RB520S-30 SSC | Alldatasheet
Document overview
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Technical content
08/03/2007 Rev.1.00 www.SiliconStandard.com 1 RB520S-30 PRODUCT SUMMARY SOD-523 Plastic-Encapsulate Diodes
FEATURES
Small surface mounting type Low IR. (IR = 0.1 uA) High reliability MARKING: B MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Single Diode ELECTRICAL RATINGS Pb-free; RoHS-compliant SOD-523 Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Peak forward surge current IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40-125 ℃ Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Reverse current IR 1 μA VR=10V @TA=25 oC @TA=25 oC
08/03/2007 Rev.1.00 www.SiliconStandard.com 2 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. TYPICAL CHARACTERISTICS