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Technical content
Schottky Barrier Diode RB520L-30 016 www.gmesemi.com R e v . A 1
FEATURES
Low I R=0.1μA. High reliability. Small surface mounting.
APPLICATIONS
L o w c u r r e n t r e c t i f i c a t i o n . DFN1006-2
ORDERING INFORMATION
T y p e N o . M a r k i n g P a c k a g e C o d e RB520L-30 B DFN1006-2 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA Peak forward surge current IFSM 1 A Total device dissipation PT 200 mW Junction temperature Tj +125 ℃ storage temperature Tstg -40 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F 0.6 V I F=200mA Reverse current I R 1 μA VR=10V Pb Lead-free
Schottky Barrier Diode RB520L-30 016 www.gmesemi.com R e v . A 2 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Schottky Barrier Diode RB520L-30 016 www.gmesemi.com R e v . A 3 PACKAGE OUTLINE Plastic surface mounted package DFN1006-2 SOLDERING FOOTPRINT U n i t : m m
PACKAGE INFORMATION
RB520L-30 DFN1006-2 10000/Tape&Reel DFN1006-2 Dim Min Typ Max A 0.95 1.00 1.075 B 0.47 0.50 0.53 C 0.55 0.60 0.675 D 0.45 0.50 0.55 E 0.20 0.25 0.30 F - 0.40 - H 0 0.03 0.05 All Dimensions in mm A B C H D E F 0.70 0.70 1.10 0.40 0.30