RB520S-30TE61 ROHM | Alldatasheet

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www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Schottky barrier diode RB520S-30 Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Low current rectification Features 1) Ultra Small mold type. (EMD2) 2) Low IR. 3) High reliability. Construction Silicon epitaxial planar Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Symbol Unit VR V Io mA IFSM A Tj °C Tstg °C Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit VF - - 0.6 V IF=200mA IR -- 1 μA VR=10V Parameter Limits Reverse voltage (DC) 30 Average rectified forward current 200 Forward current surge peak (60Hz・1cyc) 1 Conditions Junction temperature 125 Storage temperature -40 to +125 Forward voltage Reverse current Parameter EMD2 0.8 1.7 0.6 0.12±0.05 0.6±0.1 0.3±0.05 0.8±0.05 1.2±0.05 1.6±0.1 ROHM : EMD2 JEITA : SC-79 JEDEC :SOD-523 dot (year week factory) 0.95±0.06 4.0±0.1 3.5±0.05 1.75±0.1 8.0±0.15 0.2±0.05 0.76±0.05 1.26±0.05 φ0.5 0.6 2.0±0.05 1.3±0.06 2.45±0.1 空ポケット 0.2 φ1.55±0.05 2.40±0.05 1.25 0.06 1.25 0.06 Empty pocket 1/3 2011.03 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB520S-30 100 1000 10000 0.001 0.1 10 1000 Rth(j-a) Rth(j-c) 100 200 300 400 500 600 700 800 900 1000 100 0 1 02 03 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD CURRENT:IF(mA) 0.1 0.2 0.3 REVERSE CURRENT:IR(nA) REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA) IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ct DISPERSION MAP AVE:28.2pF Ta=25℃ f=1MHz VR=0V n=10pcs IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) TIME:t(ms) IFSM-t CHARACTERISTICS AVE:5.60A 8.3ms Ifsm 1cyc 11 0 1 0 0 8.3ms Ifsm 1cyc 8.3ms 11 0 1 00 t Ifsm 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 TIME:t(s) Rth-t CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS REVERSE POWER DISSIPATION:PR (W) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 100 1000 10000 100000 1000000 0 1 02 03 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ f=1MHｚ 0.002 0.004 0.006 0.008 0.01 0 5 10 15 20 25 30 DC D=1/2 Sin(θ＝180) 480 490 500 510 520 530 AVE:507.6mV Ta=25℃ IF=200mA n=30pcs Ta=125℃ Ta=-25℃ Ta=25℃ Ta=75℃ Ta=25℃ VR=10V n=30pcs AVE:114nA DC D=1/2 Sin(θ＝180) 1ms IM=10mA IF=100mA 300us time Mounted on epoxy board 2/3 2011.03 - Rev.D

www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Data Sheet RB520S-30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) CASE TEMPARATURE:Tc(℃) Derating curve (Io-Tc) 0.1 0.2 0.3 0.4 0.5 02 5 5 0 7 5 1 0 0 1 2 5 Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=15V AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 Sin(θ＝180) DC D=1/2 T Tj=125℃ D=t/Tt VR Io VR=15V 3/3 2011.03 - Rev.D

R1120Awww.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Notice ROHM Customer Support System http://ww w.rohm.com/contact/ Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. Notes