RB520S-40 GWSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
Plastic-Encap sulate Diodes Schottky Barrier Diode
FEATURES
z Small surface mounting type z Low I R z High reliability MARKING: D1 Maximum Ratings and Electrical Characteristics, Single Diode @T A =25℃ Parameter Symbol Limit Unit DC reverse voltage V R 40 V Mean rectifying current I O 0.2 A Non-repetitive peak forward surge current@t=8.3ms I FSM 1 A Power Dissipation P D 150 mW Thermal resistance from junction to ambient R θJA 667 ℃/W Junction temperature T J 125 Storage temperature T STG - 55~+150 Electrical Ratings @T A =25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage V F 0.304 0.446 0.39
0.55 V I
F =10mA I F =100mA Reverse current I R 0.605 2.837 10 μA V R =10V V R =40V SOD-523 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device. 520S-40 RB
0.01 0.1 100 01 0 2 0 3 0 4 0 0.1 100 Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics Ta=100 o C Ta=25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Reverse Characteristics Ta=100 o C Ta=25 o C REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) Typical Characteristics 520S-40 RB
Plastic surface mounted package; 2 leads SOD-523 E A b p C ALL ROUND D A UNIT A b p C D E H E V mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 O H E 520S-40 RB