NANJING ELECTRONICS LTD.,

0.01 0.1 100 01 0 2 0 3 0 4 0 0.1 100 Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics Ta=100 o C Ta=25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Reverse Characteristics RB520S-40Typical Characteristics Ta=100 o C Ta=25 o C REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) B,Jan,2012